View PESD5V0L7BAS_4545875.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PESD5V0L7BAS; PESD5V0L7BS
Low capacitance 7-fold bidirectional ESD protection diode arrays
Rev. 03 -- 20 August 2009 Product data sheet
1. Product profile
1.1 General description
Low capacitance 7-fold bidirectional ESD protection diode arrays in small plastic packages designed for the protection of up to seven transmission or data lines from damage caused by ElectroStatic Discharge (ESD) and other transients.
Table 1. Product overview Package Name PESD5V0L7BAS PESD5V0L7BS TSSOP8 SO8 NXP SOT505-1 SOT96-1
Type number
1.2 Features
I I I I ESD protection of up to seven lines Low diode capacitance Max. peak pulse power: Ppp = 35 W Low clamping voltage: V(CL)R = 17 V I I I I Ultra low leakage current: IRM = 3 nA ESD protection of up to 10 kV IEC 61000-4-2, level 4 (ESD) IEC 61000-4-5 (surge); Ipp = 2.5 A
1.3 Applications
I Computers and peripherals I Communication systems I Audio and video equipment I High speed data lines I Parallel ports
1.4 Quick reference data
Table 2. Symbol VRWM Cd Quick reference data Parameter reverse stand-off voltage diode capacitance VR = 0 V; f = 1 MHz Conditions Min Typ 8 Max 5 10 Unit V pF
NXP Semiconductors
PESD5V0L7BAS; PESD5V0L7BS
Low capacitance 7-fold bidirectional ESD protection diode arrays
2. Pinning information
Table 3. Pin TSSOP8 1 2 3 4 5 6 7 8 SO8 1 2 3 4 5 6 7 8 cathode 1 cathode 2 cathode 3 cathode 4 cathode 5 cathode 6 cathode 7 cathode 8
sym005
Discrete pinning Description cathode 1 cathode 2 cathode 3 cathode 4 cathode 5 cathode 6 cathode 7 cathode 8
sym005
Simplified outline
Symbol
8
5
1 2 3
8 7 6 5
1
4
4
8
5
1 2 3 4
8 7 6 5
1
4
3. Ordering information
Table 4. Ordering information Package Name PESD5V0L7BAS PESD5V0L7BS TSSOP8 SO8 Description plastic thin shrink small outline package; 8 leads; body width 3 mm plastic small outline package; 8 leads; body width 3.9 mm Version SOT505-1 SOT96-1 Type number
4. Marking
Table 5. Marking codes Marking code 5V0L7B 5V0L7BS Type number PESD5V0L7BAS PESD5V0L7BS
PESD5V0L7BAS_BS_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 20 August 2009
2 of 14
NXP Semiconductors
PESD5V0L7BAS; PESD5V0L7BS
Low capacitance 7-fold bidirectional ESD protection diode arrays
5. Limiting values
Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per diode Ppp Ipp Tj Tamb Tstg
[1]
Parameter peak pulse power peak pulse current junction temperature ambient temperature storage temperature
Conditions 8/20 s pulse 8/20 s pulse
[1] [1]
Min -65 -65
Max 35 2.5 150 +150 +150
Unit W A C C C
Non-repetitive current pulse 8/20 s exponentially decaying waveform according to IEC61000-4-5; see Figure 1.
Table 7. Symbol ESD
ESD maximum ratings Parameter electrostatic discharge capability Conditions IEC 61000-4-2 (contact discharge) HBM MIL-STD883
[1]
Min -
Max 10 10
Unit kV kV
[1]
Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Figure 2.
Table 8. Standard
ESD standards compliance Conditions > 8 kV (contact) > 4 kV
IEC 61000-4-2, level 4 (ESD); see Figure 2 HBM MIL-STD883, class 3
PESD5V0L7BAS_BS_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 20 August 2009
3 of 14
NXP Semiconductors
PESD5V0L7BAS; PESD5V0L7BS
Low capacitance 7-fold bidirectional ESD protection diode arrays
001aaa191
120 IPP (%) 80 100 % IPP; 8 s
001aaa630
Ipp 100 % 90 %
e-t 50 % IPP; 20 s
40
10 % tr = 0.7 to 1 ns 0 10 20 30 t (s) 40 30 ns 60 ns t
0
Fig 1.
8/20 s pulse waveform according to IEC 61000-4-5
Fig 2.
ElectroStatic Discharge (ESD) pulse waveform according to IEC 61000-4-2
PESD5V0L7BAS_BS_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 20 August 2009
4 of 14
NXP Semiconductors
PESD5V0L7BAS; PESD5V0L7BS
Low capacitance 7-fold bidirectional ESD protection diode arrays
6. Characteristics
Table 9. Characteristics Tamb = 25 C unless otherwise specified Symbol Per diode VRWM IRM V(CL)R V(BR) rdif Cd reverse stand-off voltage reverse leakage current clamping voltage breakdown voltage differential resistance diode capacitance VRWM = 5 V; see Figure 6 Ipp = 1 A Ipp = 2.5 A IR = 1 mA IR = 1 mA VR = 0 V; f = 1 MHz; see Figure 5
[1] [1]
Parameter
Conditions
Min 7.2 -
Typ 3 7.6 8
Max 5 25 11 17 7.9 100 10
Unit V nA V V V pF
[1]
Non-repetitive current pulse 8/20 s exponentially decaying waveform according to IEC61000-4-5; see Figure 1.
PESD5V0L7BAS_BS_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 20 August 2009
5 of 14
NXP Semiconductors
PESD5V0L7BAS; PESD5V0L7BS
Low capacitance 7-fold bidirectional ESD protection diode arrays
102
001aaa192
1.2 PPP
001aaa193
Ppp (W)
PPP(25C) 0.8
10
0.4
1 1 10
102
103 tp (s)
104
0 0 50 100 150 Tj (C) 200
Tamb = 25 C
Fig 3.
Peak pulse power as a function of exponential pulse duration tp; typical values
Fig 4.
Relative variation of peak pulse power as a function of junction temperature; typical values
10
001aaa143
9 Cd (pF) 8
001aaa142
IRM IRM(25C)
1
7
6 0 1 2 3 4 VR (V) 5
0 -100
-50
0
50
100
150 Tj (C)
Tamb = 25 C; f = 1 MHz
Fig 5.
Diode capacitance as a function of reverse voltage; typical values
Fig 6.
Relative variation of reverse leakage current as a function of junction temperature; typical values
PESD5V0L7BAS_BS_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 20 August 2009
6 of 14
NXP Semiconductors
PESD5V0L7BAS; PESD5V0L7BS
Low capacitance 7-fold bidirectional ESD protection diode arrays
ESD TESTER RZ
450
RG 223/U 50 coax
10x ATTENUATOR
4 GHz DIGITAL OSCILLOSCOPE 50
CZ
IEC 61000-4-2 network CZ = 150 pF; RZ = 330
DUT: PESD5V0L7BAS PESD5V0L7BS
vertical scale = 200 V/div horizontal scale = 50 ns/div
vertical scale = 10 V/div horizontal scale = 50 ns/div
GND
GND
unclamped +1 kV ESD voltage waveform (IEC 61000-4-2 network)
clamped +1 kV ESD voltage waveform (IEC 61000-4-2 network)
GND
GND
vertical scale = 200 V/div horizontal scale = 50 ns/div unclamped -1 kV ESD voltage waveform (IEC 61000-4-2 network)
vertical scale = 10 V/div horizontal scale = 50 ns/div clamped -1 kV ESD voltage waveform (IEC 61000-4-2 network)
006aaa062
Fig 7.
ESD clamping test setup and waveforms
PESD5V0L7BAS_BS_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 20 August 2009
7 of 14
NXP Semiconductors
PESD5V0L7BAS; PESD5V0L7BS
Low capacitance 7-fold bidirectional ESD protection diode arrays
7. Application information
The PESD5V0L7BAS and the PESD5V0L7BS are designed for protection of up to seven bidirectional data lines from the damage caused by ElectroStatic Discharge (ESD) and surge pulses. The PESD5V0L7BAS and the PESD5V0L7BS may be used on lines whose signal polarities are above and below ground. The PESD5V0L7BAS and the PESD5V0L7BS provide a surge capability of 35 W per line for a 8/20 s waveform.
high speed data lines
PESD5V0L7BAS PESD5V0L7BS
GND
006aaa063
Fig 8.
Typical application for ESD protection of seven lines carrying bidirectional data
Circuit board layout and protection device placement: Circuit board layout is critical for the suppression of ESD, EFT and surge transients. The following guidelines are recommended: 1. Place the protection device as close as possible to the input terminal or connector. 2. Minimize the path length between the protection device and the protected line. 3. Keep parallel signal paths to a minimum. 4. Avoid running protected conductors in parallel with unprotected conductors. 5. Minimize all printed-circuit board conductive loops including power and group loops. 6. Minimize the length of transient return paths to ground. 7. Avoid using shared return paths to a common ground point. 8. Ground planes should be used whenever possible. 9. Use vias for multilayer printed-circuit boards.
PESD5V0L7BAS_BS_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 20 August 2009
8 of 14
NXP Semiconductors
PESD5V0L7BAS; PESD5V0L7BS
Low capacitance 7-fold bidirectional ESD protection diode arrays
8. Package outline
TSSOP8: plastic thin shrink small outline package; 8 leads; body width 3 mm SOT505-1
D
E
A
X
c y HE vMA
Z
8
5
A2 pin 1 index
A1
(A3)
A
Lp L
1
e bp
4
detail X wM
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A max. 1.1 A1 0.15 0.05 A2 0.95 0.80 A3 0.25 bp 0.45 0.25 c 0.28 0.15 D(1) 3.1 2.9 E(2) 3.1 2.9 e 0.65 HE 5.1 4.7 L 0.94 Lp 0.7 0.4 v 0.1 w 0.1 y 0.1 Z(1) 0.70 0.35 6 0
Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT505-1 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 99-04-09 03-02-18
Fig 9.
Package outline SOT505-1 (TSSOP8)
(c) NXP B.V. 2009. All rights reserved.
PESD5V0L7BAS_BS_3
Product data sheet
Rev. 03 -- 20 August 2009
9 of 14
NXP Semiconductors
PESD5V0L7BAS; PESD5V0L7BS
Low capacitance 7-fold bidirectional ESD protection diode arrays
SO8: plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
D
E
A X
c y HE vMA
Z 8 5
Q A2 A1 pin 1 index Lp 1 e bp 4 wM L detail X (A 3) A
0
2.5 scale
5 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches Notes 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included. OUTLINE VERSION SOT96-1 REFERENCES IEC 076E03 JEDEC MS-012 JEITA EUROPEAN PROJECTION A max. 1.75 0.069 A1 0.25 0.10 A2 1.45 1.25 A3 0.25 0.01 bp 0.49 0.36 c 0.25 0.19 D (1) 5.0 4.8 0.20 0.19 E (2) 4.0 3.8 0.16 0.15 e 1.27 0.05 HE 6.2 5.8 L 1.05 Lp 1.0 0.4 Q 0.7 0.6 v 0.25 0.01 w 0.25 0.01 y 0.1 0.004 Z (1) 0.7 0.3 0.028 0.012
0.010 0.057 0.004 0.049
0.019 0.0100 0.014 0.0075
0.244 0.039 0.028 0.041 0.228 0.016 0.024
8o o 0
ISSUE DATE 99-12-27 03-02-18
Fig 10. Package outline SOT96-1 (SO8/MS-012)
PESD5V0L7BAS_BS_3 (c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 20 August 2009
10 of 14
NXP Semiconductors
PESD5V0L7BAS; PESD5V0L7BS
Low capacitance 7-fold bidirectional ESD protection diode arrays
9. Packing information
Table 10. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PESD5V0L7BAS PESD5V0L7BS
[1]
Package SOT505-1 SOT96-1
Description 8 mm pitch, 12 mm tape and reel 8 mm pitch, 12 mm tape and reel
Packing quantity 1000 -115 2500 -118 -118
For further information and the availability of packing methods, see Section 12.
PESD5V0L7BAS_BS_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 20 August 2009
11 of 14
NXP Semiconductors
PESD5V0L7BAS; PESD5V0L7BS
Low capacitance 7-fold bidirectional ESD protection diode arrays
10. Revision history
Table 11. Revision history Release date 20090820 Data sheet status Product data sheet Change notice Supersedes PESD5V0L7BAS_BS_2 Document ID PESD5V0L7BAS_BS_3 Modifications:
* *
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. Table 3 "Discrete pinning": amended Product data sheet Product specification PESD5V0L7BS_1 -
PESD5V0L7BAS_BS_2 PESD5V0L7BS_1
20041125 20040315
PESD5V0L7BAS_BS_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 20 August 2009
12 of 14
NXP Semiconductors
PESD5V0L7BAS; PESD5V0L7BS
Low capacitance 7-fold bidirectional ESD protection diode arrays
11. Legal information
11.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
11.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
11.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
PESD5V0L7BAS_BS_3
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 -- 20 August 2009
13 of 14
NXP Semiconductors
PESD5V0L7BAS; PESD5V0L7BS
Low capacitance 7-fold bidirectional ESD protection diode arrays
13. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Application information. . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packing information. . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 20 August 2009 Document identifier: PESD5V0L7BAS_BS_3

▲Up To Search▲

Price & Availability of PESD5V0L7BAS

	To Download PESD5V0L7BAS Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .