View APT100GT120JRDL_4593451.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

1200V
APT100GT120JRDL
Resonant Mode IGBT(R)
The Thunderbolt IGBT(R) used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT(R) offers superior ruggedness and ultrafast switching speed.
Features * Low Conduction Loss * Low Gate Charge * Ultrafast Tail Current shutoff * Low forward Diode Voltage (VF) * Ultrasoft Recovery Diode * SSOA Rated * RoHS Compliant Typical Applications * Induction Heating
ISOTOP (R)
E G C
E
S
OT
22
7
"UL Recognized"
file # E145592
* Welding * Medical * High Power Telecom
G C
* Resonant Mode Phase Shifted Bridge
E
Maximum Ratings Symbol Parameter
VCES VGE IC1 IC2 ICM SSOA PD TJ, TSTG TL Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 100C Pulsed Collector Current
1
All Ratings: TC = 25C unless otherwise specified.
APT100GT120JRDL 1200 20 123 67 200 200A @ 1200V 570 -55 to 150 300 Watts C Amps
Unit
Volts
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Static Electrical Characteristics Symbol Characteristic / Test Conditions
V(BR)CES VGE(TH) VCE(ON) ICES IGES RG(int) Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 5mA) Gate Threshold Voltage (VCE = VGE, IC = 4mA, Tj = 25C) Collector Emitter On Voltage (VGE = 15V, IC = 100A, Tj = 25C) Collector Emitter On Voltage (VGE = 15V, IC = 100A, Tj = 125C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25C) Gate-Emitter Leakage Current (VGE = 20V) Integrated Gate Resistor
2
Min
1200 4.5 2.7 -
Typ
5.5 3.2 4.0 5
Max
6.5 3.7 300 1500 600 -
Unit
Volts
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125C) 2
A nA
052-6351 Rev B 6-2009
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
Dynamic Characteristic
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Switching Safe Operating Area Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-On Switching Energy
4 5
APT100GT120JRDL
Test Conditions VGE = 0V, VCE = 25V f = 1MHz Gate Charge VGE = 15V VCE= 600V IC = 100A TJ = 150C, RG = 1.0 , VGE = 15V, L = 100H, VCE= 1200V Inductive Switching (25C) VCC = 800V VGE = 15V IC = 100A RG = 4.7 TJ = +25C
7
Min 200 -
Typ 6700 6530 4380 10.0 685 75 400
Max -
Unit
pF
V
nC
A 50 100 630 36 TBD 17600 7240 50 100 710 37 TBD 22380 10950 J ns J ns
Turn-Off Switching Energy 6 Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-On Switching Energy Turn-Off Switching Energy
4 5 6
Inductive Switching (125C) VCC = 800V VGE = 15V IC = 100A RG = 4.7 TJ = 125C
-
Thermal and Mechanical Characteristics Symbol Characteristic / Test Conditions
R R
JC JC
Min
2500
Typ
29.2 -
Max
0.22
Unit
C/W
Junction to Case (IGBT) Junction to Case (DIODE) Package Weight RMS Voltage (50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
0.80 g Volts
WT VIsolation
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages. 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to z a the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance not including gate driver impedance.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
052-6351 Rev B 6-2009
Typical Performance Curves
150 125 TJ= 25C 100 TJ= 125C 75 50 25 0 TJ= 150C
V
GE
APT100GT120JRDL
250 15V 13V 12V IC, COLLECTOR CURRENT (A) 200 11V 150 10V 100 9V 50 8V 7V
= 15V
IC, COLLECTOR CURRENT (A)
0 1 2 3 4 5 6 7 8 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25C) VGE, GATE-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
0
0 5 10 15 20 25 30 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 25C)
I = 100A C T = 25C
J
150 125 100 75 50 25 0
16 14 12 10 8 6 4 2 0 0 100 200 300 400 500 600 GATE CHARGE (nC) FIGURE 4, Gate charge 700 VCE = 240V VCE = 600V
IC, COLLECTOR CURRENT (A)
VCE = 960V
TJ= -55C TJ= 25C TJ= 125C 0 10 12 14 4 6 8 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics 2
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
8 7 6 5 4 3 2 1 0
7 6 5 4 3 2 1 0
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
IC = 200A IC = 100A IC = 50A
IC = 200A IC = 100A IC = 50A
9 10 11 12 13 14 15 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage 1.10 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 1.05 1.00 0.95 0.90 0.85 0.80 0.75 -.50 -.25 IC, DC COLLECTOR CURRENT (A)
8
50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 120 100 80 60 40 20 0 50 75 100 125 150 TC, Case Temperature (C) FIGURE 8, DC Collector Current vs Case Temperature 25 052-6351 Rev B 6-2009
0
25
0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE FIGURE 7, Threshold Voltage vs Junction Temperature
Typical Performance Curves
80 td(OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 70 60 50 40 30 20 10 0 0
VCE = 800V TJ = 25C, or 125C RG = 4.7 L = 100H
APT100GT120JRDL
900 800 700 600 500 400 300 200 100 0
VCE = 800V RG = 4.7 L = 100H VGE =15V,TJ=125C VGE =15V,TJ=25C
VGE = 15V
40 80 120 160 200 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 350 300 250 tr, RISE TIME (ns) tr, FALL TIME (ns) 200 150 100 50 0
TJ = 25 or 125C,VGE = 15V RG = 4.7, L = 100H, VCE = 800V
0 40 80 120 160 200 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 120 100 80
TJ = 25C, VGE = 15V RG = 4.7, L = 100H, VCE = 800V
60 40
TJ = 125C, VGE = 15V
20 0
0 40 80 120 160 200 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 80000 EOFF, TURN OFF ENERGY LOSS (J) Eon2, TURN ON ENERGY LOSS (J) 70000 60000 50000 40000 30000 20000 10000 0
TJ = 25C TJ = 125C
V = 800V CE V = +15V GE R = 4.7
G
0 40 80 120 160 200 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 18000 16000 14000 12000 10000 8000 6000 4000 2000 0 40 80 120 160 200 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 14, Turn-Off Energy Loss vs Collector Current 80000 SWITCHING ENERGY LOSSES (J)
V = 800V CE V = +15V GE R = 4.7
G
V = 800V CE V = +15V GE R = 4.7
G
TJ = 125C
TJ = 25C
0 40 80 120 160 200 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 160000 SWITCHING ENERGY LOSSES (J) 140000 120000 100000 80000 60000 40000 20000 0 0
Eoff,200A Eon2,100A
V = 800V CE V = +15V GE T = 125C
J
0
Eon2,200A
Eon2,200A
70000 60000 50000 40000 30000 20000 10000 0 0
052-6351 Rev B 6-2009
Eoff,200A Eon2,100A Eoff,100A Eon2,50A Eoff,50A
Eoff,100A Eon2,50A Eoff,50A
4 8 12 16 20 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs Gate Resistance
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
Typical Performance Curves
10000 Cies IC, COLLECTOR CURRENT (A) C, CAPACITANCE (pF) 200 250
APT100GT120JRDL
1000
150
Coes 100 Cres
100
50
0 100 200 300 400 500 600 700 800 900 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
10
0 200 400 600 800 1000 1200 1400 VCE, COLLECTOR-TO-EMITTER VOLTAGE FIGURE 18, Minimum Switching Safe Operating Area
0
0.25 ZJC, THERMAL IMPEDANCE (C/W) D = 0.9
0. 2
0.15
0.7 0.5
PDM
0. 1 0.3 0.05 0.1 0 10-4 0.05 10-3 SINGLE PULSE
Note:
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-2 10-1 0.1 1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
40 FMAX, OPERATING FREQUENCY (kHz)
T = 125C J T = 75C C D = 50 % V = 800V CE R = 4.7
G
30
75C
F max = min (f max, f max2) 0.05 f max1 = t d(on) + tr + td(off) + tf f max2 = Pdiss - P cond E on2 + E off TJ - T C R JC
20
10
100C
Pdiss =
20 30 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
0
0
10
052-6351 Rev B 6-2009
APT100GT120JRDL
10% td(on) Gate Voltage
a -46.0ns 780.4V b 422ns 34.13V 468ns 746.3V
TJ = 125C
APT2X31DL120
tr
V CC IC V CE
Collector Current 90% 10% 5% Collector Voltage
5%
Switching Energy
A D.U.T.
Figure 21, Inductive Switching Test Circuit
90%
Figure 22, Turn-on Switching Waveforms and Definitions
TJ = 125C Gate Voltage
a -226ns 97.34V b 928ns 0.000V 1.15s 97.34V
Collector Voltage
td(off)
90% tf 10%
0
Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
052-6351 Rev B 6-2009
Typical Performance Curves
APT100GT120JRDL
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS Symbol Characteristic / Test Conditions
IF(AV) IF(RMS) IFSM Maximum Average Forward Current (TC = 50C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3 ms)
All Ratings: TC = 25C unless otherwise specified. APT100GT120JRDL
60 90 120 Amps
Unit
STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions
IF = 60A VF Forward Voltage IF = 120A IF = 60A, TJ = 125C
Min
Type
1.6 2.0 1.25
Max
2.1
Unit
Volts
DYNAMIC CHARACTERISTICS Symbol Characteristic
trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 60A, diF/dt = -1000A/s VR = 800V, TC = 125C IF = 60A, diF/dt = -200A/s VR = 800V, TC = 125C IF = 60A, diF/dt = -200A/s VR = 800V, TC = 25C
Test Conditions
IF = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25C
Min
-
Typ 61 592 2694 9 793 5744 13 286 6182 42
Max
-
Unit
ns
nC Amps ns nC Amps ns nC Amps
0.9 , THERMAL IMPEDANCE (C/W) 0.8 D = 0.9 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 10
-4
0.7
0.5
Note:
PDM
t1 t2
0.3 0.1 0.05 10-3 SINGLE PULSE
Z
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
JC
t
10-2 10-1 0.1 1 RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 052-6351 Rev B 6-2009
Typical Perfromance Curves
100 500 TJ= 125C TJ= 55C TJ= 25C 60 trr, COLLECTOR CURRENT (A) TJ= 150C 450 400 350 300 250 200 150 100 50 0 0 0 0 200 400 60A 30A 15A
APT100GT120JRDL
T = 125C J V = 800V
R
80 IF, FORWARD CURRENT (A)
40
20
Qrr, REVERSE RECOVERY CHARGE (nC)
0.5 1 1.5 2 2.5 3 VF, ANODE-TO-CATHODE VOLTAGE (V) FIGURE 2, Forward Current vs. Forward Voltage 7000
T = 125C J V = 800V
R
600
800
1000
-diF/dt, CURRENT RATE OF CHANGE (A/s) FIGURE 3, Reverse Recovery Time vs. Current Rate of Change 70 IRRM, REVERSE RECOVERY CURRENT (A) 60 50 40 30 20 10 0 30A 15A
T = 125C J V = 800V
R
6000 5000 4000 3000 2000 1000 0
60A 30A
60A
15A
0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/s) FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change 1.2 1.0 0.8 0.6 0.4 0.2 0 tRR IRRM QRR
0 200 400 60 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/s) FIGURE 5, Reverse Recovery Current vs. Current Rate of Change 100 90
Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s)
80 70 IF(AV) (A) 60 50 40 30 20 10 0 25 50 75 100 125 150 0 25
Duty cycle = 0.5 TJ = 45C
TJ, JUNCTION TEMPERATURE (C) FIGURE 6, Dynamic Parameters vs Junction Temperature 1400 CJ, JUNCTION CAPACITANCE (pF) 1200 1000 800 600 400 200 0
75 100 125 150 Case Temperature (C) FIGURE 7, Maximum Average Forward Current vs. Case Temperature
50
052-6351 Rev B 6-2009
10 100 800 VR, REVERSE VOLTAGE (V) FIGURE 8, Junction Capacitance vs. Reverse Voltage
1
APT100GT120JRDL(G)
Vr +18V 0V D.U.T. 30H
trr/Qrr Waveform
diF /dt Adjust
APT10035LLL
PEARSON 2878 CURRENT TRANSFORMER
Figure 32, Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
0.25 IRRM
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
5
Figure 33, Diode Reverse Recovery Waveform and Definitions
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
1.95 (.077) 2.14 (.084)
* Emitter/Anode
Collector/Cathode
* Emitter/Anode terminals are shorted internally. Current handling capability is equal for either Emitter/Anode terminal.
* Emitter/Anode ) Dimensions in Millimeters and (Inches
Gate
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.
052-6351 Rev B 6-2009

▲Up To Search▲

Price & Availability of APT100GT120JRDL

	To Download APT100GT120JRDL Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .