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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2238 2SC2238A 2SC2238B DESCRIPTION With TO-220 package Complement to type 2SA968 High breakdown votage APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL PARAMETER VCBO CHA IN Emitter-base voltage Collector current Emitter current Collector-base voltage GE S N 2SC2238A 2SC2238B 2SC2238 2SC2238A 2SC2238B 2SC2238 EMIC Open emitter Open base CONDITIONS OND TOR UC VALUE 160 180 200 160 180 200 UNIT V VCEO Collector-emitter voltage V VEBO IC IE PT Tj Tstg Open collector 5 1.5 -1.5 V A A W ae ae Total power dissipation Junction temperature Storage temperature TC=25ae 25 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2SC2238 V(BR)CEO Collector-emitter breakdown voltage 2SC2238A 2SC2238B V(BR)EBO VCEsat VBE ICBO IEBO hFE Cob fT Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current 2SC2238 2SC2238A 2SC2238B SYMBOL CONDITIONS MIN 160 TYP. MAX UNIT IC=10mA; IB=0 180 200 V IE=1mA; IC=0 IC=500A; IB=50mA IC=500mA ; VCE=5V VCB=160V ;IE=0 VEB=5V; IC=0 IC=100mA ; VCE=5V 5 1.5 1.0 1.0 1.0 |I |I V V V A A DC current gain Output capacitance Transition frequency hFE Classifications O 70-140 Y HAN INC 120-240 SEM GE IE=0 ; VCB=10V,f=1MHz OND IC 70 TOR UC 240 25 100 pF MHz IC=100mA ; VCE=10V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2238 2SC2238A 2SC2238B SEM GE HAN INC OND IC 0.10 mm) TOR UC Fig.2 Outline dimensions(unindicated tolerance:A 3 |
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