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Shantou Huashan Electronic Devices Co.,Ltd. HCR100 Series Sensitive Gate Silicon Controlled Rectifiers Features * Repetitive Peak Off-State Voltage : 400V thru 600V * R.M.S On-State Current(IT(RMS)=0.8A) * Low On-State Voltage (1.2V(Typ.)@ ITM) General Description PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in an inexpensive plastic TO-92 package which is readily adaptable for use in automatic insertion equipment. Absolute Maximum Ratings Ta=25ae Tstg Tj VDRM (c) IT RMS IT(AV) ITSM I t PGM PG(AV) IFGM VRGM 2 unless otherwise specified(c) Storage Temperature ------------------------------------------------------ -40~125ae Operating Junction Temperature ---------------------------------------------- -40~125ae Repetitive Peak Off-State Voltage MCR100-6 ----------------------------------------------- 400V MCR100-8 -------------------------------------------- 600V R.M.S On-State Current All Condition Angles(c) ------------------------------------------ 0.8A Average On-State Current (Half Sine Wave : TC = 74 C) ------------------------------------ 0.5A Surge On-State Current (1/2 Cycle, 60Hz, Sine Wave, Non-repetitive) ----------------------- 10A Circuit Fusing Considerations(t = 8.3ms) ----------------------------------------------------- 0.415 A2s Forward Peak Gate Power Dissipation (Ta=25ae ) ---------------------------------------------- 0.1W ,t=8.3ms) -------------------------- 0.01W Forward Average Gate Power Dissipation (Ta=25ae Forward Peak Gate Current --------------------------------------------------------------------------- 1A Reverse Peak Gate Voltage --------------------------------------------------------------------------- 5V Shantou Huashan Electronic Devices Co.,Ltd. HCR100 Series Electrical Characteristics Ta=25ae , Rgk=1K ohm unless otherwise specified(c) Symbol IDRM Items Repetitive Peak Off-State Current Peak On-State Voltage (1) Gate Trigger Current 2(c) 1.2 Min. Typ. Max. 10 200 1.7 200 Unit uA V uA V 0.8 1.2 VGD IH Non-Trigger Gate Voltage Holding Current 2 Rth(j-c) Rth(j-a) Thermal Resistance Thermal Resistance 5.0 10 60.0 150 ae ae 1%. mA 0.2 Conditions VAK=VDRM or VRRM Ta=25ae Ta=125ae ITM=1A, Peak VAK =7V, RL=100 ohm VAK =7V, RL=100 ohm Ta=25ae Ta=-40ae VAK =12V, RL=100 ohm Ta=125ae VAK =12V,Gate open, initiating current=50mA Ta=25ae Ta=-40ae Junction to Case Junction to Ambient VTM IGT VGT Gate Trigger Voltage (2) V /W /W 1. Forward current applied for 1 ms maximum duration,duty cycle U 2. RGK current is not included in measurement Performance Curves FIGURE 1 - HCR100-8 CURRENT DERATING (REFERENCE: CASE TEMPERATURE) Ta, MAXIMUM ALLOWABLE AMBIENT TEMPERATURE (ae ) FIGURE 2 - HCR100-8 CURRENT DERATING (REFERENCE: AMBIENT TEMPERATURE) Tc, MAX ALLOWABLE CASE TEMPERATURE (ae ) IT(AV), AVERAGE ON-STATE CURRENT (AMP) IT(AV), AVERAGE ON-STATE CURRENT |
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