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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3480 DESCRIPTION *High Breakdown Voltage: VCBO= 1500V (Min) *High Switching Speed *High Reliability *Built-in Damper Diode APPLICATIONS *Designed for high definition CRT display horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage ww w VALUE 1500 scs .i UNIT V 800 V 7 V 3.5 A .cn mi e VEBO Emitter-Base Voltage IC Collector Current- Continuous PC Collector Power Dissipation @ TC=25 80 W TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3480 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= 800 V V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 1500 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 8.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 1.5 V ICBO Collector Cutoff Current VCB= 800V; IE= 0 IEBO Emitter Cutoff Current hFE DC Current Gain VECF C-E Diode Forward Voltage fT Current-Gain--Bandwidth Product w w scs .i w IF= 2.5A VEB= 4V; IC= 0 IC= 0.5A; VCE= 5V .cn mi e 40 8 3 10 A 130 mA 2.0 V IC= 0.5A; VCE= 10V MHz isc Websitewww.iscsemi.cn 2 |
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