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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BDY26 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 180V(Min.) *Collector-Emitter Saturation Voltage: VCE(sat)= 0.6V(Max)@ IC = 2A *High Switching Speed APPLICATIONS *Designed for LF signal powe amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current w ww scs .i VALUE 300 180 10 6 3 87.5 200 -65~200 UNIT V .cn mi e V V A A PC TJ Tstg Collector Power Dissipation@TC=25 Junction Temperature Storage Temperature W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 2.0 UNIT /W isc Websitewww.iscsemi.cn 1 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VCE(sat) VBE(sat) ICES ICEO IEBO hFE fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain CONDITIONS IC= 50mA; IB= 0 IC= 3mA; IE= 0 IC= 2A; IB= 0.25A B BDY26 MIN 180 300 TYP. MAX UNIT V V 0.6 1.2 1.0 1.0 1.0 100 V V mA mA mA IC= 2A; IB= 0.25A B VCE= 250V; VBE= 0 VCE= 180V; IB= 0 VEB= 10V; IC= 0 Current Gain-Bandwidth Product Switching Times ton toff Turn-On Time Turn-Off Time w w C 75-100 scs .i w IC= 5A; IB= 1A B IC= 2A; VCE= 4V IC= 0.5A; VCE= 15V; f=10MHz .cn mi e 15 10 MHz 0.5 2.0 s s IC= 5A; IB1= 1A; IB2= -0.5A hFE Classifications A 15-45 B 30-90 isc Websitewww.iscsemi.cn 2 |
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