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Datasheet File OCR Text: |
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1707 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V(Min) *Good Linearity of hFE *Low Collector Saturation Voltage: VCE(sat)= 0.5V(Max.)@ IC= 8A *Complement to Type 2SB1156 APPLICATIONS *Designed for power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE 130 V 80 V 7 V 20 A 30 A 100 W UNIT .cn mi e IC Collector Current-Continuous ICP Collector Current-Pulse Collector Power Dissipation @ TC=25 PC Collector Power Dissipation @ Ta=25 TJ Junction Temperature 3 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 ICBO IEBO hFE-1 hFE-2 hFE-3 fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base -Emitter Saturation Voltage Base -Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain CONDITIONS IC= 10mA; IB= 0 IC= 8A; IB= 0.4A B 2SD1707 MIN 80 TYP. MAX UNIT V 0.5 1.5 1.5 2.5 V V V V A A IC= 20A; IB= 2A IC= 8A; IB= 0.4A B IC= 20A; IB= 2A VCB= 100V; IE= 0 Current-Gain--Bandwidth Product w w w. sem isc VEB= 5V; IC= 0 IC= 0.1A; VCE= 2V IC= 3A; VCE= 2V IC= 10A; VCE= 2V IC= 0.5A; VCE= 10V IC= 8A, IB1= -IB2= 0.8A .cn i 45 60 30 20 0.5 2.0 0.2 10 50 260 MHz Switching Times ton tstg tf Turn-on Time Storage Time Fall Time s s s hFE-2Classifications R 60-120 Q 90-180 P 130-260 isc Websitewww.iscsemi.cn 2 |
Price & Availability of 2SD1707
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