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| CHENMKO ENTERPRISE CO.,LTD CHM456NZPT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. CURRENT 5 Ampere FEATURE * Small flat package. (SC-73/SOT-223) * High density cell design for extremely low RDS(ON). * Rugged and reliable. 6.50+0.20 3.00+0.10 SC-73/SOT-223 1.65+0.15 0.90+0.05 2.0+0.3 CONSTRUCTION * N-Channel Enhancement 0.70+0.10 0.70+0.10 2.30+0.1 3.5+0.2 7.0+0.3 0.9+0.2 2.0+0.3 0.70+0.10 4.60+0.1 0.27+0.05 0.01~0.10 1 1 Gate 3 2 CIRCUIT (1) G D (3) 2 Source 3 Drain ( Heat Sink ) S (2) Dimensions in millimeters SC-73/SOT-223 Absolute Maximum Ratings Symbol Parameter TA = 25C unless otherwise noted CHM456NZPT Units VDSS VGSS Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous 60 V V 20 5.0 ID - Pulsed PD TJ TSTG Maximum Power Dissipation Operating Temperature Range Storage Temperature Range (Note 3) A 20 3000 -55 to 150 -55 to 150 mW C C Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1) 42 C/W 2006-01 RATING CHARACTERISTIC CURVES ( CHM456NZPT ) Electrical Characteristics T Symbol Parameter A = 25C unless otherwise noted Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS I GSSF I GSSR Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Body Leakage VGS = 0 V, ID = 250 A VDS = 55 V, VGS = 0 V VGS = 20V,VDS = 0 V VGS = -20V, VDS = 0 V 60 1 +100 -100 V A nA nA ON CHARACTERISTICS (Note 2) VGS(th) RDS(ON) g FS Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 A VGS=10V, ID=3.8A VGS=5.0V, ID=3.8A 1 36 45 5 3 55 V m 75 S Forward Transconductance VDS =25V, ID = 1.9A SWITCHING CHARACTERISTICS (Note 4) Qg Qgs Q tr toff tf gd Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Time Rise Time Turn-Off Time Fall Time VDS=30V, ID=3.8A VGS=10V V DD= 30V ID = 1A , VGS = 10 V RGEN= 6 19 2.8 3.6 11 8 34 9 24 nC ton 25 18 65 22 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD Drain-Source Diode Forward Current (Note 1) 3.8 1.2 A V Drain-Source Diode Forward Voltage IS = 3.8A , VGS = 0 V (Note 2) |
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