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 HTX6-600
Symbol
2.T2
HTX6-600
600V 6A TRIAC
VDRM
= 600 V
3.Gate 1.T1
IT(RMS) = 6.0A
1.T1 2. T2 3. Gate
FEATURES
Repetitive Peak Off-State Voltage: 600V R.M.S On-state Current (IT(RMS)=6A) High Commutation dv/dt
HTP6-600 HTS6-600
General Description
The TRIAC HTX6-600 is suitable for AC switching application, phase control application such as heater control, motor control, lighting control, and static switching relay.
Absolute Maxim um Ratings
Symbol VDRM IT(RMS)
(Ta=25 )
Parameter Repetitive Peak Off-State Voltage R.M.S On-State Current (Ta = 98 ) R.M.S On-State Current (Tc = 94 ) HTP6-600
Value 600 6 HTS6-600 50Hz 60Hz 60 66 10 2 HTP6-600 3 5 1500 -40 to +125 -40 to +125
Units V A A
ITSM V GM IGM PGM VISO TSTG Tj
Surge On-State Current (One Cycle, 50/60Hz, Peak, Non Repetitive) Peak Gate V oltage Peak Gate Current Peak Gate Power Dissipation
V A W W V
HTS6-600 Isolation Breakdown Boltate, AC RMS 1Min Storage Temperature Range Operating Temperature (HTS6-600 only)
SEMIHOW REV.1.0 Jan 2006
HTX6-600
Electrical Characteristics
Symbol IGT V GT VGD (dv/dt)c Parameter Gate Trigger Current Gate Trigger Voltage
(Ta=25)
Test Conditions VD=6V RL=10 , VD=6V RL=10 , 1+, 1-, 31+, 1-, 3-
M in
Typ
M ax 20 1.5
Units mA V V
Non Trigger Gate Tj =125 VD=1/2VDRM , Voltage Critical Rate of Rise of , Tj =125 VD=2/3VDRM Off-State Voltage at (di/dt)c=-3A/ms Communication Holding Current Repetitive Peak OffState Current VD=VDRM, Single Phase, Half W ave, Tj=125
0.2
5.0
V/uS
IH IDRM V TM
10 1.0 1.5
mA mA V
Peak On-State V oltage IT=6A, Inst, Measurement
Thermal Characteristics
Symbol Parameter Test Conditions Case HTP6-600 RTH(J-C) Thermal Resistance Junction to Case HTS6-600 3.8 /W M in Typ M ax 2.8 Units /W
SEMIHOW REV.1.0 Jan 2006
HTX6-600
Performance Curves
Fig 1. Gate Characteristics
102
Fig 2.On-State Voltage
Gate Voltage (V)
On-state Current (A)
101
101
100
100
10-1 101 102 103 0.5
1.0
1.5
2.0
2.5
3.0
3.5
Gate Current (mA)
On-state Voltage (V)
Fig 3. Gate Trigger Voltage vs. Junction Temperature
10 10 9
Fig 4. On State Current vs. Maximum Power Dissipation
Power Dissipation (W)
8 7 6 5 4 3 2 1
VGT (t) VGT (25)
1
0.1 -50 0 50 100 150
0 0 1 2 3 4 5 6 7 8
Junction Temperature ()
RMS On-State Current (A)
Fig 5. On State Current vs. Allowable Case Temperature
130 80
Fig 6. Surge On-State Current Rating (Non-Repetitive)
Surge On-State Current (A)
70 60 50 40 30 20 10 0 100
Allowable Case Temp ()
120
110
100
90 0 1 2 3 4 5 6 7 8
101
102
RMS On-State Current (A)
Time (Cycles)
SEMIHOW REV.1.0 Jan 2006
HTX6-600
Fig 7. Gate Trigger Current vs. Junction Temperature
10 10
Fig8. Transient Thermal Impedance
1
Transient Thermal Impedance (/W)
VGT (t) VGT (25)
1
0.1 -50 0 50 100 150 10-2 10-1 100
101
102
Junction Temperature ()
Time (Sec)
Fig 7. Gate Trigger Characteristics Test Circuit
10
10
A 6V V
RG
A 6V V
RG
Test Procedure I
Test Procedure II
10
A 6V V
RG
Test Procedure III
SEMIHOW REV.1.0 Jan 2006
HTX6-600
Package Dimension
HTP6-600 (TO-220)
SEMIHOW REV.1.0 Jan 2006
HTX6-600
Package Dimensions
HTS6-600 (TO-220F)
Dimensions in Millimeters
SEMIHOW REV.1.0 Jan 2006


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