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 SUPERHIGH-POWERGaAlAsIREMITTERS
FEATURES * Ultra high power output * Four wire bonds on die corners * Very narrow optical beam * Standard 3-lead TO-39 hermetic package * Chip size .030 x .030 inches
OD-50L
ANODE (CASE) GLASS DOME .250 .262 .018
.357 .362 .100
.324 .332
.246 .254
.200 .031 .025 .500 CATHODE
All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Two cathode pins must be externally connected together.
.071 .095
.040 45
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25C
PARAMETERS Total Power Output, Po Radiant Intensity, Ie Peak Emission Wavelength, P Spectral Bandwidth at 50%, Half Intensity Beam Angle, Forward Voltage, VF Capacitance, C Rise Time Fall Time TEST CONDITIONS IF = 500mA IF = 10A IF = 500mA IF = 50mA IF = 500mA IR = 10 A VR = 0V MIN 40 TYP 50 600 500 880 80 7 MAX UNITS mW mW/sr nm nm
Reverse Breakdown Voltage, VR
5
1.65 30 90
2
Volts Volts pF sec sec
Deg
0.7 0.7
ABSOLUTE MAXIMUM RATINGS AT 25C CASE
Continuous Forward Current Reverse Voltage Power Dissipation1
1000mW 500mA 10A 5V
Peak Forward Current (10 s, 400Hz)2 Lead Soldering Temperature (1/16" from case for 10sec)
1Derate per Thermal Derating Curve above 25C 2Derate linearly above 25C
260C
THERMAL PARAMETERS
Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, RTHJA1 Thermal Resistance, RTHJA2
-55C to 100C 150C/W Typical 60C/W Typical 100C
1Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2Air circulating at a rapid rate to keep case temperature at 25C
750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: sales@optodiode.com, Website: www.optodiode.com
SUPERHIGH-POWERGaAlAsIREMITTERS
1,100 1,000 POWER DISSIPATION (mW) 900 800 700 600 500 400 300 200 100 0 25 50 75 AMBIENT TEMPERATURE (C) 100 NO HEAT SINK INFINITE HEAT SINK
OD-50L
THERMAL DERATING CURVE
100 PEAK FORWARD CURRENT, Ip (amps)
MAXIMUM PEAK PULSE CURRENT
10
t = 10 s t = 50 s t = 100 s
MAXIMUM RATINGS
1
t Ip
D=
t T
0.1 0.01
T
0.1 1 DUTY CYCLE, D (%) 10 100
TYPICAL CHARACTERISTICS
100
DEGRADATION CURVE
IF = 150mA
100
RADIATION PATTERN
RELATIVE POWER OUTPUT (%)
80
IF = 250mA
RELATIVE POWER OUTPUT (%)
90
80
60
70
TCASE = 25C NO PRE BURN-IN PERFORMED IF = 450mA
40
60
20
50
101
102
103 STRESS TIME, (hrs)
104
105
0 -25
-20
-15
-10
-5 0 5 10 BEAM ANGLE, (deg)
15
20
25
12 10
FORWARD I-V CHARACTERISTICS
1.5 1.4 RELATIVE POWER OUTPUT 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6
POWER OUTPUT vs TEMPERATURE
FORWARD CURRENT, IF (amps)
8 6 4 2 0
0
2
4 6 FORWARD VOLTAGE, VF (volts)
8
10
0.5 -50
-25
0 25 50 AMBIENT TEMPERATURE (C)
75
100
100
SPECTRAL OUTPUT
1,000
POWER OUTPUT vs FORWARD CURRENT
RELATIVE POWER OUTPUT (%)
60
40
POWER OUTPUT, P (mW) o
80
100
10
20
DC PULSE 10 s, 100Hz
0 750
800
850 900 WAVELENGTH, (nm)
950
1,000
1 10
100 1,000 FORWARD CURRENT, IF (mA)
10,000
750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: sales@optodiode.com, Website: www.optodiode.com


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