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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3751 DESCRIPTION *High Breakdown Voltage and High Reliability *High Switching Speed *Wide Area of Safe Operation APPLICATIONS *Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w w scs .i w 1100 V 800 V 7 V 1.5 A 5 A 0.8 A 25 W .cn mi e ICM Collector Current-Pulse IB Base Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature PC TJ 150 Tstg Storage Temperature -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC= 5mA; RBE= IC= 1mA; IE= 0 IE= 1mA; IC= 0 IC= 0.75A; IB= 0.15A IC= 0.75A; IB= 0.15A VCB= 800V; IE= 0 VEB= 5V; IC= 0 MIN 800 1100 7 2SC3751 TYP. MAX UNIT V V V 2.0 1.5 10 10 40 V V A A Current-Gain--Bandwidth Product Output Capacitance Switching times ton tstg tf w ww scs .i IC= 0.1A; VCE= 5V IC= 0.5A; VCE= 5V IC= 0.1A; VCE= 10V .cn mi e 10 8 15 35 MHz pF IE= 0; VCB= 10V; f= 1MHz Turn-on Time Storage Time Fall Time IC= 1A, IB1= 0.2A; IB2= -0.4A; RL= 400, VCC= 400V 0.5 3.0 0.3 s s s hFE-1 Classifications K 10-20 L 15-30 M 20-40 isc Websitewww.iscsemi.cn 2 |
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