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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD2549 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V(Min) *Low Collector Saturation Voltgae: VCE(sat)= 0.7V(Max.)@ IC= 3A *Good Linearity of hFE APPLICATIONS *Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE UNIT 80 V 80 V 6 V 3 A 5 A 20 W .cn mi e IC Collector Current-Continuous ICM Collector Current-Peak Collector Power Dissipation @TC=25 PC Collector Power Dissipation @Ta=25 TJ Junction Temperature 2 150 Tstg Storage Temperature -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD2549 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 80 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.375A B 0.7 V VBE(on) ICES ICEO Base-Emitter On Voltage IC= 3A; VCE= 4V 1.8 V A A Collector Cutoff Current VCE= 70V; VBE= 0 VCE= 70V; IB= 0 B 100 Collector Cutoff Current 100 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE-1 DC Current Gain hFE-2 DC Current Gain fT Current-Gain--Bandwidth Product Switching Times ton tstg tf Turn-on Time w ww scs .i IC= 1A; VCE= 4V IC= 3A; VCE= 4V IC= 0.5A; VCE= 10V .cn mi e 70 10 1.0 mA 250 30 MHz 0.5 s s s Storage Time IC= 1A; IB1= -IB2= 0.1A; VCC= 50V 4.5 Fall Time 0.5 hFE-1 Classifications Q 70-150 P 120-250 isc Websitewww.iscsemi.cn 2 |
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