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| 2ES032XXXJL 2ES032XXXJL SERIES TRANSIENT VOLTAGE SUPPRESSORS DESCRIPTION 2ES032XXXJL series are transient voltage suppressors diode chips for plastic package that fabricated in silicon epitaxial planar technology; Excellent clamping capability; Fast response time ; Low leakage; ESD>16KV(Human Body Model); Top metal is AL, Back metal is Au; Chip size: 320m X 320m; Chip Thickness: 18020m. 2ES032XXX JLCHIP TOPOGRAPHY La: Chip Size: 320m; Lb: Pad Size: 180m; ABSOLUTE MAXIMUM RATINGS Characteristics Total Power Dissipation@ Tamb=25C Maximum Operation Junction Temperature Storage Temperature Range Symbol PD TJ Tstg Value 200 175 -50~+175 Unit mW C C ELECTRICAL CHARACTERISTICS (Tamb=25C) Symbol IPP VC VRWM IR VBR IT Parameters Maximum reverse peak pulse current Clamping voltage @ IPP Working peak reverse voltage Maximum reverse leakage current @ VRWM Breakdown voltage @ IT Test current HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2008.03.17 Page 1 of 2 2ES032XXXJL ELECTRICAL CHARACTERISTICS (For packaged diodes, Tamb==25C) VRWM (V) Max. 2ES032025JL 2ES032033JL 2ES032050JL 2ES032060JL 2ES032070JL 2ES032120JL 2.5 3.3 5.0 6.0 7.0 12.0 IR(A)@ VRWM Max. 6.0 0.05 0.05 0.01 0.01 0.01 VBR(V) @IT Typ. 4.0 5.0 6.2 6.8 7.5 14.1 IT mA 1.0 1.0 1.0 1.0 1.0 1.0 VC (V)@ Max IPP Max. 10.9 14.1 18.6 20.5 22.7 25.0 IPP(A)* Max 11.0 11.2 9.4 8.8 8.8 9.6 PPK(W) Max 120 158 174 181 200 240 C(PF) Typ. 145 105 80 70 65 55 Type Note: 1. VF<0.9V@IF=10mA for all types; 2. * 8x20m plus waveform. HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2008.03.17 Page 2 of 2 |
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