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APTGV100H60BTPG
Boost chopper CoolMosTM + full bridge NPT & Trench + Field Stop IGBT Power module
Trench & Field Stop IGBT Q1, Q3: VCES = 600V ; IC = 100A @ Tc = 80C Fast NPT IGBT Q2, Q4: VCES = 600V ; IC = 100A @ Tc = 80C CoolMOSTM Q5: VCES = 600V ; IC = 95A @ Tc = 25C
CR3
K
VBUS1
VBUS2
Q1 CR5 G1 E1 D Q5 G5 S5 G2 E2 Q2 CR2 G4 E4 OUT1 CR1 G3 E3
Q3
Application * Solar converter
OUT2 Q4 CR4
Features * Q2, Q4 (FAST Non Punch Through (NPT) IGBT) - Switching frequency up to 100 kHz - RBSOA & SCSOA rated - Low tail current * Q1, Q3 (Trench & Field Stop IGBT) - Low voltage drop - Switching frequency up to 20 kHz - RBSOA & SCSOA rated - Low tail current Q5 (CoolMOSTM) - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated * * * * Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring
S
0/VBUS1
0/VBUS2
NTC1
NTC
NTC2
Full bridge top switches : Trench + Field Stop IGBT Full bridge bottom switches : FAST NPT IGBT Q5 boost chopper : CoolMOSTM
K
VBUS 1
VBUS 2
G5 NTC1 NTC2 S5 D 0/VBUS 1
G1 E1 E2 G2 0/VBUS 2
G3 E3 E4 G4
S
OUT 1
OUT2
Benefits Optimized conduction & switching losses Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting * Low profile * Easy paralleling due to positive TC of VCEsat * RoHS Compliant
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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* * * *
APTGV100H60BTPG
All ratings @ Tj = 25C unless otherwise specified 1. Full bridge top switches 1.1 Top Trench + Field Stop IGBT characteristics Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C Tj = 150C Test Conditions VGE = 0V, VCE = 600V Tj = 25C VGE =15V IC = 100A Tj = 150C VGE = VCE , IC = 1.5 mA VGE = 20V, VCE = 0V Max ratings 600 150 100 200 20 340 200A @ 550V Unit V A V W
Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Min Typ 1.5 1.7 5.8 Max 250 1.9 6.5 400 Unit A V V nA
5.0
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff RthJC Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Junction to Case Thermal resistance Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 300V IC = 100A RG = 3.3 Inductive Switching (150C) VGE = 15V VBus = 300V IC = 100A RG = 3.3 VGE = 15V Tj = 25C VBus = 300V Tj = 150C IC = 100A Tj = 25C RG = 3.3 Tj = 150C Min Typ 6100 390 190 115 45 225 55 130 50 300 70 0.4 0.875 2.5 3.5 0.44 Max Unit pF
ns
ns
mJ
C/W
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mJ
APTGV100H60BTPG
1.2 Top fast diode characteristics
Symbol Characteristic VRRM IRM IF VF trr Qrr RthJC
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C Tc = 80C IF = 100A IF = 200A IF = 100A IF = 100A VR = 400V di/dt =200A/s
Min 600
Typ
Max 100 500
Unit V A A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
VR=600V
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
100 1.6 2 1.3 160 220 290 1530
2 V
Reverse Recovery Time Reverse Recovery Charge Junction to Case Thermal resistance
ns nC 0.55
C/W
2. Full bridge bottom switches 2.1 Bottom Fast NPT IGBT characteristics Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Tc = 25C Tc = 80C Tc = 25C Tc = 25C Tj = 150C Max ratings 600 110 90 315 20 416 200A @ 600V Unit V A V W
Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V Tj = 25C VCE = 600V Tj = 125C Tj = 25C VGE =15V IC = 90A Tj = 125C VGE = VCE, IC = 1mA VGE = 20 V, VCE = 0V Min Typ Max 250 500 2.5 5 150 Unit A V
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2.0 2.2 3
V nA
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APTGV100H60BTPG
Dynamic Characteristics
Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff RthJC Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Emitter Charge Gate - Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Junction to Case Thermal resistance Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE = 15V VBus = 300V IC = 90A Inductive Switching (25C) VGE = 15V VBus = 400V IC = 90A RG = 5 Inductive Switching (125C) VGE = 15V VBus = 400V IC = 90A RG = 5 VGE = 15V Tj = 125C VBus = 400V IC = 90A Tj = 125C RG = 5 Min Typ 4300 470 400 330 290 200 26 25 150 30 26 25 170 40 4.3 mJ 3.5 0.3
C/W
Max
Unit pF
nC
ns
ns
2.2 Bottom diode characteristics
Symbol Characteristic VRRM IRM IF VF
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C Tc = 80C IF = 30A IF = 60A IF = 30A IF = 30A VR = 400V di/dt =200A/s
Min 600
Typ
Max 250 500
Unit V A A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
VR=600V
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
30 1.6 1.9 1.4 85 160 130 700
1.8 V
trr Qrr RthJC
Reverse Recovery Time Reverse Recovery Charge Junction to Case Thermal resistance
ns nC
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1.2
C/W
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3. Boost chopper switch 3.1 CoolMOSTM characteristics Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Test Conditions
VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V
Tc = 25C Tc = 80C
Tc = 25C
Max ratings 600 95 70 240 20 23 460 15 3 1900 Min Typ Max 350 600 23 3.9 200
Unit V A V m W A mJ
Electrical Characteristics
Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Unit A m V nA Tj = 25C Tj = 125C 2.1 20 3
VGS = 10V, ID = 47.5A VGS = VDS, ID = 6mA VGS = 20 V, VDS = 0V Test Conditions VGS = 0V ; VDS = 25V f = 1MHz VGS = 10V VBus = 300V ID = 95A Inductive Switching (125C) VGS = 10V VBus = 400V ID = 95A RG = 2.5 Inductive switching @ 25C VGS = 10V ; VBus = 400V ID = 95A ; RG = 2.5 Inductive switching @ 125C VGS = 10V ; VBus = 400V ID = 95A ; RG = 2.5
Dynamic Characteristics
Symbol Characteristic Input Capacitance Ciss Crss Reverse Transfer Capacitance Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff RthJC Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Junction to Case Thermal resistance
Min
Typ 14.4 0.58 300 68 102 21 30 100 45 1350 1040 2192 1270
Max
Unit nF
nC
ns
J
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C/W
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3.2 Chopper diode characteristics
Symbol Characteristic VRRM IRM IF VF trr Qrr RthJC
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C Tc = 80C IF = 100A IF = 200A IF = 100A IF = 100A VR = 400V di/dt =200A/s
Min 600
Typ
Max 100 500
Unit V A A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
VR=600V
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
100 1.6 2 1.3 160 220 290 1530
2 V
Reverse Recovery Time Reverse Recovery Charge Junction to Case Thermal resistance
ns nC 0.55
C/W
4. Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K
RT = R25 1 1 T: Thermistor temperature exp B25 / 85 T - T RT: Thermistor value at T 25
Min
Typ 50 3952
Max
Unit k K
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5. Package characteristics
Symbol Characteristic VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz TJ Operating junction temperature range TSTG Storage Temperature Range TC Operating Case Temperature Torque Mounting torque To heatsink M6 Wt Package Weight * Tj=175C for Trench & Field Stop IGBT Min 2500 -40 -40 -40 2.5 Typ Max 150* 125 100 4.7 250 Unit V C N.m g
6. SP6-P Package outline (dimensions in mm)
9 places (3:1)
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com
7. Full bridge top switches curves 7.1 Top Trench + Field Stop IGBT typical performance curves
200 175 150
IC (A) Output Characteristics (VGE=15V)
TJ=25C TJ=125C
Output Characteristics 200 175 150 IC (A)
TJ = 150C VGE=19V
125 100 75 50 25 0 0 0.5 1
TJ=25C
TJ=150C
125 100 75 50 25 0
VGE=13V VGE=15V
VGE=9V
1.5 VCE (V)
2
2.5
3
0
0.5
1
1.5 2 VCE (V)
2.5
3
3.5
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200 175 150 125 IC (A) 100 75 50 25 0 5 6 7 8 9 10 11 12 VGE (V) Switching Energy Losses vs Gate Resistance 8
VCE = 300V VGE =15V IC = 100A TJ = 150C TJ=125C TJ=150C TJ=25C
Transfert Characteristics 7
TJ=25C
Energy losses vs Collector Current 6 5 E (mJ) 4 3 2 1 0 0 25 50 75 100 125 150 175 200 IC (A) Reverse Bias Safe Operating Area 250
Eon VCE = 300V VGE = 15V RG = 3.3 TJ = 150C Eoff
6 E (mJ)
Eoff
200 IF (A) 150 100
4
2
Eon
50 0 0 5 10 15 20 25 Gate Resistance (ohms) 30 0
VGE=15V TJ=150C RG=3.3
0
100
200
300 400 VCE (V)
500
600
700
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.5 Thermal Impedance (C/W) 0.4 0.3 0.5 0.2 0.1 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.9 0.7
0.05 0 0.00001
Rectangular Pulse Duration in Seconds
7.2 Top Fast diode typical performance curves
Forw ard Current vs Forw ard Voltage 300 IF, Forward Current (A) 250 200 150 100 50 0 0.0 0.5 1.0 1.5 2.0 2.5 V F, Anode to Cathode Voltage (V)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.6 Thermal Impedance (C/W) 0.5 0.4 0.3 0.2 0.1 0 0.00001 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse
T J=25C T J=1 25C
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
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8. Full bridge bottom switches curves 8.1 Bottom fast NPT IGBT typical performance curves
Output characteristics (VGE=15V) Output Characteristics (VGE=10V) 300
350 Ic, Collector Current (A) 300 250 200 150 100 50 0 0 1 2 3 VCE, Collector to Emitter Voltage (V)
Transfer Characteristics
TJ=125C
Ic, Collector Current (A)
250s Pulse Test < 0.5% Duty cycle TJ=25C
250 200
250s Pulse Test < 0.5% Duty cycle
TJ=25C
150 100
TJ=125C
50 0
4
0
VCE, Collector to Emitter Voltage (V)
1
2
3
4
300
VGE, Gate to Emitter Voltage (V)
18
250s Pulse Test < 0.5% Duty cycle
Gate Charge
IC = 90A TJ = 25C VCE=120V VCE=300V
Ic, Collector Current (A)
250 200 150 100 50 0 0
16 14 12 10 8 6 4 2 0 0
VCE=480V
TJ=125C
TJ=25C
1
23456789 VGE, Gate to Emitter Voltage (V)
10
50
100 150 200 250 Gate Charge (nC)
300
350
VCE, Collector to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt. 8 7 6 5 4 3 2 1 0 6 10 12 14 VGE, Gate to Emitter Voltage (V) 8 16
Ic=90A Ic=45A TJ = 25C 250s Pulse Test < 0.5% Duty cycle Ic=180A
VCE, Collector to Emitter Voltage (V)
On state Voltage vs Junction Temperature 4 3.5 3 2.5 2 1.5 1 0.5 0 25 50 75 100 125 TJ, Junction Temperature (C) DC Collector Current vs Case Temperature
Ic=45A 250s Pulse Test < 0.5% Duty cycle VGE = 15V Ic=90A Ic=180A
Breakdown Voltage vs Junction Temp. Collector to Emitter Breakdown Voltage (Normalized) 1.20 Ic, DC Collector Current (A)
120 100 80 60 40 20 0 25 50 75 100 125 150
TC, Case Temperature (C)
1.10
1.00
0.80 25 50 75 100 125 TJ, Junction Temperature (C)
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Turn-On Delay Time vs Collector Current td(on), Turn-On Delay Time (ns) td(off), Turn-Off Delay Time (ns) 35
VGE = 15V
Turn-Off Delay Time vs Collector Current 250
VGE=15V, TJ=125C
30 25 20 15 25 50 75 100 125 150 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current 80
VCE = 400V RG = 5 Tj = 25C VCE = 400V RG = 5
200
150
100
VCE = 400V RG = 5
VGE=15V, TJ=25C
50 25 50 75 100 125 150 ICE, Collector to Emitter Current (A) Current Fall Time vs Collector Current
VCE = 400V, VGE = 15V, RG = 5
80
tr, Rise Time (ns)
tf, Fall Time (ns)
60
VGE=15V, TJ=125C
60
TJ = 125C
40
40
20
20
TJ = 25C
0 25 50 75 100 125 ICE, Collector to Emitter Current (A) 150
0 25 50 75 100 125 ICE, Collector to Emitter Current (A) 150
Turn-On Energy Loss vs Collector Current Eoff, Turn-off Energy Loss (mJ) 8 Eon, Turn-On Energy Loss (mJ) 6 4 2 0 0 25 50 75 100 125 150 ICE, Collector to Emitter Current (A) Switching Energy Losses vs Gate Resistance 16 Switching Energy Losses (mJ) IC, Collector Current (A)
VCE = 400V VGE = 15V TJ= 125C
Eon, 180A Eoff, 180A
6 5 4 3 2 1 0
Turn-Off Energy Loss vs Collector Current
VCE = 400V VGE = 15V RG = 5
TJ = 125C
VCE = 400V RG = 5
TJ=125C, VGE=15V
TJ=25C, VGE=15V
TJ = 25C
0
25
50
75
100
125
150
ICE, Collector to Emitter Current (A) Reverse Bias Safe Operating Area 250 200 150 100 50 0 0 200 400 600 800 VCE, Collector to Emitter Voltage (V)
12
Eoff, 90A
8
Eon, 90A Eoff, 45A
4
Eon, 45A
0 0 10 20 30 40 50 Gate Resistance (Ohms)
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Capacitance vs Collector to Emitter Voltage Fmax, Operating Frequency (kHz) 10000
Cies
200 160 120 80 40 0
Operating Frequency vs Collector Current
VCE = 400V D = 50% RG = 5 TJ = 125C TC = 75C
C, Capacitance (pF)
ZVS
1000
Coes Cres
ZCS
Hard switching
100 0 10 20 30 40 50 VCE, Collector to Emitter Voltage (V)
20
40 60 80 100 IC, Collector Current (A)
120
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15 0.1 0.05 0.5 0.3 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) 1 10 0.9 0.7
0 0.00001
8.2 Bottom diode typical performance curves
Forw ard Current vs Forw ard Voltage 80 IF, Forward Current (A) 70 60 50 40 30 20 10 0 0.0 0.5 1.0 1.5 2.0 2.5 V F, Anode to Cathode Voltage (V)
T J=25C T J=1 25C
Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 1.4 Thermal Impedance (C/W) 1.2 1 0.8 0.6 0.4 0.2 0 0.00001 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.9 0.7 0.5
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
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9. Boost chopper switch curves 9.1 CoolMOSTM typical performance curves
0.3 Thermal Impedance (C/W) 0.25 0.2 0.15 0.1 0.05 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 1 10
0 0.00001
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 720 640 ID, Drain Current (A) 560 480 400 320 240 160 80 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.3 ID, DC Drain Current (A) 1.25 1.2 1.15 1.1 1.05 1 0.95 0.9 0 40 80 120 160 200 240 280 ID, Drain Current (A)
VGS=20V Normalized to VGS=10V @ 95A VGS=10V 5V 4.5V 4V
Transfert Characteristics 280 ID, Drain Current (A) 240 200 160 120 80 40 0 25 0 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 7
TJ=125C TJ=25C VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
VGS=15&10V
6.5V 6V 5.5V
RDS(on) Drain to Source ON Resistance
DC Drain Current vs Case Temperature 100 80 60 40 20
25
50 75 100 125 TC, Case Temperature (C)
150
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APTGV100H60BTPG
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.1 VGS(TH), Threshold Voltage (Normalized) 1.0 0.9 0.8 0.7 0.6 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 1000000 C, Capacitance (pF) 100000 10000 1000 100 10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) Crss Coss Ciss 1000 ID, Drain Current (A) ON resistance vs Temperature
3.0 2.5 2.0 1.5 1.0 0.5 0.0 25 50 75 100 125 150 TJ, Junction Temperature (C)
Maximum Safe Operating Area
VGS=10V ID= 95A
100
limited by RDSon
100 s
10
Single pulse TJ=150C TC=25C
1 ms 10 ms
1 1 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 12 10 8 6 4 2 0 0 40 80 120 160 200 240 280 320 Gate Charge (nC)
VDS=480V
ID=95A TJ=25C
VDS=120V VDS=300V
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140 120
td(on) and td(off) (ns) Delay Times vs Current 70
td(off) VDS=400V RG=2.5 TJ=125C L=100H td(on)
Rise and Fall times vs Current 60 tr and tf (ns) 50 40 30 20 10 tr
VDS=400V RG=2.5 TJ=125C L=100H
100 80 60 40 20 0 0
tf
20 40 60 80 100 120 140 160
ID, Drain Current (A) Switching Energy vs Current
0 0 20 40 60 80 100 120 140 160 ID, Drain Current (A) Switching Energy vs Gate Resistance 5 Switching Energy (mJ)
VDS=400V ID=95A TJ=125C L=100H
4 Switching Energy (mJ)
3
VDS=400V RG=2.5 TJ=125C L=100H
Eon
4 3 2 1 0
Eoff Eon
2 1
Eoff
0 0 20 40 60 80 100 120 140 160 ID, Drain Current (A)
0
5
10
15
20
25
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000
TJ=150C
Operating Frequency vs Drain Current 300 250 Frequency (kHz)
ZVS VDS=400V D=50% RG=2.5 TJ=125C TC=75C
IDR, Reverse Drain Current (A)
200 150 100 50 0 10 20
hard switching ZCS
100
TJ=25C
10
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V)
30 40 50 60 70 ID, Drain Current (A)
80
90
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9.2 Chopper diode typical performance curves
Forw ard Current vs Forw ard Voltage 300 IF, Forward Current (A) 250 200 150 100 50 0 0.0 0.5 1.0 1.5 2.0 2.5 V F, Anode to Cathode Voltage (V)
T J=25C T J=1 25C
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.6 Thermal Impedance (C/W) 0.5 0.4 0.3 0.2 0.1 0 0.00001 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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