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 Shantou Huashan Electronic Devices Co.,Ltd.
HCR100 Series
Sensitive Gate Silicon Controlled Rectifiers
Features
* Repetitive Peak Off-State Voltage : 400V thru 600V * R.M.S On-State Current(IT(RMS)=0.8A) * Low On-State Voltage (1.2V(Typ.)@ ITM)
General Description
PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in an inexpensive plastic TO-92 package which is readily adaptable for use in automatic insertion equipment.
Absolute Maximum Ratings Ta=25ae
Tstg Tj VDRM (c) IT RMS IT(AV) ITSM I t PGM PG(AV) IFGM VRGM
2
unless otherwise specified(c)
Storage Temperature ------------------------------------------------------ -40~125ae Operating Junction Temperature ---------------------------------------------- -40~125ae Repetitive Peak Off-State Voltage MCR100-6 ----------------------------------------------- 400V MCR100-8 -------------------------------------------- 600V R.M.S On-State Current All Condition Angles(c) ------------------------------------------ 0.8A Average On-State Current (Half Sine Wave : TC = 74 C) ------------------------------------ 0.5A Surge On-State Current (1/2 Cycle, 60Hz, Sine Wave, Non-repetitive) ----------------------- 10A Circuit Fusing Considerations(t = 8.3ms) ----------------------------------------------------- 0.415 A2s Forward Peak Gate Power Dissipation (Ta=25ae ) ---------------------------------------------- 0.1W ,t=8.3ms) -------------------------- 0.01W
Forward Average Gate Power Dissipation (Ta=25ae
Forward Peak Gate Current --------------------------------------------------------------------------- 1A Reverse Peak Gate Voltage --------------------------------------------------------------------------- 5V
Shantou Huashan Electronic Devices Co.,Ltd.
HCR100 Series
Electrical Characteristics Ta=25ae , Rgk=1K ohm unless otherwise specified(c)
Symbol IDRM Items Repetitive Peak Off-State Current Peak On-State Voltage (1) Gate Trigger Current 2(c) 1.2 Min. Typ. Max. 10 200 1.7 200 Unit uA V uA V 0.8 1.2 VGD IH Non-Trigger Gate Voltage Holding Current 2 Rth(j-c) Rth(j-a) Thermal Resistance Thermal Resistance 5.0 10 60.0 150 ae ae 1%. mA 0.2 Conditions VAK=VDRM or VRRM Ta=25ae Ta=125ae ITM=1A, Peak VAK =7V, RL=100 ohm VAK =7V, RL=100 ohm Ta=25ae Ta=-40ae VAK =12V, RL=100 ohm Ta=125ae VAK =12V,Gate open, initiating current=50mA Ta=25ae Ta=-40ae Junction to Case Junction to Ambient
VTM IGT VGT
Gate Trigger Voltage (2)
V
/W /W
1. Forward current applied for 1 ms maximum duration,duty cycle U 2. RGK current is not included in measurement
Performance Curves
FIGURE 1 - HCR100-8 CURRENT DERATING (REFERENCE: CASE TEMPERATURE)
Ta, MAXIMUM ALLOWABLE AMBIENT TEMPERATURE (ae )
FIGURE 2 - HCR100-8 CURRENT DERATING (REFERENCE: AMBIENT TEMPERATURE)
Tc, MAX ALLOWABLE CASE TEMPERATURE (ae )
IT(AV), AVERAGE ON-STATE CURRENT (AMP)
IT(AV),
AVERAGE
ON-STATE
CURRENT


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