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| CHENMKO ENTERPRISE CO.,LTD SMALL FLAT NPN Epitaxial Transistor VOLTAGE 20 Volts APPLICATION * Power driver and Strobe Flash . 2SD2098PT CURRENT 5 Amperes FEATURE * Small flat package. (SC-62/SOT-89) * Low saturation voltage VCE(sat)=0.25V(Typ.)(IC/IB=4A/0.1A) * High speed switching time: tstg= 1.0uSec (typ.) * PC= 2.0W (mounted on ceramic substrate). * High saturation current capability. 4.6MAX. 1.7MAX. SC-62/SOT-89 1.6MAX. 0.4+0.05 2.5+0.1 +0.08 0.45-0.05 +0.08 0.40-0.05 1.50+0.1 +0.08 0.40-0.05 1.50+0.1 * NPN Cilicon Transistor MARKING * hFE Classification Q: Q98 R: R98 1 1 Base 2 3 CIRCUIT 2 Collector ( Heat Sink ) 3 Emitter 0.8MIN. 4.6MAX. CONSTRUCTION 1 B 2 C 3 E Dimensions in millimeters SC-62/SOT-89 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current DC Peak Collector Current Peak Base Current Total Power Dissipation Storage Temperature Junction Temperature Operating Ambient Temperature TA 25OC; Note 1 CONDITION Open Emitter Open Base Open Collector SYMBOL VCBO VCEO VEBO IC ICM IBM PTOT TSTG TJ TAMB MIN. -55 -55 MAX. 50 20 6 5 10 0.5 2.0 +150 +150 +150 UNITS Volts Volts Volts Amps Amps Amps W o C C C o o Note 1. Transistor mounted on ceramic substrate by 40mmX40mmx0.7mm. 2. Measured at Pulse Width 300 us, Duty Cycle 2%. 2003-10 RATING CHARACTERISTIC CURVES ( 2SD2098PT ) CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) PARAMETERS Collector Cut-off Current Emitter Cut-off Current CONDITION IE=0; VCB=40V IC=0; VEB=5V VCE=2V; Note 1 IC=0.5A SYMBOL ICBO ICEO MIN. TYPE MAX. 0.5 0.5 UNITS uA uA DC Current Gain hFE 120 - 390 Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Capacitance Transition Frequency IC=4A; IB=0.1A IC=4A; IB=0.1A IE=ie=0; VCB=20V; f=1MHz IC=-0.05A; VCE=6.0V; f=100MHz VCEsat VBEsat CC fT - 0.25 1.0 30 150 1.0 2.0 - Volts Volts pF MHz Note : 1. Pulse test: tp 300uSec; 0.02. 2. hFE(2) Classification Q: 120 to 270, R: 180 to 390. RATING CHARACTERISTIC CURVES ( 2SD2098PT ) Fig.1 Grounded emitter propagation characteristics 10 5 Fig.2 Grounded emitter output characteristics 5 50mA 45mA Ta=25oC 30mA 25mA 20mA 15mA 5000 2000 DC CURRENT GAIN : hFE Fig.3 DC current gain vs. collector current ( I ) Ta=25oC VCE = 2V Ta=100oC 25oC -25oC COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : Ic (A) 2 1 0.5 0.2 0.1 0.05 0.02 0.01 5m 2m 1m 0 4 1000 500 200 100 50 20 10 VCE=5V 2V 1V 3 40mA 35mA 10mA 2 5mA 1 IB 0mA 1.6 2.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0 0.4 0.8 1.2 5 1m 2m 5m 0.010.02 0.050.1 0.2 0.5 1 2 COLLECTOR CURRENT : IC (A) 5 10 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.4 DC current gain vs. collector current ( II ) 5000 2000 DC CURRENT GAIN : hFE Fig.5 DC current gain vs. collector current ( III ) 5000 2000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Fig.6 Collector-emitter saturation voltage vs. collector current ( I ) 2 1 0.5 Ta=25oC VCE = 1V CE Ta=100oC 25oC -25oC VCE=2V Ta=100oC 25oC -25oC DC CURRENT GAIN : hFE 1000 500 200 100 50 20 10 1000 500 200 100 50 20 10 0.2 0.1 0.05 0.02 IC/IB=50 40 30 10 5 1m 2m 5m 0.01 0.020.05 0.10.2 0.5 1 2 COLLECTOR CURRENT : IC (A) 5 10 5 1m 2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2 COLLECTOR CURRENT : I (A) 5 10 0.01 2m 5m 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 COLLECTOR CURRENT : IC (A) Fig.7 Collector-emitter saturation voltage vs. collector current ( II ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 2 1 0.5 Ta=100oC 25oC -25oC Fig.8 Collector-emitter saturation voltage vs. collector current ( III ) IC/IB=10 IC/IB=30 Fig.9 Collector-emitter saturation voltage vs. collector current ( IV ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 2 1 0.5 0.2 0.1 0.05 0.02 0.01 2m 5m 0.01 0.02 0.05 0.1 0.2 0.5 1 2 Ta=100oC 25oC -25oC 2 1 0.5 IC/IB=40 0.2 0.1 0.05 0.02 0.2 0.1 0.05 0.02 Ta=100oC 25oC -25oC 0.01 2m 5m 0.01 0.02 0.05 0.1 0.2 0.5 1 2 COLLECTOR CURRENT : IC (A) 5 10 0.01 2m 5m 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 5 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) RATING CHARACTERISTIC CURVES ( 2SD2098PT ) Fig.10 Collector-emitter saturation voltage vs. collector current ( V ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 2 1 0.5 0.2 0.1 0.05 0.02 0.01 2m 5m 0.01 0.02 0.05 0.1 0.2 0.5 1 2 Ta=100oC 25oC -25oC Fig.11 Gain bandwidth product vs. emitter current Fig.12 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) TRANSITION FREQUENCY : fT (MHz) IC/IB=50 1000 500 200 100 50 20 10 5 2 Ta=25OC VCE=6V 1000 500 Ta=25OC f=1MHz IC=0A IE=0A 200 100 50 Cib Cob 20 10 0.1 0.2 5 10 1 -1m -2m -5m -10m -20m -50m -0.1 -0.2 EMITTER CURRENT : IE (A) -0.5 -1 0.5 1 2 5 10 20 50 COLLECTOR CURRENT : IC (A) COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.13 Safe operating area 50 COLLECTOR CURRENT : IC (A) 20 10 5 2 1 500m 200m 100m 50m 20m 10m Pw Ic max (Pulse) =1 Ta=25OC Single pulse Recommended land pattern s m 00 =1 s Pw m =1 s Pw 10m = Pw 00 m s 0.2 0.5 1 COLLECTOR TO EMITTER VOLTAGE : VCE (V) DC 2 5 10 20 50 100 200 500 |
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