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| Thyristor Modules Thyristor/Diode Modules Preliminary Data Sheet PSKT 44 PSKH 44 ITRMS ITAVM VRRM = 2 x 80 A = 2 x 51 A = 800-1800 V VRSM VRRM VDSM VDRM V 900 1300 1500 1700 1900 Type Version 1 PSKT 44/08io1 PSKT 44/12io1 PSKT 44/14io1 PSKT 44/16io1 PSKT 44/18io1 V 800 1200 1400 1600 1800 Version 8 PSKT PSKT PSKT PSKT PSKT 44/08io8 44/12io8 44/14io8 44/16io8 44/18io8 PSKH 44/08io8 PSKH 44/12io8 PSKH 44/14io8 PSKH 44/16io8 PSKH 44/18io8 TO-240 AA 1 2 3 6 7 4 5 Symbol ITRMS, IFRMS ITAVM, IFAVM ITSM, IFSM Test Conditions TVJ = TVJM TC = 83C; 180 sine TC = 85C; 180 sine TVJ = 45C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 80 51 49 1150 1230 1000 1070 6600 6280 5000 4750 150 500 1000 10 5 0.5 10 -40...+125 125 -40...+125 A A A A A A A A2s A2s A2s A2s A/s Features A/s V/s W W W V C C C V~ V~ 3 67 1 542 PSKT Version 1 3 61 52 PSKT Version 8 3 1 52 i2dt TVJ = 45C VR = 0 TVJ = TVJM VR = 0 PSKH Version 8 (di/dt)cr TVJ = TVJM repetitive, IT = 150 A f =50 Hz, tP =200 s VD = 2/3 VDRM IG = 0.45 A non repetitive, IT = ITAVM diG/dt = 0.45 A/s TVJ = TVJM; VDR = 2/3 VDRM RGK = ; method 1 (linear voltage rise) TVJ = TVJM IT = ITAVM tP = 30 s tP = 300 s (dv/dt)cr PGM PGAV VRGM TVJ TVJM Tstg VISOL Md Weight International standard package, JEDEC TO-240 AA Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 148688 Gate-cathode twin pins for version 1 Applications 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s 3000 3600 DC motor control Softstart AC motor controller Light, heat and temperature control Mounting torque (M5) Terminal connection torque (M5) Typical including screws 2.5-4.0/22-35 Nm/lb.in. 2.5-4.0/22-35 Nm/lb.in. 90 g Advantages Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. Space and weight savings Simple mounting with two screws Improved temperature and power cycling capability Reduced protection circuits 2003 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 Symbol IRRM, IDRM VT, VF VT0 rT VGT IGT VGD IGD IL IH tgd tq QS IRM RthJC RthJK dS dA a Test Conditions TVJ = TVJM; VR = VRRM; VD = VDRM IT, IF = 200 A; TVJ = 25C Characteristic Values 5 1.75 0.85 5.3 1.5 1.6 100 200 0.2 10 450 200 2 typ. 150 90 11 0.53 0.265 0.73 0.365 12.7 9.6 50 mA V V m V V mA mA V mA mA mA s s C A K/W K/W K/W K/W mm mm m/s 2 tgd VG 10 1: IGT, TVJ = 125C V 2: IGT, TVJ = 25C 3: IGT, TVJ = -40C For power-loss calculations only (TVJ = 125C) VD = 6 V; VD = 6 V; TVJ = TVJM; TVJ TVJ TVJ TVJ = = = = 25C -40C 25C -40C 1 1 2 3 5 4 6 VD = 2/3 VDRM TVJ = 25C; tP = 10 s, VD = 6 V IG = 0.45 A; diG/dt = 0.45 A/s TVJ = 25C; VD = 6 V; RGK = TVJ = 25C; VD = 1/2 VDRM IG = 0.45 A; diG/dt = 0.45 A/s TVJ = TVJM; IT = 120 A, tP = 200 s; -di/dt = 10 A/s VR = 100 V; dv/dt = 20 V/s; VD = 2/3 VDRM TVJ = TVJM; IT, IF = 50 A, -di/dt = 0.64 A/s per per per per thyristor/diode; DC current module thyristor/diode; DC current module 4: PGAV = 0.5 W IGD, TVJ = 125C 0.1 100 101 102 5: PGM = 5W 6: PGM = 10 W 103 IG mA 104 Fig. 1 Gate trigger characteristics 1000 TVJ = 25C s typ. other values see Fig. 8/9 100 Limit Creepage distance on surface Strike distance through air Maximum allowable acceleration 10 1 10 100 mA IG 1000 Fig. 2 Gate trigger delay time Dimensions in mm (1 mm = 0.0394") PSKT Version 1 PSKT Version 8 PSKH Version 8 2003 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 Fig. 3 Surge overload current ITSM, IFSM: Crest value, t: duration Fig. 4 i2dt versus time (1-10 ms) Fig. 4a Maximum forward current at case temperature Fig. 5 Power dissipation versus onstate current and ambient temperature (per thyristor or diode) Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature Circuit B6 3 x PSKT 44 or 3 x PSKH 44 2003 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature Circuit W3 3 x PSKT 44 or 3 x PSKH 44 PSKT 44 or PSKH 44 Z thJC (t) Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) RthJC for various conduction angles d: d DC 180 120 60 30 RthJC (K/W) 0.53 0.55 0.58 0.6 0.62 Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 0.015 0.026 0.489 ti (s) 0.0035 0.02 0.195 PSKT 44 or PSKH 44 ZthJK(t) Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) RthJK for various conduction angles d: d DC 180 120 60 30 RthJK (K/W) 0.73 0.75 0.78 0.8 0.82 Constants for ZthJK calculation: i 1 2 3 4 POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 Rthi (K/W) 0.015 0.026 0.489 0.2 ti (s) 0.0035 0.02 0.195 0.68 2003 POWERSEM reserves the right to change limits, test conditions and dimensions |
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