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HiPerFASTTM IGBT
B2-Class High Speed IGBTs
IXGH 50N60B2 IXGT 50N60B2
VCES IC25 VCE(sat) tfi typ
= 600 V = 75 A = 2.0 V = 65 ns
Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C (limited by leads) TC = 110C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 10 Clamped inductive load @ 600V TC = 25C
Maximum Ratings 600 600 20 30 75 50 200 ICM = 80 400 -55 ... +150 150 -55 ... +150 300 V V V V A A A A W C C C C
TO-247 (IXGH)
C (TAB) G C E
TO-268 (IXGT)
G E
C (TAB)
G = Gate, E = Emitter,
C = Collector, TAB = Collector
Features High frequency IGBT High current handling capability MOS Gate turn-on - drive simplicity Applications PFC circuits Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers Advantages High power density Very fast switching speeds for high frequency applications
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (TO-247)
1.13/10Nm/lb.in. TO-247 AD TO-268 6 4 g g
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 3.0 TJ = 25C TJ = 150C 5.0 50 1 100 TJ = 125C 1.6 1.5 2.0 V A mA nA V V
VGE(th) ICES IGES VCE(sat)
IC = 250 A, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = 40 A, VGE = 15 V
(c) 2004 IXYS All rights reserved
DS99145A(03/04)
IXGH 50N60B2 IXGT 50N60B2
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 40 55 3500 VCE = 25 V, VGE = 0 V, f = 1 MHz 240 50 140 IC = 40 A, VGE = 15 V, VCE = 0.5 VCES 23 44 18 Inductive load, TJ = 25C IC = 40 A, VGE = 15 V VCE = 480 V, RG = Roff = 5 25 190 65 0.55 18 Inductive load, TJ = 125C IC = 40 A, VGE = 15 V VCE = 480 V, RG = Roff = 5 25 0.45 290 140 1.55 300 S
P
TO-247 AD Outline
gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC = 40 A; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 %
pF pF pF nC nC nC ns ns ns ns 0.85 mJ ns ns mJ ns ns mJ 0.31 K/W TO-268 Outline
e
Dim.
Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 2.2 2.6 A2 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
(TO-247)
0.25
K/W
Min. Recommended Footprint (Dimensions in inches and mm)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344
IXGH 50N60B2 IXGT 50N60B2
Fig. 1. Output Characte ristics @ 25 Deg. C
80 70 60 VGE = 15V 13V 11V 9V 280 240 320 VGE = 15V 13V 11V
Fig. 2. Extended Output Characte ristics @ 25 de g. C
I C - Amperes
50 40 30 20 10 0 0.5 1 1.5 2
I C - Amperes
7V
200 160 120 80
9V
6V
7V
5V
40 0 5V 0 1 2 3 4 5 6 7 8
2.5
3
V C E - Volts Fig. 3. Output Characteristics @ 125 Deg. C
80 70 60 VGE = 15V 13V 11V 9V 1.4 1.3 7V
V C E - Volts
Fig. 4. De pende nce of V CE(sat) on Tem perature
V GE = 15V
I C = 80A
50 40 30 20 10 0 0.5 1 1.5 2 2.5 3 5V 6V
V C E (sat)- Normalized
1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75
I C - Amperes
I C = 40A
I C = 20A
100
125
150
V CE - Volts Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage
3.7 3.4 3.1 TJ = 25C 200 180 160
TJ - Degrees Centigrade Fig. 6. Input Adm ittance
VC E - Volts
2.8 2.5 2.2 1.9 1.6 1.3 5 6 7 8
I C - Amperes
I C = 80A 40A 20A
140 120 100 80 60 40 20 0 TJ = 125C 25C -40C
9
10 11 12
13 14 15 16 17
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
V G E - Volts
(c) 2004 IXYS All rights reserved
V G E - Volts
IXGH 50N60B2 IXGT 50N60B2
Fig. 7. Transconductance
80 70 60 TJ = -40C 25C 125C 5 4.5 4 TJ = 125C VGE = 15V VCE = 480V
Fig. 8. Dependence of Turn-Off Energy on RG
I C = 80A
50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 180 200
E off - milliJoules
g f s - Siemens
3.5 3 2.5 2 1.5 1 0.5 0 5 10 15 20 25 30 35 40 45 50 I C = 20A I C = 40A
I C - Amperes Fig. 9. Dependence of Turn-Off Energy on IC
4 3.5 3 R G = 5 R G = 24.4 - - - VGE = 15V VCE = 480V 4 3.5 3
R G - Ohms Fig. 10. Dependence of Turn-Off Energy on Tem perature
R G = 5 R G = 24.4 - - VGE = 15V VCE = 480V I C = 80A
E off - MilliJoules
2.5 TJ = 125C 2 1.5 1 0.5 0 20 30 40 TJ = 25C
E off - milliJoules
2.5 2 1.5 1 0.5 0 I C = 20A 25 35 45 55 65 75 85 95 105 115 125 I C = 40A
I C - Amperes
50
60
70
80
TJ - Degrees Centigrade Fig. 12. Dependence of Turn-Off Sw itching Tim e on IC td(off) tfi - - - - - R G = 5 VGE = 15V VCE = 480V TJ = 125C 200 150 100 50 0 TJ = 25C
Fig. 11. Dependence of Turn-Off Sw itching Tim e on RG
1000
400 350 300 250
Switching Time - nanosecond
500
TJ = 125C VGE = 15V VCE = 480V I C = 20A I C = 40A I C = 80A
100 5 10 15 20 25 30 35 40 45 50
Switching Time - nanosecond
td(off) tfi - - - - - -
20
30
40
50
60
70
80
R G - Ohms
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715
I C - Amperes
6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344
IXGH 50N60B2 IXGT 50N60B2
Fig. 13. De pendence of Turn-Off Sw itching Tim e on Te m perature
350 300 250 200 I C = 40A 150 100 50 0 25 35 45 55 65 75 85 95 105 115 125 I C = 80A 90
Fig. 14. Reverse -Bias Safe Operating Are a
80 70 60
Switching Time - nanosecond
td(off) tfi - - - - - R G = 5 VGE = 15V VCE = 480V I C = 20A
I C - Amperes
50 40 30 20 10 0 TJ = 125 C R G = 10 dV/dT < 10V/ns
TJ - Degrees Centigrade Fig. 15. Gate Charge
16 14 12 10 8 6 4 2 0 0 30 60 90 120 150 10 VCE = 300V I C = 40A I G = 10mA 10000
100
200
300
V
CE
- Volts
400
500
600
Fig. 16. Capacitance
f = 1 MHz
Capacitance - p F
C ies 1000
VG E - Volts
100
C oes
C res
0
5
10
15
Q G - nanoCoulombs
V C E - Volts
20
25
30
35
40
Fig. 17. Maxim um Transient Therm al Resistance
0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 1 10
R ( t h ) J C - C / W
Pulse Width - milliseconds
100
1000
(c) 2004 IXYS All rights reserved

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