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| SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B KTC9014A EPITAXIAL PLANAR NPN TRANSISTOR C FEATURES : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). Low Noise :NF=1dB(Typ.) at f=1kHz. Complementary to KTC9015A. K D G N E A Excellent hFE Linearity MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg RATING 60 50 5 150 -150 400 150 -55 150 UNIT V L F H F V V mA mA mW M 1 2 3 C DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00 J 1. EMITTER 2. BASE 3. COLLECTOR TO-92 (F) ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Noise Figure Note : hFE Classification A:60 150, B:100 SYMBOL ICBO IEBO hFE (Note) VCE(sat) fT Cob NF 300, ) TEST CONDITION VCB=50V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1mA IC=100mA, IB=10mA VCE=10V, IC=1mA, f=100MHz VCB=10V, IE=0, f=1MHz VCE=6V, IC=0.1mA, Rg=10k C:200 600, D:400 1000 , f=1kHz MIN. 60 60 TYP. 0.1 2.0 1.0 MAX. 50 100 1000 0.25 3.5 10 V MHz pF dB UNIT nA nA 2010. 1. 28 Revision No : 2 1/1 |
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