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Datasheet File OCR Text: |
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3514 DESCRIPTION *High Collector-Emitter Breakdown Voltage: V(BR)CEO= 180V(Min) *Good Linearity of hFE *Complement to Type 2SA1383 APPLICATIONS *Adudio frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE 180 180 5.0 0.1 1.5 10 UNIT .cn mi e V V V A IC Collector Current-Continuous Collector Power Dissipation@ Ta=25 PC Collector Power Dissipation@TC=25 W TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3514 TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 50mA; IB= 5mA 0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 50mA; IB= 5mA 1.5 V ICBO Collector Cutoff Current VCB= 180V; IE= 0 1.0 A IEBO Emitter Cutoff Current VEB= 3.0V; IC=0 1.0 A hFE-1 DC Current Cain IC= 1mA; VCE= 5V 90 hFE-2 DC Current Cain IC= 10mA; VCE= 5V fT Current-Gain--Bandwidth Product COB Output Capacitance hFE-2 Classifications Q 100-200 P w w scs .i w IC= 20mA; VCE= 10V IE= 0; VCB= 10V; ftest= 1.0MHz .cn mi e 100 320 200 MHz 3.2 pF 160-320 isc Websitewww.iscsemi.cn 2 |
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