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| SGM161 5.3A, 20V,RDS(ON)50m[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOT-89 Description The SGM161 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. Features * Low On-Resistance * Capable Of 2.5V Gate Drive * Reliable And Rugged REF. A B C D E F Applications * Notebook PC * Li-ion Battery Systems * On-Board Power Supplies * Cellular And Portable Phones G Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF. D S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@4.5V Continuous Drain Current, VGS@4.5V Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg 3 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings 20 12 5.3 4.3 10 2 0.01 -55~+150 Unit V V A A A W W / oC o C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Rthj-a Ratings 90 Unit o C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 5 SGM161 Elektronische Bauelemente 5.3A, 20V,RDS(ON)50m[ N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o o Unless otherwise specified) Symbol BVDSS Min. 20 _ Typ. _ Max. _ _ Unit V V/ C V nA uA uA o Test Condition VGS=0V, ID=250uA Reference to 25 C, ID=1mA VDS=VGS, ID=250uA VGS=12V VDS=20V,VGS=0 VDS=16V,VGS=0 VGS=4.5V, ID=2A o BVDS/ Tj VGS(th) IGSS IDSS 0.1 _ _ _ _ _ _ _ 0.5 _ _ _ _ 1.2 100 1 10 50 70 250 _ _ _ _ Static Drain-Source On-Resistance 2 RDS(ON) _ _ m[ VGS=2.5V, ID=2A VGS=1.5V, ID=0.5A ID=5.3A VDS=10V VGS=4.5V Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs _ _ _ 8.7 1.5 3.6 6 14 18.4 2.8 603 144 111 13 nC _ _ _ _ _ _ _ VDD=15V ID=1A nS VGS=10V RG=2[ RD=15 [ _ _ _ _ _ _ pF VGS=0V VDS=15V f=1.0MHz VDS=5V, ID=5.3A _ _ S Source-Drain Diode Parameter Forward On Voltage 2 Symbol VDS Trr Qrr Min. _ _ _ Typ. _ Max. 1.2 _ _ Unit V nS nC Test Condition IS=1.2A, VGS=0V. IS=5A,VGS=0 dl/dt=100A/us Reverse Recovery Time Reverse Recovery Charge 16.8 11 Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse widthO 300us, dutycycleO2%. 3.Surface mounted on 1 inch2 copper pad of FR4 board; 270C/W when mounted on min. copper pad. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 5 SGM161 5.3A, 20V,RDS(ON)50m[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET Characteristics Curve http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 5 SGM161 5.3A, 20V,RDS(ON)50m[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 5 SGM161 5.3A, 20V,RDS(ON)50m[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 5 of 5 |
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