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| HMC816LP4E v00.1108 SMT GaAs PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz Features Low Noise Figure: 0.5 dB High Gain: 22 dB High Output IP3: +37 dBm Single Supply: +3V to +5V 50 Ohm Matched Input/Output 24 Lead 4x4mm QFN Package: 16 mm2 8 LOW NOISE AMPLIFIERS - SMT Typical Applications The HMC816LP4E is ideal for: * Cellular/3G and LTE/WiMAX/4G * BTS & Infrastructure * Repeaters and Femtocells * Public Safety Radio * Multi-Channel Applications Functional Diagram General Description The HMC816LP4E is a GaAs PHEMT Dual Channel Low Noise Amplifier that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 230 and 660 MHz. The amplifier has been optimized to provide 0.5 dB noise figure, 22 dB gain and +37 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent with minimal external matching and bias decoupling components. The HMC816LP4E shares the same package and pinout with the HMC817LP4E & HMC818LP4E LNAs. The HMC817LP4E can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of each channel of the LNA for each application. Electrical Specifi cations, TA = +25 C, Rbias 1, 2 = 10k Ohms*, Vdd = Vdd1, Vdd2 = +5V, Idd = Idd1, Idd2 Vdd = +3V Parameter Min. Frequency Range Gain Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd) 24 10 10 17 Typ. 230 - 450 21 0.001 0.5 13 12 14 15 26 34 44 24 13 14 0.9 14 Max. Min. Typ. 450 - 660 17 0.002 0.5 17 10 16 16.5 28 34 44 68 15 16 0.9 19 Max. Min. Typ. 230 - 450 22 0.005 0.5 15 13 19 20 34 97 126 68 18 18 0.9 15 Max. Min. Typ. 450 - 660 19 0.007 0.5 16 10 21 21 37 97 126 0.9 Max. MHz dB dB/ C dB dB dB dBm dBm dBm mA Vdd = +5V Units * Rbias sets current, see application circuit herein 8 - 362 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC816LP4E v00.1108 SMT GaAs PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz Broadband Gain & Return Loss 25 20 15 RESPONSE (dB) 10 5 0 -5 -10 -15 -20 S11 S22 Vdd= 5V Vdd= 3V S21 Gain vs. Temperature [1] 24 8 LOW NOISE AMPLIFIERS - SMT 8 - 363 22 GAIN (dB) 20 18 +25C +85C - 40C 16 -25 0.2 0.4 0.6 0.8 1 FREQUENCY (GHz) 1.2 1.4 14 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 FREQUENCY (GHz) 0.6 0.65 0.7 Gain vs. Temperature [2] 24 Input Return Loss vs. Temperature [1] 0 22 RETURN LOSS (dB) -5 +25C +85C - 40C GAIN (dB) 20 -10 18 +25C +85C - 40C -15 16 14 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 FREQUENCY (GHz) 0.6 0.65 0.7 -20 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 FREQUENCY (GHz) 0.6 0.65 0.7 Output Return Loss vs. Temperature [1] 0 Reverse Isolation vs. Temperature [1] 0 -5 REVERSE ISOLATION (dB) RETURN LOSS (dB) -5 +25C +85C - 40C -10 -15 -20 -25 -30 -35 +25C +85C - 40C -10 -15 -20 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 FREQUENCY (GHz) 0.6 0.65 0.7 -40 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 FREQUENCY (GHz) 0.6 0.65 0.7 [1] Vdd = 5V [2] Vdd = 3V For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC816LP4E v00.1108 SMT GaAs PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz 8 LOW NOISE AMPLIFIERS - SMT Noise Figure vs. Temperature [1] 1 P1dB vs. Temperature 24 22 0.8 NOISE FIGURE (dB) +85C 20 0.6 +25 C Vdd=5V P1dB (dBm) 18 16 Vdd=3V 0.4 -40C 14 Vdd=5V Vdd=3V 0.2 12 10 0.2 +25 C +85 C - 40 C 0 0.2 0.3 0.4 0.5 0.6 0.7 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7 FREQUENCY (GHz) FREQUENCY (GHz) Psat vs. Temperature 24 22 Output IP3 vs. Temperature 45 Vdd=5V 40 20 Psat (dBm) 18 16 14 12 10 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 FREQUENCY (GHz) 0.6 0.65 0.7 Vdd=3V Vdd=5V IP3 (dBm) +25 C +85 C - 40 C 35 30 25 Vdd=3V +25 C +85 C - 40 C 20 0.2 0.3 0.4 0.5 0.6 0.7 FREQUENCY (GHz) Output IP3 and Supply Current vs. Supply Voltage @ 400 MHz 38 36 34 IP3 (dBm) 32 30 28 26 24 22 2.7 3.1 3.5 3.9 4.3 4.7 5.1 144 126 108 Output IP3 and Supply Current vs. Supply Voltage @ 500 MHz 43 40 37 IP3 (dBm) 34 31 28 25 22 2.7 3.1 3.5 3.9 4.3 4.7 5.1 140 120 100 80 60 40 20 0 5.5 Idd (mA) 90 Idd (mA) 72 54 36 18 0 5.5 VOLTAGE SUPPLY (V) VOLTAGE SUPPLY (V) [1] Measurement reference plane shown on evaluation PCB drawing. 8 - 364 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC816LP4E v00.1108 SMT GaAs PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz Power Compression @ 400 MHz [1] 45 Pout (dBm), GAIN (dB), PAE (%) Pout Gain PAE Power Compression @ 400 MHz [2] 45 Pout (dBm), GAIN (dB), PAE (%) 40 35 30 25 20 15 10 5 0 Pout Gain PAE 8 LOW NOISE AMPLIFIERS - SMT NOISE FIGURE (dB) 40 35 30 25 20 15 10 5 0 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 -18 -16 -14 -12 -10 -8 -6 -4 -2 INPUT POWER (dBm) INPUT POWER (dBm) Power Compression @ 500 MHz [1] 45 Pout (dBm), GAIN (dB), PAE (%) 40 35 30 25 20 15 10 5 0 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 INPUT POWER (dBm) Pout Gain PAE Power Compression @ 500 MHz [2] 50 Pout (dBm), GAIN (dB), PAE (%) 45 40 35 30 25 20 15 10 5 0 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 INPUT POWER (dBm) Pout Gain PAE Gain, Power & Noise Figure vs. Supply Voltage @ 400 MHz 24 Gain P1dB Gain, Power & Noise Figure vs. Supply Voltage @ 500 MHz 1 24 Gain P1dB 1 GAIN (dB) & P1dB (dBm) 20 0.6 GAIN (dB) & P1dB (dBm) 22 0.8 NOISE FIGURE (dB) 22 0.8 20 0.6 18 0.4 18 0.4 16 Noise Figure 0.2 16 Noise Figure 0.2 14 2.7 3.1 3.5 3.9 4.3 4.7 5.1 0 5.5 14 2.7 3.1 3.5 3.9 4.3 4.7 5.1 0 5.5 SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V) [1] Vdd = 5V [2] Vdd = 3V For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 365 HMC816LP4E v00.1108 SMT GaAs PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz 8 LOW NOISE AMPLIFIERS - SMT Output IP3 vs. Rbias @ 400 MHz 40 38 36 34 IP3 (dBm) 32 30 28 26 24 22 500 Vdd= 3V Vdd= 5V Output IP3 vs. Rbias @ 500 MHz 40 38 36 34 IP3 (dBm) 32 30 28 26 24 22 500 Vdd= 3V Vdd= 5V 1000 Rbias (Ohms) 10000 1000 Rbias (Ohms) 10000 Cross Channel Isolation [1] 0 Magnitude Balance [1] 1 AMPLITUDE BALANCE (dB) 0.7 -10 ISOLATION (dB) RFIN1 TO RFOUT2 RFIN2 TO RFOUT1 0.5 -20 0 -30 -0.5 -40 0.2 0.3 0.4 0.5 0.6 -1 0.2 0.3 0.4 0.5 0.6 0.7 FREQUENCY (GHz) FREQUENCY (GHz) Phase Balance [1] 2 PHASE BALANCE (degrees) Absolute Bias Register for Idd Range & Recommended Bias Resistor Rbias Vdd (V) Min Max Open circuit Recommended 10k 820 34 65 80 90 97 Idd (mA) 1 3V 4.7k 0 5V -1 0 Open circuit 2k 3.92k 10k With Vdd = 3V Rbias <4.7k is not recommended and may result in LNA becoming conditionally unstable. -2 0.2 0.3 0.4 0.5 0.6 0.7 FREQUENCY (GHz) [1] Vdd = 5V 8 - 366 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC816LP4E v00.1108 SMT GaAs PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz Absolute Maximum Ratings Drain Bias Voltage (Vdd1, Vdd2) RF Input Power (RFIN1, RFIN2) (Vdd = +5 Vdc) Channel Temperature Continuous Pdiss (T= 85 C) (derate 17.86 mW/C above 85 C) Thermal Resistance (channel to ground paddle) Storage Temperature Operating Temperature +6 V +10 dBm 150 C 1.16 W 56 C/W -65 to +150 C -40 to +85 C Typical Supply Current vs. Vdd (Rbias = 10k) Vdd1, Vdd2 (V) 2.7 3.0 3.3 4.5 5.0 5.5 Idd1, Idd2 (mA) 24 34 44 82 97 110 8 LOW NOISE AMPLIFIERS - SMT 8 - 367 Note: Amplifi er will operate over full voltage range shown above. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number HMC816LP4E Package Body Material RoHS-compliant Low Stress Injection Molded Plastic Lead Finish 100% matte Sn MSL Rating MSL1 [2] Package Marking [1] H816 XXXX [1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 C For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC816LP4E v00.1108 SMT GaAs PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz 8 LOW NOISE AMPLIFIERS - SMT Pin Descriptions Pin Number 1, 6 2, 5, 7, 12, 14, 17, 19, 24 3, 4, 8 - 10, 21 - 23 Function RFIN1, RFIN2 Description This pins are DC coupled. An off-chip DC blocking capacitor is required. Interface Schematic GND These pins and package bottom must be connected to RF/DC ground. No connection required. These pins may be connected to RF/DC ground without affecting performance. N/C 18, 13 RFOUT1, RFOUT2 These pins are matched to 50 Ohms. 15, 16 RES1, RES2 These pins are used to set the DC current of each amplifier via external bias resistor. See application circuit. 20, 11 Vdd1, Vdd2 Power Supply Voltages for each amplifier. Choke inductor and bypass capacitors are required. See application circuit. Application Circuit 8 - 368 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC816LP4E v00.1108 SMT GaAs PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz Evaluation PCB 8 LOW NOISE AMPLIFIERS - SMT List of Material for Evaluation PCB 123191 [1] Item J1 - J4 J5, J6 C1, C2 C5, C6 C9, C10 C11, C12 R3, R4 R5, R6 (Rbias1,2) L1, L2 L3, L4 U1 PCB [2] Description PCB Mount SMA RF Connector 2mm Vertical Molex 8pos Connector 100 pF Capacitor, 0402 Pkg. 1000 pF Capacitor, 0603 Pkg. 0.47 F Capacitor, 0402 Pkg. 10k pF Capacitor, 0402 Pkg. 0 Ohm Resistor, 0402 Pkg. 10k Ohm Resistor, 0402 Pkg. 51 nH Inductor, 0402 Pkg. 47 nH Inductor, 0603 Pkg. HMC816LP4E Amplifier 122725 Evaluation PCB The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 or Arlon 25FR For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 369 |
Price & Availability of HMC816LP4E
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