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CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
Spec. No. : C815I3 Issued Date : 2005.03.29 Revised Date : 2009.02.04 Page No. : 1/ 6
BTB1205I3
Features
* Low VCE(sat), VCE(sat)=-0.38 V (typical), at IC / IB = -3A / -60mA * Excellent DC current gain characteristics * Fast switching speed * Large current capacity * RoHS compliant package
BVCEO IC RCESAT
-20V -5A 127m typ.
Applications
* Strobe, voltage regulators, relay drivers, lamp drivers
Symbol
BTB1805I3
Outline
TO-251
BBase CCollector EEmitter
BCE
BTB1205I3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Power Dissipation (TA=25) Power Dissipation (TC=25) Junction Temperature Storage Temperature
Note : 1. Single Pulse Pw=10ms
Spec. No. : C815I3 Issued Date : 2005.03.29 Revised Date : 2009.02.04 Page No. : 2/ 6
Symbol VCBO VCEO VEBO IC ICP IB Pd Pd Tj Tstg
Limits -25 -20 -5 -5 -8 (Note 1)
-0.5
Unit V V V A A W C C
1 10 150 -55~+150
Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE *hFE fT Cob Min. -25 -20 -5 190 60 Typ. -380 -1.0 320 60 Max. -0.5 -0.5 -500 -1.3 380 Unit V V V A A mV V MHz pF Test Conditions IC=-10A, IE=0 IC=-1mA, IB=0 IE=-10A, IC=0 VCB=-20V, IE=0 VEB=-4V, IC=0 IC=-3A, IB=-60mA IC=-3A, IB=-60mA VCE=-2V, IC=-0.5A VCE=-2V, IC=-4A VCE=-5V, IC=-200mA, f =100MHz VCB=-10V, f =1MHz
*Pulse Test : Pulse Width 380s, Duty Cycle2%
Ordering Information
Device BTB1205I3 Package TO-251 (RoHS compliant) Shipping 80 pcs / tube, 50 tubes / box Marking B1205
BTB1205I3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
Saturation Voltage---(mV)
VCE=2V
Spec. No. : C815I3 Issued Date : 2005.03.29 Revised Date : 2009.02.04 Page No. : 3/ 6
Saturation Voltage vs Collector Current
10000 VCESAT 1000
Current Gain---HFE
IC=100IB
IC=40IB
IC=50IB
100
VCE=1V
100
IC=30IB
10 1 10 100 1000 10000 Collector Current---IC(mA)
10 1 10 100 1000 10000 Collector Current---IC(mA)
Saturation Voltage vs Collector Current
10000 Saturation Voltage---(mV) Collector Current---IC(A)
VBESAT@IC=10IB
Output Characteristics
7
IB=50mA
6 5 4 3 2 1
IB=0 IB=25mA IB=20mA IB=15mA IB=10mA IB=5mA
1000
100 1 10 100 1000 Collector Current---IC(mA) 10000
0 0 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 6
Output Characteristics
4 3.5
IB=20mA
Power Derating Curves
12
3 2.5 2 1.5 1 0.5 0 0
IB=10mA IB=6mA IB=4mA IB=2mA IB=0
Power Dissipation---PD(W)
Collector Current---IC(A)
10 8 6 4 2 0
No heat sink
1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V)
6
0
50 100 150 Ambient Temperature---TA()
200
BTB1205I3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves(Cont.)
On Voltage vs Collector Current
10000
VBEON@VCE=2V
Spec. No. : C815I3 Issued Date : 2005.03.29 Revised Date : 2009.02.04 Page No. : 4/ 6
On Voltage---(mV)
1000
100 1 10 100 1000 Collector Current---IC(mA) 10000
BTB1205I3
CYStek Product Specification
CYStech Electronics Corp.
Recommended wave soldering condition
Product Pb-free devices Peak Temperature 260 +0/-5 C
Spec. No. : C815I3 Issued Date : 2005.03.29 Revised Date : 2009.02.04 Page No. : 5/ 6
Soldering Time 5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature Average ramp-up rate (Tsmax to Tp) Preheat -Temperature Min(TS min) -Temperature Max(TS max) -Time(ts min to ts max) Time maintained above: -Temperature (TL) - Time (tL) Peak Temperature(TP) Time within 5C of actual peak temperature(tp) Ramp down rate Time 25 C to peak temperature
Sn-Pb eutectic Assembly 3C/second max. 100C 150C 60-120 seconds 183C 60-150 seconds 240 +0/-5 C 10-30 seconds 6C/second max. 6 minutes max.
Pb-free Assembly 3C/second max. 150C 200C 60-180 seconds 217C 60-150 seconds 260 +0/-5 C 20-40 seconds 6C/second max. 8 minutes max.
BTB1205I3
CYStek Product Specification
CYStech Electronics Corp.
TO-251 Dimension
Spec. No. : C815I3 Issued Date : 2005.03.29 Revised Date : 2009.02.04 Page No. : 6/ 6
A
B
C D
Marking:
B1205
F 3 E K 2 1 J G
I H
Style: Pin 1.Base 2.Collector 3.Emitter 3-Lead TO-251 Plastic Package CYStek Package Code: I3
*: Typical
DIM A B C D E F
Inches Min. Max. 0.0177 0.0217 0.0354 0.0591 0.0177 0.0236 0.0866 0.0945 0.2441 0.2677 0.2677 0.2835
Millimeters Min. Max. 0.45 0.55 0.90 1.50 0.45 0.60 2.20 2.40 6.20 6.80 6.80 7.20
DIM G H I J K
Inches Min. Max. 0.2559 *0.1811 0.0449 0.0346 0.2047 0.2165
Millimeters Min. Max. 6.50 *4.60 1.14 0.88 5.20 5.50
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead :KFC ; pure tin plated * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTB1205I3
CYStek Product Specification

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