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NSS20101J 20 V, 1.0 A, Low VCE(sat) NPN Transistor
ON Semiconductor's e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC-DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU's control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. * This is a Pb-Free Device
MAXIMUM RATINGS (TA = 25C)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector Current - Peak Electrostatic Discharge Symbol VCEO VCBO VEBO IC ICM ESD Max 20 40 6.0 1.0 2.0 Unit Vdc Vdc Vdc A A
3 2
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20 VOLTS, 1.0 AMPS NPN LOW VCE(sat) TRANSISTOR
COLLECTOR 3 1 BASE 2 EMITTER
MARKING DIAGRAM & PIN ASSIGNMENT
3 Collector xx M G G 1 Base 2 Emitter
HBM Class 3B MM Class C
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Range Symbol PD (Note 1) Max 255 2.0 RqJA (Note 1) PD (Note 2) 490 300 2.4 RqJA (Note 2) TJ, Tstg 415 -55 to +150 Unit mW mW/C C/W mW mW/C C/W C
1
SC-89 CASE 463C
xx = Specific Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location.
ORDERING INFORMATION
Device NSS20101JT1G Package SC-89 (Pb-Free) Shipping 3000/Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-4 @ 100 mm2, 1 oz. copper traces. 2. FR-4 @ 500 mm2, 1 oz. copper traces.
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2008
September, 2008 - Rev. 0
1
Publication Order Number: NSS20101J/D
NSS20101J
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector -Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Emitter -Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 5.0 Vdc) ON CHARACTERISTICS DC Current Gain (Note 3) (IC = 10 mA, VCE = 2.0 V) (IC = 100 mA, VCE = 2.0 V) (IC = 500 mA, VCE = 2.0 V) (IC = 1.0 A, VCE = 2.0 V) Collector -Emitter Saturation Voltage (Note 3) (IC = 10 mA, IB = 0.5 mA) (IC = 0.10 A, IB = 0.010 A) (IC = 0.5 A, IB = 0.050 A) (IC = 1.0 A, IB = 0.1 A) Base -Emitter Saturation Voltage (Note 3) (IC = 0.5 A, IB = 50 mA) Base -Emitter Turn-on Voltage (Note 3) (IC = 0.5 A, VCE = 2.0 V) Cutoff Frequency (IC = 100 mA, VCE = 2.0 V, f = 100 MHz) Input Capacitance (VEB = 0.5 V, f = 1.0 MHz) Output Capacitance (VCB = 4.0 V, f = 1.0 MHz) 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%. hFE 200 200 150 100 V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Vdc 20 Vdc 40 Vdc 6.0 0.1 0.1 mAdc mAdc Symbol Min Typ Max Unit
500
VCE(sat)
V 0.015 0.040 0.115 0.220 1.1 0.90 350 40 6 V V MHz pF pF
VBE(sat) VBE(on) fT Cibo Cobo
TYPICAL CHARACTERISTICS
0.40 PD, POWER DISSIPATION (W) 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 0 20 40 60 80 100 120 140 160 Note 2 Note 1 hFE, DC CURRENT GAIN 600 150C 500 400 300 200 100 0 -55C VCE = 2 V
25C
0.001
0.01
0.1
1
10
TJ, JUNCTION TEMPERATURE (C)
IC, COLLECTOR CURRENT (A)
Figure 1. Power Derating
Figure 2. DC Current Gain
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NSS20101J
TYPICAL CHARACTERISTICS
600 500 400 300 200 100 0 -55C 25C VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 150C 1 VCE = 4 V 150C 25C 0.1 -55C
hFE, DC CURRENT GAIN
0.01
IC/IB = 10 0.001 0.01 0.1 1 10
0.001
0.01
0.1
1
10
0.001
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain
1 VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC/IB = 20 25C 0.1 150C -55C VBE(sat), BASE-EMITTER SATURATION VOLTAGE (V) 1.4
Figure 4. Collector-Emitter Saturation Voltage
IC/IB = 10 1.2 1.0 -55C 0.8 0.6 150C 0.4 0.2 25C
0.01
0.001
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 5. Collector-Emitter Saturation Voltage
VBE(sat), BASE-EMITTER SATURATION VOLTAGE (V) 1.4 IC/IB = 50 1.2 1.0 0.8 0.6 0.4 0.2
Figure 6. Base-Emitter Saturation Voltage
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.001 0.01 0.1 1 10 VCE = 2 V
-55C 25C 150C
VBE(on), BASE-EMITTER VOLTAGE (V)
-55C 25C 150C
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 7. Base-Emitter Saturation Voltage
Figure 8. Base-Emitter Voltage
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NSS20101J
TYPICAL CHARACTERISTICS
1 VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC = 2 A IC = 1 A IC = 0.5 A 0.1 IC = 0.1 A IC = 50 mA 0.0001 0.001 0.01 0.1 1 Cibo, INPUT CAPACITANCE (pF) 60 50 40 30 20 10 0 TJ = 25C fTEST = 1 MHz
0.01
0
1
2
3
4
5
6
7
8
IB, BASE CURRENT (A)
VEB, BASE EMITTER VOLTAGE (V)
Figure 9. Saturation Region
fTau, CURRENT GAIN BANDWIDTH PRODUCT 12 Cobo, OUTPUT CAPACITANCE (pF) 10 8 6 4 2 0 TJ = 25C fTEST = 1 MHz 400 350 300 250 200 150 100 50 0 0.001
Figure 10. Input Capacitance
TJ = 25C fTEST = 1 MHz VCE = 2 V
0
5
10
15
20
25
30
35
0.01
0.1
1
VCB, COLLECTOR-BASE VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
Figure 11. Output Capacitance
10 IC, COLLECTOR CURRENT (A) TJ = 25C 100 ms 10 ms 1 ms
Figure 12. Current Gain Bandwidth Product
1
0.5 ms
0.1
Thermal Limit
0.01
0.1
1
10
100
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 13. Safe Operating Area
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NSS20101J
PACKAGE DIMENSIONS SC-89, 3 LEAD CASE 463C-03 ISSUE C
A -X-
3 1 2
B -Y- S
K
2 PL
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 463C-01 OBSOLETE, NEW STANDARD 463C-02. MILLIMETERS MIN NOM MAX 1.50 1.60 1.70 0.75 0.85 0.95 0.60 0.70 0.80 0.23 0.28 0.33 0.50 BSC 0.53 REF 0.10 0.15 0.20 0.30 0.40 0.50 1.10 REF --- --- 10 _ --- --- 10 _ 1.50 1.60 1.70 INCHES NOM MAX 0.063 0.067 0.034 0.040 0.028 0.031 0.011 0.013 0.020 BSC 0.021 REF 0.004 0.006 0.008 0.012 0.016 0.020 0.043 REF --- --- 10 _ --- --- 10 _ 0.059 0.063 0.067 MIN 0.059 0.030 0.024 0.009
G
D 0.08 (0.003)
M
3 PL
XY
M C
J
N
DIM A B C D G H J K L M N S
-T-
SEATING PLANE
SOLDERING FOOTPRINT*
H H
L
G *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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NSS20101J/D

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