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| DC COMPONENTS CO., LTD. R 2N6517 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for applications requiring high breakdown voltage. TO-92 .190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ .500 Min (12.70) o o Pinning 1 = Emitter 2 = Base 3 = Collector Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating 350 350 5 500 625 +150 -55 to +150 Unit V V V mA mW o o .050 Typ (1.27) .022(0.56) .014(0.36) .100 Typ (2.54) .022(0.56) .014(0.36) 321 .148(3.76) .132(3.36) C .050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters) C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat)1 VCE(sat)2 VCE(sat)3 VBE(sat)1 Min 350 350 5 20 30 30 20 40 2% Typ - Max 50 50 0.30 0.35 0.50 0.75 0.85 0.90 2 200 200 200 6 Unit V V V nA nA V V V V V V V MHz pF Test Conditions IC=100A, IE=0 IC=1mA, IB=0 IE=10A, IC=0 VCB=250V, IE=0 VEB=5V, IC=0 IC=10mA, IB=1mA IC=20mA, IB=2mA IC=30mA, IB=3mA IC=10mA, IB=1mA IC=20mA, IB=2mA IC=30mA, IB=3mA IC=100mA, VCE=10V IC=1mA, VCE=10V IC=10mA, VCE=10V IC=30mA, VCE=10V IC=50mA, VCE=10V IC=10mA, VCE=20V, f=20MHz VCB=20V, f=1MHz, IE=0 Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current EmitterCutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1) Base-Emitter On Voltage(1) VBE(sat)2 VBE(sat)3 VBE(on) hFE1 hFE2 hFE3 hFE4 fT Cob DC Current Gain(1) Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width 380s, Duty Cycle |
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