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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION *With TO-247 package *High voltage ,high speed APPLICATIONS *Switching Regulators *Inverters *Solenoids *Relay Drivers *Motor Controls *Deflection Circuits PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION MJW16018 Fig.1 simplified outline (TO-247) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25 TC=100 CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 10 15 8 12 125 50 150 -55~150 UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case VALUE 1.0 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector outoput capacitance CONDITIONS IC=50mA; IB=0 IC=5A ;IB=2A TC=110 IC=10A ;IB=5A IC=5A ;IB=2A TC=110 VCEV=1500V,VBE(off)=1.5Vdc TC=100 VCE=1500V; RBE=50> TC=100 VEB=6V; IC=0 IC=5A ; VCE=5V IE=0;f=1kHz ; VCB=10V 4 MIN 800 SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(sat) ICEV ICER IEBO hFE COB MJW16018 TYP. MAX UNIT V 1.0 1.5 5.0 1.5 1.5 0.25 1.50 2.5 0.1 V V V mA mA mA 450 pF Switching times resistive load td tr ts tf Delay time Rise time Storage time Fall time IC=5A; IB1= IB2=2.0A VCC=250V ,RB2=3> PW=25s Duty CycleC2% 0.085 0.90 4.5 0.2 0.2 2.0 9.0 0.4 s s s s 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE MJW16018 Fig.2 Outline dimensions 3 |
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