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| SSM9987GM N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D2 Low Gate Charge Single Drive Requirement Surface Mount Package D1 D1 D2 BVDSS RDS(ON) G2 S2 80V 90m 3.5A ID DESCRIPTION SO-8 S1 G1 The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness. G1 D1 D2 G2 S1 S2 Pb-free; RoHS-compliant ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V Pulsed Drain Current 1 3 3 Rating 80 25 3.5 2.8 30 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range THERMAL DATA Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit /W 05/31/2007 Rev.1.00 www.SiliconStandard.com 1 SSM9987GM ELECTRICAL CHARACTERISTICS @Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA 2 Min. 80 1 - Typ. 0.08 7 11 3 5 8 4 24 5 980 70 50 1.2 Max. Units 90 105 3 1 25 100 18 1570 1.8 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=3A VGS=4.5V, ID=1A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70oC) VDS=VGS, ID=250uA VDS=10V, ID=3A VDS=80V, VGS=0V VDS=64V ,VGS=0V VGS=25V ID=3A VDS=64V VGS=4.5V VDS=40V ID=1A RG=3.3,VGS=10V RD=40 VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions IS=1.6A, VGS=0V IS=3A, VGS=0V, dI/dt=100A/s Min. - Typ. 30 40 Max. Units 1.2 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 135/W when mounted on min. copper pad. 05/31/2007 Rev.1.00 www.SiliconStandard.com 2 SSM9987GM 30 30 T A =25 o C 25 ID , Drain Current (A) 20 ID , Drain Current (A) 10V 7.0V 5.0V 4.5V 25 T A =150 C o 10V 7.0V 5.0V 4.5V 20 15 15 10 V G =3.0V 10 V G =3.0V 5 5 0 0 3 6 9 12 0 0 3 6 9 12 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 180 2.3 I D =1A 150 RDS(ON) (m) 120 Normalized RDS(ON) T A =25 C o 1.8 ID=3A V G =10V 1.3 90 0.8 60 2 4 6 8 10 0.3 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.5 4 IS(A) T j =150 C 2 o T j =25 C o Normalized VGS(th) (V) 3 1.2 0.9 1 0.6 0 0.3 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode 05/31/2007 Rev.1.00 Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 www.SiliconStandard.com SSM9987GM f=1.0MHz 15 10000 I D =3A VGS , Gate to Source Voltage (V) 12 V DS =64V V DS =50V V DS =40V C (pF) 1000 C iss 9 6 100 3 C oss C rss 0 0 10 20 30 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Duty factor=0.5 Normalized Thermal Response (R thja) 10 0.2 100us 1ms ID (A) 1 0.1 0.1 0.05 PDM 0.02 0.01 10ms 100ms 0.1 t T 0.01 Single Pulse T A =25 C Single Pulse o Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 135/W 1s DC 10 100 1000 0.01 0.1 1 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 30 V DS =5V VG QG ID , Drain Current (A) 20 T j =25 o C T j =150 o C 4.5V QGS QGD 10 Charge 0 0 2 4 6 Q V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics 05/31/2007 Rev.1.00 Fig 12. Gate Charge Waveform 4 www.SiliconStandard.com SSM9987GM Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. 05/31/2007 Rev.1.00 www.SiliconStandard.com 5 |
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