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| SEMICONDUCTOR TECHNICAL DATA General Description KHB019N20P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB019N20P1 A O C F E G B Q I K M L J D N N H P DIM MILLIMETERS _ 9.9 + 0.2 A B C D E F G H I J K L M N O 1 2 3 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters and switching mode power supplies. FEATURES VDSS=200V, ID=19A Drain-Source ON Resistance : RDS(ON)=0.18 Qg(typ.)=35nC @VGS = 10V 15.95 MAX 1.3+0.1/-0.05 _ 0.8 + 0.1 _ 3.6 + 0.2 _ 2.8 + 0.1 3.7 0.5+0.1/-0.05 1.5 _ 13.08 + 0.3 1.46 _ 1.4 + 0.1 _ 1.27 + 0.1 _ 2.54 + 0.2 _ 0.2 4.5 + _ 2.4 + 0.2 _ 9.2 + 0.2 1. GATE 2. DRAIN 3. SOURCE P Q MAXIMUM RATING (Tc=25 ) RATING TO-220AB CHARACTERISTIC SYMBOL KHB019N20P1 KHB019N20F1 UNIT KHB019N20F2 V V 19* 12.1* 76* A K L E KHB019N20F1 A F C B Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 VGSS ID IDP EAS EAR dv/dt PD Tj Tstg 140 1.12 19 12.1 76 30 O Drain-Source Voltage VDSS 200 DIM MILLIMETERS M J R 250 14 4.5 50 0.4 150 -55 150 mJ D mJ V/ns Q 1 N N H 2 3 A B C D E F G H J K L M N O Q R _ 10.16 + 0.2 _ 15.87 + 0.2 _ 2.54 + 0.2 _ 0.8 + 0.1 _ 3.18 + 0.1 _ 3.3 + 0.1 _ 0.2 12.57 + _ 0.5 + 0.1 13.0 MAX _ 3.23 + 0.1 1.47 MAX 1.47 MAX _ 2.54 + 0.2 _ 6.68 + 0.2 _ 4.7 + 0.2 _ 2.76 + 0.2 W W/ G 1. GATE 2. DRAIN 3. SOURCE Maximum Junction Temperature Storage Temperature Range Thermal Characteristics TO-220IS (1) KHB019N20F2 A C F Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-toAmbient RthJC RthCS RthJA 0.89 0.5 62.5 2.5 62.5 /W S /W /W P E G B DIM MILLIMETERS * : Drain current limited by maximum junction temperature. K L L R J PIN CONNECTION D M D D N N H G 1 2 3 A B C D E F G H J K L M N P Q R S _ 10.0 + 0.3 _ 15.0 + 0.3 _ 2.70 + 0.3 0.76+0.09/-0.05 _ 3.2 +0.2 _ 3.0 + 0.3 _ 12.0 + 0.3 0.5+0.1/-0.05 _ 13.6 + 0.5 _ 3.7 + 0.2 1.2+0.25/-0.1 1.5+0.25/-0.1 _ 2.54 +0.1 _ 6.8 + 0.1 _ 4.5 + 0.2 _ 2.6 + 0.2 0.5 Typ Q 1. GATE 2. DRAIN 3. SOURCE S TO-220IS 2007. 5. 10 Revision No : 0 1/7 KHB019N20P1/F1/F2 ELECTRICAL CHARACTERISTICS (Tc=25 CHARACTERISTIC ) TEST CONDITION MIN. TYP. MAX. UNIT SYMBOL Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance BVDSS BVDSS/ Tj IDSS Vth IGSS RDS(ON) ID=250 A, VGS=0V ID=250 A, Referenced to 25 VDS=200V, VGS=0V, VDS=VGS, ID=250 A VGS= 30V, VDS=0V VGS=10V, ID=9.5A 200 2 0.18 0.14 10 4 100 0.18 V V/ A V nA Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Reverse Transfer Capacitance Output Capacitance Source-Drain Diode Ratings Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS VGS Note 5) Essentially independent of operating temperature. 2007. 5. 10 Revision No : 0 2/7 KHB019N20P1/F1/F2 Fig1. ID - VDS VGS TOP : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 101 5.0 V Bottom : 4.5 V Fig2. ID - VGS Drain Current ID (A) Drain Current ID (A) 10 1 150 C 25 C -55 C 10 0 100 10-1 100 101 10 -1 2 4 6 8 10 Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V) Fig3. BVDSS - Tj Normalized Breakdown Voltage BVDSS 1.2 0.8 Fig4. RDS(ON) - ID On - Resistance RDS(ON) () VGS = 0V IDS = 250 1.1 0.6 1.0 0.4 VGS = 10V VGS = 20V 0.9 0.2 0.8 -100 -50 0 50 100 150 0.0 0 10 20 30 40 50 60 Junction Temperature Tj ( C ) Drain Current ID (A) Fig5. IS - VSD 3.0 Fig6. RDS(ON) - Tj VGS = 10V IDS = 9.5V Reverse Drain Current IS (A) 101 Normalized On Resistance 1.2 1.6 2.0 2.4 2.5 2.0 1.5 1.0 0.5 100 150 C 25 C 10-1 0.0 0.4 0.8 0.0 -100 -50 0 50 100 150 Source - Drain Voltage VSD (V) Junction Temperature Tj ( C ) 2007. 5. 10 Revision No : 0 3/7 KHB019N20P1/F1/F2 Fig7. C - VDS 5000 4500 4000 Frequency = 1MHz Fig8. Qg- VGS 12 Gate - Source Voltage VGS (V) ID= 19A VDS = 160V VDS = 100V VDS = 40V 10 8 6 4 2 0 0 10 Capacitance (pF) 3500 3000 2500 2000 1500 1000 500 0 10-1 100 101 Crss Coss Ciss 20 30 40 Drain - Source Voltage VDS (V) Gate - Charge Qg (nC) Fig9. Safe Operation Area (KHB019N20P1) 2 Fig10. Safe Operation Area (KHB019N20F1, KHB019N20F2) 102 Operation in this area is limited by RDS(ON) Operation in this area is limited by RDS(ON) Drain Current ID (A) Drain Current ID (A) 10 100s 10 s 101 1ms 10ms 10 1 100 s 1 ms 100 Tc= 25 C Tj = 150 C 10-1 Single nonrepetitive pulse DC 10 0 10 ms 100 101 102 10 -1 Tc= 25 C Tj = -150 C Single nonrepetitive pulse DC 100 101 102 Drain - Source Voltage VDS (V) Drain - Source Voltage VDS (V) Fig11. ID - Tj 20 Drain Current ID (A) 15 10 5 0 25 50 75 100 125 150 Junction Temperature Tj ( C ) 2007. 5. 10 Revision No : 0 4/7 KHB019N20P1/F1/F2 Fig12. Transient Thermal Response Curve Normalized Transient Thermal Resistance 100 Duty=0.5 0.2 10-1 0.1 0.05 PDM t1 t2 0.02 0.01 10-2 10-5 Single Pulse - Duty Factor, D= t1/t2 10-3 10-2 10-1 100 101 10-4 TIME (sec) Fig13. Transient Thermal Response Curve Normalized Transient Thermal Resistance 100 Duty=0.5 0.2 10-1 0.1 0.05 PDM 0.02 t2 Single Pulse 10-2 0.01 - Duty Factor, D= t1/t2 10-3 10-2 10-1 100 101 10-5 10-4 TIME (sec) 2007. 5. 10 Revision No : 0 5/7 KHB019N20P1/F1/F2 Fig14. Gate Charge VGS 10 V ID Fast Recovery Diode 0.8 VDSS 1.0 mA ID Q VDS VGS Qgs Qgd Qg Fig15. Single Pulsed Avalanche Energy EAS= 1 LIAS2 2 BVDSS BVDSS - VDD BVDSS L IAS 50V 25 VDS 10 V ID(t) VGS VDD VDS(t) Time Fig16. Resistive Load Switching tp VDS 90% RL 0.5 VDSS 25 VDS 10V VGS 10% tf td(on) ton tr td(off) toff VGS 2007. 5. 10 Revision No : 0 6/7 KHB019N20P1/F1/F2 Fig17. Source - Drain Diode Reverse Recovery and dv /dt DUT IF VDS Body Diode Forword Current ISD (DUT) IRM di/dt IS Body Diode Reverse Current 0.8 VDSS VDS (DUT) driver Body Diode Recovery dv/dt VSD VDD 10V VGS Body Diode Forword Voltage drop 2007. 5. 10 Revision No : 0 7/7 |
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