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| SKM200GAL12E4 Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 800 V VGE 15 V VCES 1200 V VGES tpsc Tj Inverse diode IF SKM200GAL12E4 Conditions Values 1200 Unit V A A A A V s C A A A A A C A A A A A C A C V Tj = 175 C Tc = 25 C Tc = 80 C 314 242 200 600 -20 ... 20 SEMITRANS(R)3 IGBT4 Modules Tj = 150 C 10 -40 ... 175 Tj = 175 C Tc = 25 C Tc = 80 C 229 172 200 600 990 -40 ... 175 IFnom Features * IGBT4 = 4. Generation (Trench)IGBT * VCEsat with positive temperature coefficient * High short circuit capability, self limiting to 6 x ICNOM * Soft switching 4. Generation CAL diode (CAL4) IFRM IFSM Tj IFRM = 3xIFnom tp = 10 ms, sin 180, Tj = 25 C Freewheeling diode IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol AC sinus 50Hz, t = 1 min 500 -40 ... 125 4000 IFRM = 3xIFnom tp = 10 ms, sin 180, Tj = 25 C Tj = 175 C Tc = 25 C Tc = 80 C 229 172 200 600 990 -40 ... 175 Typical Applications * * * * DC/DC - converter Brake chopper Switched reluctance motor DC - Motor Remarks * Case temperature limited to Tc = 125C max, recomm. Top = -40 ... +150C, product rel. results valid for Tj = 150 Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint IC = 200 A VGE = 15 V chiplevel Tj = 25 C Tj = 150 C Tj = 25 C Tj = 150 C VGE = 15 V Tj = 25 C Tj = 150 C 5 Tj = 25 C Tj = 150 C f = 1 MHz f = 1 MHz f = 1 MHz 12.3 0.81 0.69 1130 3.8 1.8 2.2 0.8 0.7 5.0 7.5 5.8 0.1 2.05 2.4 0.9 0.8 5.8 8.0 6.5 0.3 V V V V m m V mA mA nF nF nF nC Conditions min. typ. max. Unit VGE=VCE, IC = 7.6 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 C GAL (c) by SEMIKRON Rev. 0 - 19.02.2009 1 SKM200GAL12E4 Characteristics Symbol td(on) tr Eon td(off) tf Eoff Rth(j-c) Conditions VCC = 600 V IC = 200 A VGE = 15 V RG on = 1 RG off = 1 di/dton = 5500 A/s di/dtoff = 2300 A/s per IGBT Tj = 25 C Tj = 150 C Tj = 25 C Tj = 150 C Tj = 25 C Tj = 150 C IF = 200 A Tj = 150 C di/dtoff = 4450 A/s T = 150 C j VGE = 15 V Tj = 150 C VCC = 600 V per diode Tj = 25 C Tj = 150 C Tj = 25 C Tj = 150 C Tj = 25 C Tj = 150 C IF = 200 A Tj = 150 C di/dtoff = 4450 A/s T = 150 C j VGE = 15 V Tj = 150 C VCC = 600 V per Diode Tj = 150 C Tj = 150 C Tj = 150 C Tj = 150 C Tj = 150 C Tj = 150 C min. typ. 204 40 21 490 107 27 max. Unit ns ns mJ ns ns mJ 0.14 2.2 2.15 1.3 0.9 4.5 6.3 174 33 13 0.26 2.2 2.15 1.3 0.9 4.5 6.3 174 33.1 13 0.26 15 20 2.52 2.47 1.5 1.1 5.1 6.8 2.52 2.47 1.5 1.1 5.1 6.8 K/W V V V V m m A C mJ K/W V V V V m m A C mJ K/W nH m m SEMITRANS 3 IGBT4 Modules SKM200GAL12E4 (R) Inverse diode VF = VEC IF = 200 A VGE = 0 V chip VF0 rF IRRM Qrr Err Rth(j-c) Features * IGBT4 = 4. Generation (Trench)IGBT * VCEsat with positive temperature coefficient * High short circuit capability, self limiting to 6 x ICNOM * Soft switching 4. Generation CAL diode (CAL4) Typical Applications * * * * DC/DC - converter Brake chopper Switched reluctance motor DC - Motor Freewheeling diode VF = VEC IF = 200 A VGE = 0 V chip VF0 rF IRRM Qrr Err Rth(j-c) Module LCE RCC'+EE' Rth(c-s) Ms Mt w terminal-chip per module to heat sink M6 Remarks * Case temperature limited to Tc = 125C max, recomm. Top = -40 ... +150C, product rel. results valid for Tj = 150 TC = 25 C TC = 125 C 3 to terminals M6 2.5 0.25 0.5 0.02 0.038 5 5 325 K/W Nm Nm Nm g GAL 2 Rev. 0 - 19.02.2009 (c) by SEMIKRON SKM200GAL12E4 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic (c) by SEMIKRON Rev. 0 - 19.02.2009 3 SKM200GAL12E4 Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Transient thermal impedance Fig. 10: CAL diode forward characteristic Fig. 11: CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode peak reverse recovery charge 4 Rev. 0 - 19.02.2009 (c) by SEMIKRON SKM200GAL12E4 Semitrans 3 GAL This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. (c) by SEMIKRON Rev. 0 - 19.02.2009 5 |
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