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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 30 Volts CURRENT 0.5 Ampere APPLICATION * * * * * Ultra high-speed switching Voltage clamping Protection circuit Low current rectification Low power consumption applications 0.50.05 1.00.05 0.37(REF.) 1.00.05 0.25(REF.) 0.050.04 0.680.05 0.420.05 CH551N1PT FBPT-923 FEATURE * Small surface mounting type. (FBPT-923) * Ultra low VF. (VF=0.41V Typ. at 0.5A) * High reliability CONSTRUCTION * Silicon epitaxial planar CIRCUIT (2) (1) 0.30.05 0.260.05 (3) MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current at 8.3 mSec single half sine-wave Typical Junction Capacitance between Terminal (Note 1) Maximum Operating Temperature Range Storage Temperature Range SYMBOL VRRM VRMS VDC IO IFSM CJ TJ TSTG Dimensions in millimeters FBPT-923 CH551N1PT 30 21 20 0.5 2.0 15 +125 -40 to +125 UNITS Volts Volts Volts Amps Amps pF o C C o ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CHARACTERISTICS Maximum Instantaneous Forward Voltage at IF(1)= 100mA Maximum Instantaneous Forward Voltage at IF(2)= 500mA Maximum Average Reverse Current at VR= 20V SYMBOL VF(1) VF(2) IR CH551N1PT 0.36 0.47 100 UNITS Volts Volts uAmps 2006-07 NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 10.0 volts. 2. ESD sensitive product handling required. RATING CHARACTERISTIC CURVES ( CH551N1PT ) FIG. 1 - FORWARD CHARACTERISTICS 10A 100m REVERSE CURRENT, (A) 10m 1m 100u 10u 1u 100n o -25 C o Ta=125 C FIG. 2 - REVERSE CHARACTERISTICS FORWARD CURRENT, (A) 1A o 75 C 100m 10m 1m o Ta=125 C 75oC o 25 C 25oC o -25 C 100u 0.0 0.1 0.2 0.3 0.4 0.5 0 10 20 30 40 FORWARD VOLTAGE, (V) REVERSE VOLTAGE, (V) FIG. 3 - TYPICAL JUNCTION CAPACITANCE 1000 JUCTION CAPACITANCE (pF) 100 10 1 0 10 20 30 40 REVERSE VOLTAGE, (V) |
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