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| SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT APPLICATION. FEATURE Complementary to KTC8050A. B KTC8550A EPITAXIAL PLANAR PNP TRANSISTOR C A N MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg RATING -35 -30 -5 -800 800 400 150 -55 150 UNIT V V V mA L K D G E H F F mA mW M 1 2 3 C DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00 J 1. EMITTER 2. BASE 3. COLLECTOR TO-92 (F) ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Note : hFE(1) Classification C : 100 200, D : 150 ) TEST CONDITION VCB=-15V, IE=0 IC=-0.5mA, IE=0 IC=-1mA, IB=0 VCE=-1V, IC=-50mA VCE=-1V, IC=-350mA IC=-500mA, IB=-50mA VCE=-1V, IC=-500mA VCE=-5V, IC=-10mA VCB=-10V, f=1MHz, IE=0 MIN. -35 -30 100 60 TYP. 120 19 MAX. -50 300 -0.5 -1.2 V V MHz pF UNIT nA V V SYMBOL ICBO V(BR)CBO V(BR)CEO hFE(1) (Note) hFE(2) VCE(sat) VBE fT Cob 300 2010. 1. 28 Revision No : 2 1/2 KTC8550A I C - V CE -1k COLLECTOR CURRENT I C (mA) -800 -600 -400 -200 0 COMMON EMITTER Ta=25 C -8 -7 -6 -5 -4 -3 -2 IB =-1mA 0 h FE - I C 2k DC CURRENT GAIN h FE 1k 500 300 100 50 30 10 -1 -3 -10 -30 -100 -300 -1k COMMON EMITTER VCE =-1V Ta=100 C Ta=25 C Ta=-25 C 0 -1 -2 -3 -4 -5 -6 COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (mA) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VCE(sat) (V) COLLECTOR CURRENT I C (mA) -3 -1 -0.5 -0.3 -0.1 -0.05 -0.03 -0.01 -1 -3 -10 -30 -100 -300 -1k COLLECTOR CURRENT I C (mA) Ta=100 C Ta=25 C Ta=-25 C COMMON EMITTER I C /I B =25 I C - V BE -1k -500 -300 -100 -50 -30 -10 -5 -3 -1 -0.2 COMMON EMITTER VCE =-1V Ta= 100 C 25 C -0.4 -0.6 Ta= -25 Ta= C -0.8 -1.0 BASE-EMITTER VOLTAGE V BE (V) COLLECTOR POWER DISSIPATION PC (mW) Pc - Ta 700 600 500 400 300 200 100 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) 2010. 1. 28 Revision No : 2 2/2 |
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