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Preliminary Data Sheet September 2003
AGR18090E 90 W, 1.805 GHz--1.880 GHz, LDMOS RF Power Transistor
Introduction
The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multicarrier class AB power amplifier applications. This device is manufactured using advanced LDMOS technology offering state-of-the-art performance and reliability. It is packaged in an industry-standard package and is capable of delivering a typical output power of 90 W, which makes it ideally suited for today's wireless base station RF power amplifier applications. Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR18090EU AGR18090EF Sym Ri JC Ri JC Value 0.75 0.75 Unit C/W C/W
Table 2. Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Drain Current--Continuous Total Dissipation at TC = 25 C: AGR18090EU AGR18090EF Derate Above 25 C: AGR18090EU AGR18090EF Operating Junction Temperature Storage Temperature Range Sym Value VDSS 65 VGS -0.5, 15 ID 8.5 PD PD -- -- TJ 230 230 1.31 1.31 200 Unit Vdc Vdc Adc W W W/C W/C C C
AGR18090EU
AGR18090EF
Figure 1. Available Packages
Features
Typical performance ratings for GSM EDGE (f = 1.840 GHz, POUT = 30 W): -- Modulation spectrum: @ 400 kHz = -63 dBc. @ 600 kHz = -73 dBc. -- Error vector magnitude (EVM) = 1.7%. -- Gain = 15 dB. -- Drain Efficiency = 31%. Typical continuous wave (CW) performance over entire digital communication system (DCS) band: -- P1dB: 90 W typ. -- Power gain: @ P1dB = 14 dB. -- Efficiency @ P1dB = 50% typ. -- Return loss: -10 dB. High-reliability gold-metalization process. Low hot carrier injection (HCI) induced bias drift over 20 years. Internally matched. High gain, efficiency, and linearity. Integrated ESD protection. 90 W minimum output power. Device can withstand 10:1 voltage standing wave ratio (VSWR) at 26 Vdc, 1.840 GHz, 90 W CW output power. Large signal impedance parameters available.
TSTG -65, 150
* Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
Table 3. ESD Rating* AGR18090E HBM MM CDM Minimum (V) 500 50 1500 Class 1B A 4
* Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions must be taken to avoid exposure to ESD and electrical overstress (EOS) during all handling, assembly, and test operations. PEAK Devices Agere employs both a human-body model (HBM) and a charged-device model (CDM) qualification requirement in order to determine ESD-susceptibility limits and protection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used in each of the models, as defined by JEDEC's JESD22-A114 (HBM) and JESD22-C101 (CDM) standards. Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
AGR18090E 90 W, 1.805 GHz--1.880 GHz, LDMOS RF Power Transistor
Preliminary Data Sheet September 2003
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: TC = 30 C. Table 4. dc Characteristics Parameter Off Characteristics 200 Drain-source Breakdown Voltage (VGS = 0, ID = 300 A) Gate-source Leakage Current (VGS = 5 V, VDS = 0 V) Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V) On Characteristics Forward Transconductance (VDS = 10 V, ID = 1 A) Gate Threshold Voltage (VDS = 10 V, ID = 300 A) VGS(TH) VDS(ON) VGS(Q) GFS -- -- -- -- 6.4 3.8 -- 4.8 -- -- -- Vdc S Symbol V(BR)DSS IGSS IDSS Min 65 -- -- Typ -- Max -- Unit Vdc
-- --
3.0 150 9
Adc
Adc
Gate Quiescent Voltage (VDS = 28 V, IDQ = 800 mA) Drain-source On-voltage (VGS = 10 V, ID = 1 A) Table 5. RF Characteristics Parameter Dynamic Characteristics Drain-to-gate Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Drain-to-source Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz)
0.11
Vdc Vdc
Symbol CRSS COSS
Min -- --
Typ 2.1 48
Max -- --
Unit pF pF
Functional Tests (in Supplied Test Fixture) Agere Systems Supplied Test Fixture)1 GL -- -- 14 50 -- -- dB %
Drain Efficiency (VDS = 26 V, POUT = 90 W, IDQ = 800 mA)
Power Gain (VDS = 26 V, POUT = 90 W, IDQ = 800 mA)
EDGE Linearity Characterization (POUT = 30 W, f = 1.840 GHz, VDS = 26 V, IDQ = 800 mA) Modulation spectrum @ 400 kHz Modulation spectrum @ 600 kHz
-- P1dB IRL
Output Power (VDS = 26 V, 1 dB gain compression, IDQ = 800 mA) Input Return Loss Ruggedness (VDS = 26 V, POUT = 90 W, IDQ = 800 mA, VSWR = 10:1, all angles)
--
-63 90
-- --
-73
-- --
--
dBc dBc W
No degradation in output power.
-12
-8
dB
1. Across full DCS band, 1.805 GHz--1.880 GHz.
Preliminary Data Sheet September 2003
AGR18090E 90 W, 1.805 GHz--1.880 GHz, LDMOS RF Power Transistor
Test Circuit Illustrations for AGR18090E
VGG + C6 R2 Z1 RF INPUT C1 C5 Z2 C4 C3 Z3 Z4 Z11 C2 Z5 FB1 R3 R1 Z12 C7 C8 Z6 DUT C9 Z7 C10 Z8 C11 C12 C13 Z10 VDD +
2
1 3
Z9 C14
RF OUTPUT
PINS: 1. DRAIN, 2. SOURCE, 3. GATE
A. Schematic
Parts List: Microstrip line: Z1 0.685 in. x 0.067 in.; Z2 0.280 in. x 0.067 in.: Z3 0.300 in. x 0.265 in.; Z4 0.150 in. x 0.465 in.; Z5 0.275 in. x 1.060 in.; Z6 0.330 in. x 1.130 in.; Z7 0.220 in. x 0.375 in.; Z8 0.300 in. x 0.205 in.; Z9 0.290 in. x 0.067 in.; Z10 0.550 in. x 0.067 in.; Z11 0.545 in. x 0.030 in.; Z12 0.800 in. x 0.050 in. (R) ATC chip capacitors: C1, C14, 12 pF 100B120JW500X; C2, C7, 10 pF 100B100JW500X. (R) Sprague tantalum surface-mount chip capacitors: C6, C13, 22 F, 35 V. (R) Kemet 0603 size chip capacitor: C8, 220 pF; 1206 size chip capacitors: C5, C11, 0.1 F C1206104K5RAC7800; 1812 size chip capacitor: C12, 1.0 F C1812C105K5RACTR. (R) Murata 0805 size chip capacitors: C4, C10. 0.01 F GRM40X7R103K100AL. 1206 size chip resistors: R1 4.7 k, R2 560 k, R3 1.02 k. (R) Vitramon 1206 size chip capacitors: C3, C9, 22000 pF. (R) Fair-rite ferrite bead FB1 2743019447. (R) Taconic ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, r = 3.5.
B. Component Layout Figure 2. AGR18090E Test Circuit
AGR18090E 90 W, 1.805 GHz--1.880 GHz, LDMOS RF Power Transistor
Typical Performance Characteristics
WA R D
U CT
GTH S TO
170
0.0 > WA VELE N
0.49
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8
2.0
3.0
4.0
5.0
10
20
180
0.0
LOA D <
RD TOW A 7 TH S 0.4 -170 EN G V EL WA < -90 -160
0.1
) / Yo (-jB CE
f1 f3
DU
0.48
0.6
-85
AN PT CE US ES
1. 0
0.2
0 -15 -80
6 0.4 4 0.0
IV CT
0.3
IN
-75
R
,O o)
5
0.0
5 0.4
-70
06
0.
0 -65 .5
0.6
-60
1.6
0.7
1.4
0.8
1.2
5
0.9
-5
1.0
0
-5
5
-4
GHz (f) 1.805 (f1) 1.8425 (f2) 1.880 (f3)
ZL ZS (Complex Source Impedance) (Complex Optimum Load Impedance) 1.90 - j2.16 2.05 - j1.27 1.77 - j1.97 2.00 - j1.14 1.69 - j1.82 1.97 - j1.06 GATE (2) ZS DRAIN (1) ZL SOURCE (3)
INPUT MATCH
DUT
OUTPUT MATCH
Figure 3. Series Equivalent Input and Output Impedances
F
0.
32
0.
1.8
18
0 -5 -25
4 .4
0
0.3
0.1
3
2.
0
7
-30
-60
0.3
0.1
4
6
-
35
-70
0.35
0.15
0.36
0.14 -80
-4
0
0.37
0.13
0.4
0.2
-90
0.12
0.38
0.11 -100
0.39
CA P AC I TI
0.1
0.4
-110
VE
RE AC TA N
0.0
0.4 1
9
-12
CE CO M
0
0.0
PO N
0.4
8
2
EN
T
(-j
-1
0.
40
4
Z X/
5.0
-15
4.0
-20
3.
0
1.
0
f1
0.8
0.6
-10
ZS
0.
8
10
ZL
0.49
0.4
20
f3
0.2
50
RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
50
0.6
0.4
Z0 = 4
0.48
IN D
90
0.
-30
0.2 0.3
-4 0
8
10 0.1
-1
0.25 0.2 6 0.24 0.27 0.23 0.25 0.24 0.26 0.23 0.27 REFLECTION COEFFICIEN T IN DEG REES LE OF ANG ISSION COEFFI CIEN T IN TRA N SM D EGR EES
20
L E OF ANG
0.2
0. 19 0. 31
50
-20
0.2 2
0.2 8
0.2 9 0.2 1
0. 07 30 0.
43
AGR18090E 90 W, 1.805 GHz--1.880 GHz, LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
120 60 50 40 EFFICIENCY 30 20 10 0
OUTPUT POWER (POUT) (W)Z
80 60 40 20 0
0
1
2
3
4
5
6
INPUT POWER (PIN) (W)Z
VDD = 26 V, IDQ = 800 mA, f = 1842.5 MHz, CW Measurement Figure 4. Output Power and Efficiency vs. Input Power
17 16
IDQ = 950 mA
IDQ = 1100 mA
Gps, POWER GAIN (dB)Z
15 14 13 12 11 10 9 8 0.1 1.0 10.0 100.0 1000.0 IDQ = 800 mA IDQ = 500 mA IDQ = 650 mA
OUTPUT POWER (POUT) (W)Z
VDD = 26 V, f = 1842.5 MHz, CW Measurement Figure 5. CW Power Gain vs. Output Power
DRAIN EFFICIENCY (%)Z
100
POUT
AGR18090E 90 W, 1.805 GHz--1.880 GHz, LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
16.0 15.5 15.0 14.5 14.0 13.5 13.0 12.5 12.0 11.5 IRL Gps 0 -4 -6 -8 -10 -12 -14 -16 -18 -2
11.0 -20 1750 1770 1790 1810 1830 1850 1870 1890 1910 1930 1950 f, FREQUENCY (MHz)Z
VDD = 26 V, IDQ = 800 mA, PIN = 25 dBm, CW Measurement Figure 6. Wideband Gain and Return Loss
16.5 16.0
Gps, POWER GAIN (dB)Z
IDQ = 1100 mA IDQ = 950 mA IDQ = 800 mA IDQ = 650 mA IDQ = 500 mA
15.5 15.0 14.5 14.0 13.5 13.0 12.5 12.0 1.0
10.0 OUTPUT POWER (POUT) (WPEP)Z
100.0
VDD = 26 V, fc = 1842.5 MHz, Two Tone Measurement, 100 kHz Spacing Figure 7. Two Tone Power Gain vs. Output Power
IRL, INPUT RETURN LOSS (dB)Z
Gps, POWER GAIN (dB)Z
AGR18090E 90 W, 1.805 GHz--1.880 GHz, LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
-20.0
THIRD ORDER INTERMODULATIONZ DISTORTION (IMD3) (dBc)Z
-25.0 -30.0 -35.0 -40.0 -45.0 -50.0 -55.0 -60.0 1.0 IDQ = 500 mA IDQ = 650 mA IDQ = 1100 mA IDQ = 950 mA IDQ = 800 mA
10.0 OUTPUT POWER (POUT) (WPEP)Z
100.0
VDD = 26 V, fc = 1842.5 MHz, Two Tone Measurement, 100 kHz Spacing Figure 8. Intermodulation Distortion vs. Output Power
Gps, POWER GAIN (dB) DRAIN EFFICIENCY (%)Z
45 40 35 30 25 20 15 10 5 0 1.0 10.0 600 kHz Gps 400 kHz EFFICIENCY
0
SPECTRAL REGROWTH (dBc)Z
-10 -20 -30 -40 -50 -60 -70 -80 -90 100.0
OUTPUT POWER (POUT) (W)Z
VDD = 26 V, IDQ = 800 mA, fc = 1842.5 MHz, EDGE Modulation
Figure 9. Power Gain, Efficiency, and Spectral Regrowth vs. Output Power
AGR18090E 90 W, 1.805 GHz--1.880 GHz, LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
Gps, POWER GAIN (dB) DRAIN EEFICIENCY (%) ERROR VECTOR MAGNITUDE (EVM)
45 40 35 30 25 20 15 10 5 0 1.0 10.0 EVM Gps EFFICIENCY 9 8 7 6 5 4 3 2 1 0 100.0
OUTPUT POWER (POUT) (W)
VDD = 26 V, IDQ = 800 mA, fc = 1842.5 MHz, EDGE Modulation Figure 10. Power Gain, Efficiency, and EVM vs. Output Power
AGR18090E 90 W, 1.805 GHz--1.880 GHz, LDMOS RF Power Transistor
Package Dimensions
All dimensions are in inches. Tolerances are 0.005 in. unless specified.
AGR18090EU
PINS: 1. DRAIN 2. GATE 3. SOURCE
1
AGR18090U AGR18090U M-AGR21090U YYWWLL XXXXX YYWWLL ZZZZZZZ ZZZZZZZ PEAK DEVICES
1 3
3 2
2
AGR18090EF
PINS: 1. DRAIN 2. GATE 3. SOURCE
1
PEAK DEVICES AGR18090F M-AGR21090F AGR18090F YYWWLL XXXXX YYWWLL ZZZZZZZ ZZZZZZZ
1 3 2
3
2
Label Notes: M before the part number denotes model program. X before the part number denotes engineering prototype.
YYWWLL is the date code including place of manufacture: year year work week (YYWW), LL = location (AL = Allentown, PA; BK = Bangkok, Thailand). XXXXX = five-digit wafer lot number. ZZZZZZZ = seven-digit assembly lot number on production parts. ZZZZZZZZZZZZ = 12-digit (five-digit lot, two-digit wafer, and five-digit serial number) on models and engineering prototypes.

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