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Preliminary Technical Information
GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode
High Speed PT IGBT for 40 - 100kHz Switching
IXGH48N60C3C1
VCES IC110 VCE(sat) tfi(typ)
= = =
600V 48A 2.5V 38ns
TO-247 Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC Weight 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 Seconds Mounting Torque Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGE = 1M Continuous Transient TC = 25C (Limited by Leads) TC = 110C TC = 110C TC = 25C, 1ms TC = 25C TC = 25C VGE = 15V, TVJ = 125C, RG = 3 Clamped Inductive Load TC = 25C Maximum Ratings 600 600 20 30 75 48 20 250 30 300 ICM = 100 @ < VCES 300 -55 ... +150 150 -55 ... +150 300 260 1.13/10 6 W C C C C C Nm/lb.in g Applications High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts Advantages High Power Density Low Gate Drive Requirement V V V V A A A A A mJ A Features Optimized for Low Switching Losses Square RBSOA Anti-Parallel Schottky Diode Fast Switching Avalanche Rated International Standard Package G = Gate E = Emitter C = Collector
TAB = Collector
G
C
E
( TAB )
Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VGE(th) ICES IGES VCE(sat) IC = 250A, VCE = VGE TJ = 125C VCE = VCES, VGE = 0V VCE = 0V, VGE = 20V IC = 30A, VGE = 15V, Note 1 TJ = 125C
Characteristic Values Min. Typ. Max. 3.0 5.5 V 50 A 1.75 mA 100 2.3 1.8 2.5 nA V V
(c) 2009 IXYS CORPORATION, All Rights Reserved
DS100139A(06/09)
IXGH48N60C3C1
Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Cies Coes Cres Qg Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCS Inductive Load, TJ = 125C IC = 30A, VGE = 15V VCE = 400V, RG = 3 Note 2 Inductive Load, TJ = 25C IC = 30A, VGE = 15V VCE = 400V, RG = 3 Note 2 IC = 30A, VGE = 15V, VCE = 0.5 * VCES IC = 30A, VCE = 10V, Note 1 Characteristic Values Min. Typ. Max. 20 30 2120 420 50 77 16 32 19 25 0.33 60 38 0.23 19 28 0.37 92 95 0.57 0.21 0.42 100 S pF pF pF nC nC nC ns ns mJ ns ns mJ ns ns mJ ns ns mJ 0.42 C/W C/W
Dim.
e
TO-247 AD Outline
VCE = 25V, VGE = 0V, f = 1MHz
P
Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216
Reverse Diode (SiC) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VF RthJC IF = 20A, VGE = 0V, Note 1 TJ = 125C Characteristic Values Min. Typ. Max. 1.65 1.80 2.10 V V
0.90 C/W
Notes
1. Pulse test, t 300s, duty c ycle, d 2%. 2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2
IXGH48N60C3C1
Fig. 1. Output Characteristics @ 25C
60 VGE = 15V 13V 11V 300 VGE = 15V
Fig. 2. Extended Output Characteristics @ 25C
50
250
IC - Amperes
30
9V
IC - Amperes
40
200
13V
150
11V
20
100 9V
10 7V 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
50 7V 0 0 2 4 6 8 10 12 14 16 18 20
VCE - Volts
VCE - Volts
Fig. 3. Output Characteristics @ 125C
60 VGE = 15V 13V 11V 1.2 1.1
Fig. 4. Dependence of VCE(sat) on Junction Temperature
VGE = 15V I
C
50
= 60A
40
9V 30
VCE(sat) - Normalized
1.0 0.9 0.8 0.7 0.6 0.5 I
IC - Amperes
C
= 30A
20 7V 10
I
C
= 15A
0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
25
50
75
100
125
150
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage
5.0 TJ = 25C 100 90 80 70
Fig. 6. Input Admittance
4.5
4.0
IC - Amperes
VCE - Volts
I 3.5
C
= 60A 30A 15A
60 50 40 30 20 10 TJ = 125C 25C - 40C
3.0
2.5
2.0 7 8 9 10 11 12 13 14 15
0 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0
VGE - Volts
VGE - Volts
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXGH48N60C3C1
Fig. 7. Transconductance
50 45 40 35 25C 125C 12 TJ = - 40C 14 16 VCE = 300V I C = 30A I G = 10 mA
Fig. 8. Gate Charge
g f s - Siemens
30 25 20 15
VGE - Volts
10 8 6 4
10 5 0 0 10 20 30 40 50 60 70 80 90 100 110 120 2 0 0 10 20 30 40 50 60 70 80
IC - Amperes
QG - NanoCoulombs
Fig. 9. Capacitance
10,000 110
Fig. 10. Reverse-Bias Safe Operating Area
100
f = 1 MHz
Cies
90 80
Capacitance - PicoFarads
IC - Amperes
1,000
70 60 50 40 30 TJ = 125C RG = 3 dV / dt < 10V / ns
Coes 100
Cres 10 0 5 10 15 20 25 30 35 40
20 10 0 200
250
300
350
400
450
500
550
600
650
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1.00
Z (th)JC - C / W
0.10
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions.
IXYS REF: G_48N60C3C1(5D)6-04-09
IXGH48N60C3C1
Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance
2.4 Eoff 2.0 VCE = 400V Eon 2.4 1.8 1.6 2.0 1.4 Eoff VCE = 400V
Fig. 13. Inductive Switching Energy Loss vs. Collector Current
Eon
1.8 1.6 1.4 1.2 1.0 0.8
---
----
TJ = 125C , VGE = 15V
RG = 3 , VGE = 15V
Eoff - MilliJoules
Eoff - MilliJoules
1.6 I
C
1.6 = 60A 1.2
1.2 1.0 0.8 0.6 0.4 TJ = 125C TJ = 25C
Eon - MilliJoules
E on - MilliJoules
1.2
0.8
0.8
0.6 0.4 0.2 0.0
0.4 I C = 30A 0.0 0 5 10 15 20 25 30 35
0.4 0.2 0.0 0.0 15 20 25 30 35 40 45 50 55 60
RG - Ohms
IC - Amperes
Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature
2.0 1.8 1.6 Eoff VCE = 400V Eon 2.0 140 1.8 1.6 1.4 130
Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance
350
----
tfi
VCE = 400V
td(off) - - - -
RG = 3 , VGE = 15V
TJ = 125C, VGE = 15V
300
t d(off) - Nanoseconds
t f i - Nanoseconds
Eoff - MilliJoules
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 25
120
250
E
on 1.2 I C = 60A 1.0 0.8 0.6 0.4 I C = 30A 0.2 0.0 125
- MilliJoules
110 I
C
200 = 60A I
C
100
= 30A
150
90
100
80 0 5 10 15 20 25 30 35
50
35
45
55
65
75
85
95
105
115
TJ - Degrees Centigrade
RG - Ohms
Fig. 16. Inductive Turn-off Switching Times vs. Collector Current
160 140 120 100 80 60 40 TJ = 25C 20 15 20 25 30 35 40 45 50 55 60 50 20 25 TJ = 125C 120 160 140
Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature
120
tfi
VCE = 400V
td(off) - - - -
RG = 3 , VGE = 15V
110
tf i
VCE = 400V
td(off) - - - -
110
RG = 3 , VGE = 15V
t d(off) - Nanoseconds
t d(off) - Nanoseconds
t f i - Nanoseconds
t f i - Nanoseconds
100 90 80 70 60
120 100 80 60 40
100 I = 60A 90 80 I
C
C
= 30A
70 60 50 125
35
45
55
65
75
85
95
105
115
IC - Amperes
TJ - Degrees Centigrade
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXGH48N60C3C1
Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance
140 120 100 80 60 40 20 0 0 5 10 15 20 25 30 35 I C = 60A 80 120
Fig. 19. Inductive Turn-on Switching Times vs. Collector Current
27
tr i
VCE = 400V
td(on) - - - -
70 60 50 40 30 20 10
TJ = 125C, VGE = 15V
100
tr i
VCE = 400V
td(on) - - - TJ = 25C, 125C
RG = 3 , VGE = 15V
25
t d(on) - Nanoseconds
t d(on) - Nanoseconds
t r i - Nanoseconds
t r i - Nanoseconds
80
23
60
21
40
19
I
C
= 30A
20
17
0 15 20 25 30 35 40 45 50 55 60
15
RG - Ohms
IC - Amperes
Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature
100 90 80 26 50
Fig. 21. Forward Current vs. Forward Voltage
tr i
VCE = 400V
td(on) - - - -
25 24 40 TJ = 25C TJ = 125C
RG = 3 , VGE = 15V
t d(on) - Nanoseconds
t r i - Nanoseconds
70 60 50 40 30 20 10 25 35 45 55 65 75 85 95 105 115 I
C = 30A
23 I C = 60A 22 21 20 19 18 17 125
IF - Amperes
30
20
10
0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
TJ - Degrees Centigrade
VF - Volts
Fig. 22. Maximum Transient Thermal Impedance for Diode
1.00
Z (th)JC - C / W
0.10
0.01
0.00 0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions.
IXYS REF: G_48N60C3C1(5D)6-04-09

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