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| S505TX/S505TXR/S505TXRW Vishay Semiconductors MOSMIC(R) for TV-Tuner Prestage with 5 V Supply Voltage 2 1 Comments MOSMIC - MOS Monolithic Integrated Circuit SOT-143 Features * Easy Gate 1 switch-off with PNP switching transistors inside PLL e3 * High AGC-range with less steep slope * Integrated gate protection diodes * Low noise figure * High gain, high forward transadmittance (30 mS typ.) * Improved cross modulation at gain reduction * SMD package * Lead (Pb)-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 1 4 2 SOT-143R 4 1 3 2 SOT-343R 4 3 19216 Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and VHF- tuner with 5 V supply voltage. Mechanical Data Typ: S505TX Case: SOT-143 Plastic case Weight: approx. 8.0 mg Pinning: 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 Typ: S505TXR Case: SOT-143R Plastic case Weight: approx. 8.0 mg Pinning:1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 Typ: S505TXRW Case: SOT-343R Plastic case Weight: approx. 6.0 mg Pinning: 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 Typical Application C block AGC C block RF in RG1 G2 G1 S D RFC VDD(VDS) RF out C block VGG (VRG1) 13650 Parts Table Part S505TX S505TXR S505TXRW X05 X7R WX7 Marking SOT-143 SOT-143R SOT-343R Package Document Number 85080 Rev. 1.2, 29-Apr-05 www.vishay.com 1 S505TX/S505TXR/S505TXRW Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Gate 1 - source voltage Gate 2 - source voltage Total power dissipation Channel temperature Storage temperature range Tamb 60 C Test condition Symbol VDS ID IG1/G2SM + VG1S - VG1S VG2SM Ptot TCh Tstg Value 8 30 10 6 1.5 6 200 150 - 55 to + 150 Unit V mA mA V V V mW C C Maximum Thermal Resistance Parameter Channel ambient 1) 1) Test condition Symbol RthChA Value 450 Unit K/W on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 m Cu Electrical DC Characteristics Tamb = 25 C, unless otherwise specified Parameter Drain - source breakdown voltage Gate 1 - source breakdown voltage Gate 2 - source breakdown voltage Test condition ID = 10 A, VG1S = VG2S = 0 Symbol V(BR)DSS Min 12 7 7 10 10 20 20 8 0.5 0.8 1.0 14 20 1.3 1.4 Typ. Max Unit V V V nA nA mA V V IG1S = 10 mA, VG2S = VDS = 0 V(BR)G1SS IG2S = 10 mA, VG1S = VDS = 0 V(BR)G2SS + IG1SS IG2SS IDSO VG1S(OFF) VG2S(OFF) Gate 1 - source leakage current + VG1S = 5 V, VG2S = VDS = 0 Gate 2 - source leakage current VG2S = 5 V, VG1S = VDS = 0 Drain - source operating current VDS = VRG1 = 5 V, VG2S = 4 V, RG1 = 56 k Gate 1 - source cut-off voltage Gate 2 - source cut-off voltage VDS = 5 V, VG2S = 4, ID = 20 A VDS = VRG1 = 5 V, RG1 = 56 k, ID = 20 A Remark on improving intermodulation behavior: By setting RG1 smaller than 56 k, typical value of IDSO will raise and improved intermodulation behavior will be performed. Electrical AC Characteristics Tamb = 25 C, unless otherwise specified VDS = VRG1 = 5 V, VG2S = 4 V, RG1 = 56 k, ID = IDSO, f = 1 MHz Parameter Forward transadmittance Gate 1 input capacitance Feedback capacitance Output capacitance Test condition Symbol |y21s| Cissg1 Crss Coss Min 27 Typ. 30 1.8 20 1.0 Max 35 2.2 30 Unit mS pF fF pF www.vishay.com 2 Document Number 85080 Rev. 1.2, 29-Apr-05 S505TX/S505TXR/S505TXRW Vishay Semiconductors Parameter Power gain Test condition GS = 2 mS, GL = 0.5 mS, f = 200 MHz GS = 3,3 mS, GL = 1 mS, f = 800 MHz AGC range Noise figure VDS = 5 V, VG2S = 1 to 4 V, f = 800 MHz GS = 2 mS, GL = 0.5 mS, f = 200 MHz GS = 3.3 mS, GL = 1 mS, f = 800 MHz Cross modulation Input level for k = 1 % @ 0 dB AGC fw = 50 MHz, funw = 60 MHz Input level for k = 1 % @ 40 dB AGC fw = 50 MHz, funw = 60 MHz Symbol Gps Gps Gps F F Xmod 90 17 45 Min Typ. 28 22 50 1 1.3 Max Unit dB dB dB dB dB dBV Xmod 100 105 dBV Package Dimensions in mm 0.1 [0.004] max. 1.1 [0.043] 2.6 [0.102] 2.35 [0.093] 1.8 [0.071] 1.6 [0.063] 0.9 [0.035] 0.75 [0.030] 0.5 [0.020] 0.35 [0.014] foot print recommendation: 3 [0.118] 2.8 [0.110] 0.5 [0.020] 0.35 [0.014] 0.5 [0.020] 0.35 [0.014] 0.15 [0.006] 0.08 [0.003] 1.7 [0.067] 0.9 [0.035] 0.9 [0.035] 1.2 [0.047] 1.4 [0.055] 1.2 [0.047] 0.9 [0.035] 1.2 [0.047] 0.8 [0.031] 1.9 [0.075] 2 [0.079] 1.8 [0.071] 96 12239 0.8 [0.031] Document Number 85080 Rev. 1.2, 29-Apr-05 2 [0.079] www.vishay.com 3 S505TX/S505TXR/S505TXRW Vishay Semiconductors Package Dimensions in mm 0.1 [0.004] max. 1.1 [0.043] 3 [0.118] 2.8 [0.110] 0.5 [0.020] 0.35 [0.014] 0.5 [0.020] 0.35 [0.014] 1.8 [0.071] 1.6 [0.063] 0.15 [0.006] 0.08 [0.003] 2.6 [0.102] 2.35 [0.093] 0.5 [0.020] 0.35 [0.014] 0.9 [0.035] 0.75 [0.030] foot print recommendation: 1.7 [0.067] 0.9 [0.035] 0.9 [0.035] 0.9 [0.035] 0.8 [0.031] 1.2 [0.047] 1.4 [0.055] 1.2 [0.047] 2 [0.079] 1.8 [0.071] 0.8 [0.031] 1.9 [0.075] 0.8 [0.031] 96 12240 Package Dimensions in mm 0.1 [0.004] max. 0.2 [0.008] 0.1 [0.004] 2.2 [0.087] 1.8 [0.071] 0.4 [0.016] 0.25 [0.010] 0.4 [0.016] 0.25 [0.010] 0.15 [0.006] min. 2.2 [0.087] 2 [0.079] 1.25 [0.049] 1.05 [0.041] foot print recommendation: 0.7 [0.028] 0.55 [0.022] 0.4 [0.016] 0.25 [0.010] 0.9 [0.035] 1.15 [0.045] 0.06 [0.024] 1.35 [0.053] 1.15 [0.045] 1.6 [0.063] 1.4 [0.055] 1.2 [0.047] 96 12238 1.3 [0.051] www.vishay.com 4 0.8 [0.031] 1 [0.039] 0.8 [0.031] 2 [0.079] Document Number 85080 Rev. 1.2, 29-Apr-05 S505TX/S505TXR/S505TXRW Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 85080 Rev. 1.2, 29-Apr-05 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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