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| EIC1212-4 ISSUED DATE: 09/20//2007 12.20-12.70 GHz 4-Watt Internally Matched Power FET FEATURES * * * * * * * 12.20-12.70GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 dBm Output Power at 1dB Compression 6.5dB Power Gain at 1dB Compression 28% Power Added Efficiency -46 dBc IM3 at PO = 25.5 dBm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25C) SYMBOL P1dB G1dB G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 12.20-12.70GHz VDS = 10 V, IDSQ 1100mA Gain at 1dB Compression f = 12.20-12.70GHz VDS = 10 V, IDSQ 1100mA Gain Flatness f = 12.20-12.70GHz VDS = 10 V, IDSQ 1100mA Power Added Efficiency at 1dB Compression f = 12.20-12.70GHz VDS = 10 V, IDSQ 1100mA Drain Current at 1dB Compression f = 12.20-12.70GHz Output 3rd Order Intermodulation Distortion 2 f = 10 MHz 2-Tone Test; Pout = 25.5 dBm S.C.L VDS = 10 V, IDSQ 65% IDSS f = 12.70GHz Saturated Drain Current VDS = 3 V, VGS = 0 V Pinch-off Voltage Thermal Resistance 3 Caution! ESD sensitive device. MIN 35.5 5.5 TYP 36.5 6.5 MAX UNITS dBm dB 0.6 28 1100 -43 -46 2000 -2.5 5.5 2500 -4.0 6.0 o dB % 1300 mA dBc mA V C/W VDS = 3 V, IDS = 20 mA Note: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING1,2 SYMBOLS PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 15V -5V 48mA -9.6mA 35.5dBm 175C -65C to +175C 25W CONTINUOUS2 10V -4V 14.4mA -2.4mA @ 3dB Compression 175C -65C to +175C 25W Vds Vgs Igsf Igsr Pin Tch Tstg Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 2 Revised October 2007 EIC1212-4 ISSUED DATE: 09/20//2007 12.20-12.70 GHz 4-Watt Internally Matched Power FET PACKAGES OUTLINE Dimensions in inches, Tolerance + .005 unless otherwise specified EIC1212-4 (Hermetic) EIC1212-4NH (Non-Hermetic) Excelics EIC1212-4 Excelics EIC1212-4NH YYWW YYWW ALL DIMENSIONS IN INCHES ALL DIMENSIONS IN INCHES Caution! ESD sensitive device. Caution! ESD sensitive device. ORDERING INFORMATION Part Number EIC1212-4 EIC1212-4NH Notes: Packages Hermetic Non-Hermetic Grade1 Industrial Industrial fTest (GHz) 12.20-12.70GHz 12.20-12.70GHz P1dB (min) 35.5 35.5 IM3 (min)2 -43 -43 1. Contact factory for military and hi-rel grades. 2. Exact test conditions are specified in "Electrical Characteristics" table. DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 2 of 2 Revised October 2007 |
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