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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-3PN package Complement to type BD250/A/B/C 125 W at 25C case temperature 25 A continuous collector current BD249/A/B/C PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL PARAMETER CONDITIONS BD249 BD249A Open base BD249B VALUE 45 60 UNIT VCEO Collector-emitter voltage BD249C VCBO VEBO IC ICM IB PC Tj Tstg CHA IN Emitter-base voltage Collector current Base current Collector-base voltage GE S N BD249 BD249A BD249B BD249C Open base EMIC DUC ON 80 100 55 TOR V 70 V 90 115 Open collector 5 25 40 5 V A A A W ae ae Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25ae 125 -65~150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.0 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD249/A/B/C CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER BD249 BD249A IC=30mA ;IB=0 BD249B BD249C VCEsat-1 VCEsat-2 VBE-1 VBE-2 Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Base-emitter on voltage IC=15A ;IB=1.5A IC=25A ;IB=5A IC=15A ; VCE=4V IC=25A ; VCE=4V VCE=30V; IB=0 VCE=60V; IB=0 VEB=5V; IC=0 80 100 1.8 4 2 4 V V V V CONDITIONS MIN 45 60 V TYP. MAX UNIT SYMBOL V(BR)CEO Collector-emitter breakdown voltage ICEO IEBO hFE-1 hFE-2 hFE-3 Collector cut-off current BD249/249A BD249B/249C Emitter cut-off current DC current gain DC current gain DC current gain Switching times ton toff ANG INCH EMIC ES IC=1.5A ; VCE=4V IC=15A ; VCE=4V IC=25A ; VCE=4V IC=1A; IB1=-IB2=0.5A RL=5| OND 25 10 5 TOR UC 1 1 mA mA Turn-on time Turn-off time 0.3 0.9 |I |I s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BD249/A/B/C SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 |
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