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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors D44H Series DESCRIPTION *Low Saturation Voltage *Fast Switching Speeds *Complement to Type D45H Series APPLICATIONS *Designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators,converters and power amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER D44H8 D44H10,11 VALUE 60 V 80 5 10 20 50 150 -55~150 V A A W UNIT VCEO Collector-Emitter Voltage VEBO IC ICM PC Tj Tstg Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance,Junction to Ambient MAX 2.5 75 UNIT /W /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER D44H10 D44H8,11 CONDITIONS IC= 8A ;IB= 0.8 A MIN D44H Series TYP MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage 1 IC= 8A ;IB= 0.4 A IC= 8A ;IB= 0.8 A VCE=Rated VCEO; VEB= 5V; IC= 0 D44H10 35 IC= 2A ; VCE= 1V D44H8,11 D44H10 60 20 IC= 4A ; VCE= 1V D44H8,11 40 VCB= 10V,f= 0.1MHz IC= 0.5A;VCE= 10V;ftest=20MHz 130 50 1.5 10 100 V VBE(sat) ICES IEBO Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current V A A hFE-1 DC Current Gain hFE-2 DC Current Gain COB fT Output Capacitance Current-Gain--Bandwidth Product pF MHz Switching Times ts tf Storage Time Fall Time 0.5 0.14 s s IC= 5A; IB1= -IB2= 0.5A VCC= 20V isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors D44H Series isc Websitewww.iscsemi.cn |
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