 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| IPB120N06S4-03 IPI120N06S4-03, IPP120N06S4-03 OptiMOS(R)-T2 Power-Transistor Product Summary V DS R DS(on),max (SMD version) ID 60 2.8 120 PG-TO262-3-1 V m A Features * N-channel - Enhancement mode * AEC Q101 qualified * MSL1 up to 260C peak reflow * 175C operating temperature * Green Product (RoHS compliant) * 100% Avalanche tested PG-TO263-3-2 PG-TO220-3-1 Type IPB120N06S4-03 IPI120N06S4-03 IPP120N06S4-03 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N0603 4N0603 4N0603 Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25C, V GS=10V T C=100C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS I AS V GS P tot T j, T stg T C=25C I D=60A T C=25C Value 120 120 480 392 120 20 167 -55 ... +175 55/175/56 mJ A V W C Unit A Rev. 1.0 page 1 2009-03-23 IPB120N06S4-03 IPI120N06S4-03, IPP120N06S4-03 Parameter Symbol Conditions min. Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R thJC R thJA R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0V, I D= 1mA V GS(th) I DSS V DS=V GS, I D=120A V DS=60V, V GS=0V, T j=25C V DS=60V, V GS=0V, T j=125C2) Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20V, V DS=0V V GS=10V, I D=100A V GS=10V, I D=100A, SMD version 60 2.0 3.0 0.01 4.0 1 A V 0.9 62 62 40 K/W Values typ. max. Unit - 10 2.6 2.3 200 100 3.2 2.8 nA m Rev. 1.0 page 2 2009-03-23 IPB120N06S4-03 IPI120N06S4-03, IPP120N06S4-03 Parameter Symbol Conditions min. Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current2) Diode pulse current2) Diode forward voltage IS I S,pulse V SD T C=25C V GS=0V, I F=100A, T j=25C V R=30V, I F=120A, di F/dt =100A/s 0.6 0.95 120 480 1.3 V A Q gs Q gd Qg V plateau V DD=48V, I D=120A, V GS=0 to 10V 54 13.5 125 5.3 70 27 160 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=30V, V GS=10V, I D=120A, R G=3.5 V GS=0V, V DS=25V, f =1MHz 10120 2480 100 40 10 80 15 13150 pF 3220 200 ns Values typ. max. Unit Reverse recovery time2) t rr - 115 - ns Reverse recovery charge2) 1) Q rr - 110 - nC Current is limited by bondwire; with an R thJC = 0.9K/W the chip is able to carry 181A at 25C. Specified by design. Not subject to production test. 2) 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2009-03-23 IPB120N06S4-03 IPI120N06S4-03, IPP120N06S4-03 1 Power dissipation P tot = f(T C); V GS 6 V 2 Drain current I D = f(T C); V GS 6 V; SMD 180 160 140 140 120 100 120 P tot [W] 80 60 I D [A] 100 80 60 40 40 20 0 0 50 100 150 200 20 0 0 50 100 150 200 T C [C] T C [C] 3 Safe operating area I D = f(V DS); T C = 25 C; D = 0; SMD parameter: t p 1000 1 s 4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T 101 10 s 100 100 100 s 0.5 Z thJC [K/W] I D [A] 10-1 0.1 0.05 10 1 ms 0.01 10-2 single pulse 1 0.1 1 10 100 10-3 10-6 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 1.0 page 4 2009-03-23 IPB120N06S4-03 IPI120N06S4-03, IPP120N06S4-03 5 Typ. output characteristics I D = f(V DS); T j = 25 C; SMD parameter: V GS 480 10 V 8V 7V 6 Typ. drain-source on-state resistance R DS(on) = f(I D); T j = 25 C; SMD parameter: V GS 10 5V 6V 9 400 8 320 7 R DS(on) [m] I D [A] 240 6V 6 5 4 3 7V 160 8V 10 V 80 5V 2 0 0 1 2 3 4 5 6 1 0 80 160 240 320 400 480 V DS [V] I D [A] 7 Typ. transfer characteristics I D = f(V GS); V DS = 6V parameter: T j 480 8 Typ. drain-source on-state resistance R DS(on) = f(T j); I D = 100 A; V GS = 10 V; SMD 5 4.5 4 400 320 240 R DS(on) [m] 175 C 25 C -55 C 3.5 3 2.5 2 1.5 I D [A] 160 80 0 3 4 5 6 7 1 -60 -20 20 60 100 140 180 V GS [V] T j [C] Rev. 1.0 page 5 2009-03-23 IPB120N06S4-03 IPI120N06S4-03, IPP120N06S4-03 9 Typ. gate threshold voltage V GS(th) = f(T j); V GS = V DS parameter: I D 4 105 10 Typ. capacitances C = f(V DS); V GS = 0 V; f = 1 MHz 3.5 104 Ciss V GS(th) [V] 3 1200 A C [pF] Coss 10 120 A 3 2.5 102 2 Crss 1.5 -60 -20 20 60 100 140 180 101 101 0 5 10 15 20 25 30 T j [C] V DS [V] 11 Typical forward diode characteristicis IF = f(VSD) parameter: T j 103 12 Avalanche characteristics I A S= f(t AV) parameter: T j(start) 1000 102 100 25 C 100 C I AV [A] I F [A] 175 C 25 C 150 C 101 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1 0.1 1 10 100 1000 V SD [V] t AV [s] Rev. 1.0 page 6 2009-03-23 IPB120N06S4-03 IPI120N06S4-03, IPP120N06S4-03 13 Avalanche energy E AS = f(T j); ; I D = 60 A 14 Drain-source breakdown voltage V BR(DSS) = f(T j); I D = 1 mA 300 66 250 64 200 150 V BR(DSS) [V] 62 E AS [mJ] 60 100 58 50 0 25 75 125 175 56 -55 -15 25 65 105 145 T j [C] T j [C] 15 Typ. gate charge V GS = f(Q gate); I D = 120 A pulsed parameter: V DD 10 9 8 7 6 12 V 48 V 16 Gate charge waveforms V GS Qg V GS [V] 5 4 3 2 V g s(th) Q g (th) 1 0 0 20 40 60 80 100 120 140 Q sw Q gs Q gd Q gate Q gate [nC] Rev. 1.0 page 7 2009-03-23 IPB120N06S4-03 IPI120N06S4-03, IPP120N06S4-03 Published by Infineon Technologies AG 81726 Munich, Germany (c) Infineon Technologies AG 2009 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2009-03-23 IPB120N06S4-03 IPI120N06S4-03, IPP120N06S4-03 Revision History Version Revision 1.0 Date Changes 23.03.2009 Final data sheet Rev. 1.0 page 9 2009-03-23 |
Price & Availability of IPB120N06S4-03
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |