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HTX6-600 Symbol 2.T2 HTX6-600 600V 6A TRIAC VDRM = 600 V 3.Gate 1.T1 IT(RMS) = 6.0A 1.T1 2. T2 3. Gate FEATURES Repetitive Peak Off-State Voltage: 600V R.M.S On-state Current (IT(RMS)=6A) High Commutation dv/dt HTP6-600 HTS6-600 General Description The TRIAC HTX6-600 is suitable for AC switching application, phase control application such as heater control, motor control, lighting control, and static switching relay. Absolute Maxim um Ratings Symbol VDRM IT(RMS) (Ta=25 ) Parameter Repetitive Peak Off-State Voltage R.M.S On-State Current (Ta = 98 ) R.M.S On-State Current (Tc = 94 ) HTP6-600 Value 600 6 HTS6-600 50Hz 60Hz 60 66 10 2 HTP6-600 3 5 1500 -40 to +125 -40 to +125 Units V A A ITSM V GM IGM PGM VISO TSTG Tj Surge On-State Current (One Cycle, 50/60Hz, Peak, Non Repetitive) Peak Gate V oltage Peak Gate Current Peak Gate Power Dissipation V A W W V HTS6-600 Isolation Breakdown Boltate, AC RMS 1Min Storage Temperature Range Operating Temperature (HTS6-600 only) SEMIHOW REV.1.0 Jan 2006 HTX6-600 Electrical Characteristics Symbol IGT V GT VGD (dv/dt)c Parameter Gate Trigger Current Gate Trigger Voltage (Ta=25) Test Conditions VD=6V RL=10 , VD=6V RL=10 , 1+, 1-, 31+, 1-, 3- M in Typ M ax 20 1.5 Units mA V V Non Trigger Gate Tj =125 VD=1/2VDRM , Voltage Critical Rate of Rise of , Tj =125 VD=2/3VDRM Off-State Voltage at (di/dt)c=-3A/ms Communication Holding Current Repetitive Peak OffState Current VD=VDRM, Single Phase, Half W ave, Tj=125 0.2 5.0 V/uS IH IDRM V TM 10 1.0 1.5 mA mA V Peak On-State V oltage IT=6A, Inst, Measurement Thermal Characteristics Symbol Parameter Test Conditions Case HTP6-600 RTH(J-C) Thermal Resistance Junction to Case HTS6-600 3.8 /W M in Typ M ax 2.8 Units /W SEMIHOW REV.1.0 Jan 2006 HTX6-600 Performance Curves Fig 1. Gate Characteristics 102 Fig 2.On-State Voltage Gate Voltage (V) On-state Current (A) 101 101 100 100 10-1 101 102 103 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Gate Current (mA) On-state Voltage (V) Fig 3. Gate Trigger Voltage vs. Junction Temperature 10 10 9 Fig 4. On State Current vs. Maximum Power Dissipation Power Dissipation (W) 8 7 6 5 4 3 2 1 VGT (t) VGT (25) 1 0.1 -50 0 50 100 150 0 0 1 2 3 4 5 6 7 8 Junction Temperature () RMS On-State Current (A) Fig 5. On State Current vs. Allowable Case Temperature 130 80 Fig 6. Surge On-State Current Rating (Non-Repetitive) Surge On-State Current (A) 70 60 50 40 30 20 10 0 100 Allowable Case Temp () 120 110 100 90 0 1 2 3 4 5 6 7 8 101 102 RMS On-State Current (A) Time (Cycles) SEMIHOW REV.1.0 Jan 2006 HTX6-600 Fig 7. Gate Trigger Current vs. Junction Temperature 10 10 Fig8. Transient Thermal Impedance 1 Transient Thermal Impedance (/W) VGT (t) VGT (25) 1 0.1 -50 0 50 100 150 10-2 10-1 100 101 102 Junction Temperature () Time (Sec) Fig 7. Gate Trigger Characteristics Test Circuit 10 10 A 6V V RG A 6V V RG Test Procedure I Test Procedure II 10 A 6V V RG Test Procedure III SEMIHOW REV.1.0 Jan 2006 HTX6-600 Package Dimension HTP6-600 (TO-220) SEMIHOW REV.1.0 Jan 2006 HTX6-600 Package Dimensions HTS6-600 (TO-220F) Dimensions in Millimeters SEMIHOW REV.1.0 Jan 2006 |
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