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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU204 DESCRIPTION *High Voltage-VCEX= 1300V(Min.) *Collector Current- IC = 2.5A APPLICATIONS *Designed for use in large screen color deflection circuits . ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCEX VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage VALUE 1300 UNIT V Collector Current-Continuous Collector Current-Peak Base Current-Continuous w ww scs .i 600 5 2.5 3.0 1.0 36 115 -65~115 .cn mi e V V A A A W PC TJ Tstg Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 2.5 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BU204 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA, IB= 0 600 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 1A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 1A B 1.5 V ICES Collector Cutoff Current VCE= 1300V; VBE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5.0V ; IC= 0 10 mA hFE DC Current Gain IC= 2A ; VCE= 5V COB Output Capacitance fT Current-Gain--Bandwidth Product tf Fall Time w w scs .i w B IE= 0; VCB= 10V; ftest= 1MHz IC= 0.1A; VCE= 5V; ftest= 1MHz .cn mi e 2 50 pF 4 MHz IC= 2A; IB= 1A; LB= 25H 0.65 s isc Websitewww.iscsemi.cn 2 |
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