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GT40T302
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT40T302
Parallel Resonance Inverter Switching Applications
Unit: mm * * * * FRD included between emitter and collector Enhancement mode High speed IGBT: tf = 0.23 s (typ.) (IC = 40 A) FRD: trr = 0.7 s (typ.) (di/dt = -20 A/s) Low saturation voltage: VCE (sat) = 3.7 V (typ.) (IC = 40 A)
Absolute Maximum Ratings (Ta = 25C)
Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IF IFP PC Tj Tstg Rating 1500 25 40 80 30 80 200 150 -55 to 150 Unit V V A
Diode forward current
A W C C
JEDEC JEITA TOSHIBA
2-21F2C
Collector power dissipation (Tc = 25C) Junction temperature Storage temperature range
Weight: 9.75 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Equivalent Circuit
Collector
Marking
Part No. (or abbreviation code) TOSHIBA
Gate
GT40T302
Lot No.
JAPAN
Emitter A line indicates Lead(Pb)-Free Finish
1
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GT40T302
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Diode forward voltage Reverse recovery time Thermal resistance Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff VF trr Rth (j-c) 15 51 15 V 0 -15 V IF = 30 A, VGE = 0 IF = 30 A, VGE = 0, di/dt = -20 A/s IGBT Diode Test Condition VGE = 25 V, VCE = 0 VCE = 1500 V, VGE = 0 IC = 40 mA, VCE = 5 V IC = 40 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz Min 4.0 Typ. 3.7 2900 0.40 0.45 0.23 0.6 1.9 0.7 Max 500 1.0 7.0 5.0 Unit nA mA V V pF

0.40
s
600 V
2.5 3.0 0.625 1.25 V s C/W
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GT40T302
IC - VCE
100 25 80 20 15 10 Common emitter
VCE - VGE
VCE (V)
12
Tc = -40C 8 60 6 20 4 80 40
Collector current IC
(A)
60
40
10
Collector-emitter voltage
20 VGE = 8 V 0 0 2 4 6 8 10
2
IC = 10 A
0 0
4
8
12
16
20
Collector-emitter voltage
VCE (V)
Gate-emitter voltage
VGE (V)
VCE - VGE
10 Common emitter 10 Tc = 25C 8
VCE - VGE
VCE (V)
VCE (V)
8
Collector-emitter voltage
6 60 4 40 20 IC = 10 A
Collector-emitter voltage
80 6 60 40 4 20 2 Common emitter Tc = 125C 0 0
80
2
IC = 10 A
0 0
4
8
12
16
20
4
8
12
16
20
Gate-emitter voltage
VGE (V)
Gate-emitter voltage
VGE (V)
IC - VGE
100 Common emitter 80 10
VCE (sat) - Tc
Common emitter
Collector-emitter saturation voltage VCE (sat) (V)
VCE = 5 V
VGE = 15 V 8
Collector current IC
(A)
60
6
80 60
40 25 20 Tc = 125C -40 0 0 4 8 12 16 20
4
40 20
2
IC = 10 A
0 -80
-40
0
40
80
120
160
Gate-emitter voltage
VGE (V)
Case temperature Tc (C)
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GT40T302
VCE, VGE - QG
10
Switching time - RG
Common emitter RL = 7.5 Tc = 25C Common emitter VCC = 600 V IC = 40 A VGG = 15 V Tc = 25C toff ton tr
Collector-emitter voltage VCE (x10 V) Gate-emitter voltage VGE (V)
Switching time (s)
30
5 3
20
1 0.5 0.3
10
200
300
tf
VCE = 100 V 0 0 40 80 120 160 200 240 280 0.1 1 3 5 10 30 50 100 300 500 1000
Gate charge QG (nC)
Gate resistance
RG
()
Switching time - IC
10 5 3 Common emitter VCC = 600 V RG = 51 VGG = 15 V Tc = 25C toff ton tr tf 10000 5000 3000
C - VCE
Cies
Switching time (s)
(pF) Capacitance C
1000 500 300 Coes 100 50 30 10 5 3 1 1 Common emitter VGE = 0 V f = 1 MHz Tc = 25C Cres
1 0.5 0.3
0.1 0.05 0.03
0.01 0
10
20
30
40
50
3
5
10
30
50
100
Collector current IC
(A)
Collector-emitter voltage
VCE (V)
Safe operating area
300 IC max (pulsed)* 200 10 ms* 1 ms* 10 s* IC max (continuous) 100 s* 100
Reverse bias SOA
(A)
100 50 30
Collector current IC
Collector current IC
(A)
30 10 Tj 125C VGE = 15 V RG = 51 3 10
10 5 DC operation
3 *: Single nonrepetitive pulse Tc = 25C 1 Curves must be derated linearly with increase in 0.5 temperature. 0.3 1 3 10 30
100
300
1000
3000
30
100
300
1000
3000
Collector-emitter voltage
VCE (V)
Collector-emitter voltage
VCE (V)
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GT40T302
10
1
Rth (t) - tw
100
IF - V F
Common collector
Transient thermal impedance Rth (t) (C/W)
(A)
10
0
Diode
80
Forward current IF
60
Tc = 40C 25
10-1
IGBT
40 125 20
10-2
Tc = 25C 10-3 10-5 10-4 10-3 10-2 10-1 10 0 10 1 10 2 0 0 1 2 3 4 5
Pulse width
tw
(s)
Forward voltage VF
(V)
Irr, trr - IF
2.5 20 1.0 50
Irr, trr - di/dt
Irr (A)
Common collector Common collector 40 IF = 30 A Tc = 25C
Irr (A)
(s)
2.0
16
(s)
di/dt = -20 A/s Tc = 25C
0.8
Peak reverse recovery current
1.5
12
0.6
Peak reverse recovery current
trr
Reverse recovery time
Reverse recovery time
trr
30 trr 20
1.0
8
Irr
0.4
0.5
4
trr
0.2
10
Irr
0
0 0
20
40
60
80
100
0
0 0
-20
-40
-60
-80
-100
-120
Forward current IF
(A)
di/dt (A/s)
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GT40T302
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN GENERAL
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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2008-12-26

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