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APT100GT60JRDQ4
600V, 100A, VCE(ON) = 2.1V Typical
Thunderbolt IGBT(R)
The Thunderbolt IGBT(R) is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT(R) offers superior ruggedness and ultrafast switching speed.
E G C
E
Features
* Low Forward Voltage Drop * Low Tail Current * Integrated Gate Resistor Low EMI, High Reliability * RoHS Compliant * RBSOA and SCSOA Rated * High Frequency Switching to 50KHz * Ultra Low Leakage Current
S
ISOTOP (R)
OT
22
7
"UL Recognized"
file # E145592
Maximum Ratings Symbol Parameter
VCES VGE IC1 IC2 ICM SSOA PD TJ, TSTG Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 100C Pulsed Collector Current 1 Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range
All Ratings: TC = 25C unless otherwise specified. Ratings
600 Volts 30 148 80 300 300A @ 600V 500 -55 to 150 Watts C Amps
Unit
Static Electrical Characteristics Symbol Characteristic / Test Conditions
V(BR)CES VGE(TH) VCE(ON) Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 4mA) Gate Threshold Voltage (VCE = VGE, IC = 1.5mA, Tj = 25C) Collector Emitter On Voltage (VGE = 15V, IC = 100A, Tj = 25C) Collector Emitter On Voltage (VGE = 15V, IC = 100A, Tj = 125C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25C) 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125C) 2 Gate-Emitter Leakage Current (VGE = 30V)
Min
600 3 1.7 -
Typ
4 2.1 2.5 -
Max
5
Unit
Volts 2.5 50 A 300 nA
052-6294 Rev B 10 - 2008
ICES IGES
1500
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
Dynamic Characteristic
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT100GT60JRDQ4
Test Conditions VGE = 0V, VCE = 25V f = 1MHz Gate Charge VGE = 15V VCE= 300V IC = 100A TJ = 150C, RG = 4.3 , VGE = 15V, L = 100H, VCE= 600V Inductive Switching (25C) VCC = 400V VGE = 15V
4 5
Min 300 -
Typ 5150 475 295 8.0 460 40 210
Max -
Unit
pF
V
Gate-Emitter Charge Gate-Collector Charge Switching Safe Operating Area Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-On Switching Energy
nC
A 40 75 320 100 3250 3525 3125 40 75 350 100 3275 4650 3750 J ns J ns
IC = 100A RG = 4.3 TJ = +25C
Turn-Off Switching Energy 6 Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-On Switching Energy
4 5
Inductive Switching (125C) VCC = 400V VGE = 15V IC = 100A RG = 4.3 TJ = +125C
-
Turn-Off Switching Energy 6
Thermal and Mechanical Characteristics Symbol Characteristic / Test Conditions
RJC RJC WT Torque VIsolation Junction to Case (IGBT) Junction to Case (DIODE) Package Weight Terminals and Mounting Screws RMS Voltage (50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
Min
2500
Typ
29.2 -
Max
0.25
Unit
C/W
0.33 10 1.1 g in*lbf N*m Volts
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages. 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to z a the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance not including gate driver impedance.
052-6294 Rev B 10 - 2008
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Typical Performance Curves
200
V
GE
APT100GT60JRDQ4
300 12, 13, &15V 10V IC, COLLECTOR CURRENT (A) 250 9V 200 8V
= 15V
180 IC, COLLECTOR CURRENT (A) 160 140 120 100 80 60 40 20 0 0 0.5 1 1.5 2 2.5 3 3.5 4 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
TC = 25C
TC = 125C
150
TC = -55C
100
7V 6V
50 0
0 5 10 15 20 25 30 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(VGE = 15V) 200 180 IC, COLLECTOR CURRENT (A) 160 140 120 100 80 60 40 20 0 0 2 4 6 8 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) IC = 200A
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
FIGURE 2, Output Characteristics (TJ = 125C) 16 VGE, GATE-TO-EMITTER VOLTAGE (V)
I = 100A C T = 25C
J
TJ = -55C
14 12 10 8 6 4 2 0 0
VCE = 120V VCE = 300V VCE = 480V
TC = 25C
TC = 125C
100
200 300 400 GATE CHARGE (nC)
500
FIGURE 4, Gate Charge VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 4 3.5 3 2.5 2 1.5 1 0.5 0 0
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.15 0 6 IC = 50A IC = 100A
IC = 200A
IC = 100A
IC = 50A
25 50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 200
IC, DC COLLECTOR CURRENT(A)
1.10 VGS(TH), THRESHOLD VOLTAGE 1.05 (NORMALIZED) 1.00 0.95 0.90 0.85 0.80 0.75 0.70 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Threshold Voltage vs. Junction Temperature
180 160 140 120 100 052-6294 Rev B 10 - 2008 80 60 40 20 0 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature
Typical Performance Curves
35 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 30 25 20 15 10
VCE = 400V
APT100GT60JRDQ4
450 400 350 300 250 200 150 100 50 0
VCE = 400V RG = 4.3 L = 100H VGE =15V,TJ=25C
VGE = 15V
VGE =15V,TJ=125C
5 TJ = 25C, or 125C 0
RG = 4.3 L = 100H
0 25 50 75 100 125 150 175 200 225 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 250
RG = 4.3, L = 100H, VCE = 400V
0 25 50 75 100 125 150 175 200 225 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 200 180
RG = 4.3, L = 100H, VCE = 400V
200 tr, RISE TIME (ns) tf, FALL TIME (ns)
160 140 120 100 80 60 40
TJ = 25 or 125C,VGE = 15V
TJ = 125C, VGE = 15V
150
100
50
TJ = 25C, VGE = 15V
20 0 25 50 75 100 125 150 175 200 225 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 12000 EOFF, TURN OFF ENERGY LOSS (J) 10000 8000 6000 4000 2000
TJ = 25C
V = 400V CE V = +15V GE R = 4.3
G
0 25 50 75 100 125 150 175 200 225 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 16000 EON2, TURN ON ENERGY LOSS (J) 14000 12000
TJ = 125C
V = 400V CE V = +15V GE R = 4.3
G
0
0
TJ = 125C
10000 8000 6000 4000 2000 0
TJ = 25C
0 25 50 75 100 125 150 175 200 225 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 35000 SWITCHING ENERGY LOSSES (J) 30000 25000 20000 15000 10000 5000 0
Eon2,50A Eoff,200A Eon2,100A Eoff,100A Eoff,50A
V = 400V CE = +15V V GE T = 125C
J
0 25 50 70 100 125 150 175 200 225 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 16000 SWITCHING ENERGY LOSSES (J)
V = 400V CE V = +15V GE R = 4.3
G
0
Eon2,200A
Eon2,200A
14000 12000 10000 8000 6000
Eoff,200A
052-6294 Rev B 10 - 2008
4000 Eon2,100A 2000 Eoff,50A 0
Eon2,50A Eoff,100A
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
0
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
Typical Performance Curves
10,000 Cies 5,000 C, CAPACITANCE ( F) IC, COLLECTOR CURRENT (A) 350 300 250 200 150 100 50 0
APT100GT60JRDQ4
P
1,000 500 C0es
Cres 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 100
100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0
0.30
ZJC, THERMAL IMPEDANCE (C/W)
0.25 0.9 0.20 0.7 0.15 0.5 0.10
Note:
PDM
t1 t2
0.3
0.05 0.1 0.05 0 10
-5
SINGLE PULSE 10-4
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
100 FMAX, OPERATING FREQUENCY (kHz) 50
T = 75C
C
TJ (C)
0.0587 Dissipated Power (Watts) 0.0120 0.420 4.48 0.132
TC (C)
0.0587
10 5
T = 125C J D = 50 % V = 400V CE R = 4.3 T = 100C
C
ZEXT
= min (f max, f max2) 0.05 f max1 = t d(on) + tr + td(off) + tf
max
F
f max2 = Pdiss =
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
Pdiss - P cond E on2 + E off TJ - T C R JC
1
G
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
30 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
10 20
052-6294 Rev B 10 - 2008
APT100GT60JRDQ4
APT100DQ60
Gate Voltage 10% TJ = 125C td(on)
V CC
IC
V CE
tr 90% 5% CollectorVoltage Collector Current
5%
10%
A D.U.T.
Switching Energy
Figure 21, Inductive Switching Test Circuit Figure 22, Turn-on Switching Waveforms and Definitions
90%
Gate Voltage
TJ = 125C
td(off) 90% CollectorVoltage
tf
10%
0
Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
052-6294 Rev B 10 - 2008
Typical Performance Curves
APT100GT60JRDQ4
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS Symbol Characteristic / Test Conditions
IF(AV) IF(RMS) IFSM Maximum Average Forward Current (TC = 88C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3 ms)
All Ratings: TC = 25C unless otherwise specified. APT100GT60JRDQ4
100 146 1000 Amps
Unit
STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions
IF = 100A VF Forward Voltage IF = 200A IF = 100A, TJ = 125C
Min
Type
1.6 2.05 1.28
Max
2.2
Unit
Volts
DYNAMIC CHARACTERISTICS Symbol Characteristic
trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
0.35 , THERMAL IMPEDANCE (C/W) 0.30 0.25 0.20 0.5 0.15 0.10 0.05 0 10
-5
Test Conditions
IF = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25C IF = 100A, diF/dt = -200A/s VR = 400V, TC = 25C
Min
-
Typ 34 160 290 5 220 1530 13 100 2890 44
Max
-
Unit
ns
nC Amps ns nC Amps ns nC Amps
IF = 100A, diF/dt = -200A/s VR = 400V, TC = 125C
-
IF = 100A, diF/dt = -1000A/s VR = 400V, TC = 125C
-
D = 0.9
0.7
Note:
PDM
0.3
t1 t2
JC
Z
0.1 0.05 10-4 SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (seconds) FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
TJ (C)
0.0673 Dissipated Power (Watts) 0.0182 0.361 5.17 0.188
TC (C)
0.0743 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL
052-6294 Rev B 10 - 2008
ZEXT
Typical Perfromance Curves
300 trr, REVERSE RECOVERY TIME (ns) TJ = 25C 300
T =125C J V =400V
R
APT100GT60JRDQ4
250 IF, FORWARD CURRENT (A)
250
200A 100A 50A
200 TJ = 175C 150 TJ = 125C 100
200
150
100
50 TJ = -55C 0 0.5 1.0 1.5 2.0 2.5 3.0 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage
T =125C J V =400V
R
50 0
0
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 3. Reverse Recovery Time vs. Current Rate of Change 60 IRRM, REVERSE RECOVERY CURRENT (A)
T =125C J V =400V
R
4000 Qrr, REVERSE RECOVERY CHARGE (nC) 3500 3000 2500 2000 50A 1500 1000 500 0 100A
200A
200A
50
40 100A
30 50A
20
10 0
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 1.2 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) Qrr trr trr IRRM
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 5. Reverse Recovery Current vs. Current Rate of Change 180 160 140
Duty cycle = 0.5 T =175C
J
1.0
0.8
120 IF(AV) (A) 100 80 60 40
0.6 Qrr
0.4
0.2 20 25 50 75 100 125150 25 50 TJ, JUNCTION TEMPERATURE (C) Figure 6. Dynamic Parameters vs. Junction Temperature 1400 CJ, JUNCTION CAPACITANCE (pF) 1200 1000 800 600 400 200 0 0.0 0 125 150 175 Case Temperature (C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 0 75 100
052-6294 Rev B 10 - 2008
10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage
1
APT100GT60JRDQ4
Vr +18V 0V D.U.T. 30H
trr/Qrr Waveform
diF /dt Adjust
APT10035LLL
PEARSON 2878 CURRENT TRANSFORMER
Figure 32, Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
0.25 IRRM
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
5
Figure 33, Diode Reverse Recovery Waveform and Definitions
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
1.95 (.077) 2.14 (.084)
* Emitter/Anode
Collector/Cathode
* Emitter/Anode terminals are shorted internally. Current handling capability is equal for either Emitter/Anode terminal.
* Emitter/Anode ) Dimensions in Millimeters and (Inches
Gate
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 and foreign patents. US and Foreign patents pending. All Rights Reserved.
052-6294 Rev B 10 - 2008

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