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Preliminary Datasheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS General Description The AZ7500F is a voltage mode pulse width modulation switching regulator control circuit designed primarily for power supply control. The AZ7500F consists of a reference voltage circuit, two error amplifiers, an on-chip adjustable oscillator, a dead-time control (DTC) comparator, a pulse-steering control flip-flop, and an output control circuit. The precision of voltage reference (VREF) is improved up to 1% through trimming and this provides a better output voltage regulation. The AZ7500F provides for pushpull or single-ended output operation, which can be selected through the output control. The AZ7500F is available in standard packages of DIP16 and SOIC-16. AZ7500F Features * * * * * * Stable 5V Reference Voltage Trimmed to 1.0% Accuracy Uncommitted Output TR for 200mA Sink or Source Current Single-End or Push-Pull Operation Selected by Output Control Internal Circuitry Prohibits Double Pulse at Either Output Complete PWM Control Circuit with Variable Duty Cycle On-Chip Oscillator With Master or Slave Operation Applications * * * SMPS Back Light Inverter Charger SOIC-16 DIP-16 Figure 1. Package Types of AZ7500F Oct. 2009 Rev. 1. 2 1 BCD Semiconductor Manufacturing Limited Preliminary Datasheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS AZ7500F Pin Configuration M Package (SOIC-16) 1IN + 1IN FEEDBACK DTC CT RT GND C1 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 P Package (DIP-16) 2IN + 2IN REF OUTPUT CTRL VCC C2 E2 E1 1IN + 1IN FEEDBACK DTC CT RT GND C1 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 2IN + 2IN REF OUTPUT CTRL VCC C2 E2 E1 Figure 2. Pin Configuration of AZ7500F (Top View) Output Function Control Table Signal for Output Control VI = GND VI = VREF Output Function Single-ended or parallel output Normal push-pull operation Functional Block Diagram OUTPUT CTRL RT CT 6 5 13 Oscillator 8 Q1 Pulse-Steering Flip-Flop C1 Dead-Time Control Comparator DTC 4 0.12V 9 D CK E1 C2 + 11 Q2 Error Amplifier 1 1IN + 1IN 1 2 + + PWM Comparator 10 E2 12 2IN + 2IN 16 15 Error Amplifier 2 VCC REF GND + 0.7mA Reference Regulator 14 7 FEEDBACK 3 Figure 3. Functional Block Diagram of AZ7500F Oct. 2009 Rev. 1. 2 2 BCD Semiconductor Manufacturing Limited Preliminary Datasheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS Ordering Information AZ7500F AZ7500 G1: Green Circuit Type TR: Tape and Reel Blank: Tube Reference Voltage F: 5V Package M: SOIC-16 P: DIP-16 Package SOIC-16 DIP-16 Temperature Range Part Number AZ7500FM-G1 Marking ID AZ7500FM-G1 AZ7500FM-G1 AZ7500FP-G1 Packing Type Tube Tape & Reel Tube -40 to 85oC AZ7500FMTR-G1 AZ7500FP-G1 BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant and green. Oct. 2009 Rev. 1. 2 3 BCD Semiconductor Manufacturing Limited Preliminary Datasheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS Absolute Maximum Ratings (Note 1) Parameter Supply Voltage (Note 2) Amplifier Input Voltage Collector Output Voltage Collector Output Current Package Thermal Impedance (Note 3) Lead Temperature 1.6mm from case for 10 seconds Storage Temperature Range ESD Rating (Machine Model) TSTG Symbol VCC VI VO IO RJA M Package P Package 260 -65 to 150 200 Value 40 -0.3 to VCC + 0.3 40 250 73 67 Unit V V V mA oC/W oC o AZ7500F C V Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Note 2: All voltage values are with respect to the network ground terminal. Note 3: Maximum power dissipation is a function of TJ(max), RJA and TA. The maximum allowable power dissipation at any allowable ambient temperature is PD = ( TJ(max) - TA )/RJA. Operating at the absolute maximum TJ of 150oC can affect reliability. Recommended Operating Conditions Parameter Supply Voltage Collector Output Voltage Collector Output Current (Each Transistor) Amplifier Input Voltage Current Into Feedback Terminal Reference Output Current Timing Capacitor Timing Resistor Oscillator Frequency PWM Input Voltage (Pin 3, 4, 14) Operating Free-Air Temperature TA Push-pull Mode Single-ended Mode Symbol VCC VC1, VC2 IC1, IC2 VI IFB IREF CT RT fOSC 0.00047 1.8 1 0.3 -40 0.001 30 40 0.3 Min 7 Typ 15 30 Max 36 36 200 VCC - 2 0.3 10 10 500 300 500 5.3 85 Unit V V mA V mA mA F K kHz V oC Oct. 2009 Rev. 1. 2 4 BCD Semiconductor Manufacturing Limited Preliminary Datasheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS Electrical Characteristics Parameter Reference Section Output Reference Voltage Line Regulation Load Regulation Short-Circuit Output Current Oscillator Section CT=0.01F, RT=12K Oscillator Frequency fOSC CT=0.01F, RT=12K, TA= -40 to 85 C Frequency Change with Temperature Dead-Time Control Section Input Bias Current Maximum Duty Cycle Input Threshold Voltage Error-Amplifier Section Input Offset Voltage Input Offset Current Input Bias Current Common-Mode Input Voltage Range Open-Loop Voltage Gain Unity-Gain Bandwidth Common-Mode Rejection Ratio Output Sink Current (Feedback) Output Source Current (Feedback) VIO IIO IBIAS VCM GVO BW CMRR ISINK ISOURCE VID = -15mV to -5V, V3 = 0.7V VID=15mV to 5V V3 = 3.5V 65 -0.3 2 V3 = 2.5V V3 = 2.5V V3 = 2.5V VCC=7V to 36V VO =0.5V to 3.5V -0.3 70 95 650 80 -0.7 2 25 0.2 10 250 1 VCC-2 mV nA A V dB KHz dB mA mA IBIAS D(MAX) VITH VCC=15V, V4= 0 to 5.25V VCC=15V, V4= 0V, Pin 13= VREF Zero Duty Cycle Maximum Duty Cycle 0 45 3 3.3 -2 -10 A % V f /T CT=0.01F, RT=12K, TA= -40 to 85oC o AZ7500F TA = 25oC, VCC=20V, f=10KHz unless otherwise noted. Symbol Conditions IREF=1mA IREF=1mA, TA= -40 to 85 C VCC = 7V to 36V IREF=1mA to 10mA VREF = 0V 10 9.9 9.7 o Min 4.95 4.9 Typ 5.0 5.0 2 1 35 10.7 Max 5.05 5.1 25 15 50 11.5 12.7 Unit V V mV mV mA VREF RLINE RLOAD ISC KHz 1 % Oct. 2009 Rev. 1. 2 5 BCD Semiconductor Manufacturing Limited Preliminary Datasheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS Electrical Characteristics (Continued) Parameter PWM Comparator Section Input Threshold Voltage Input Sink Current Output Section Common Emitter Output Saturation Voltage Emitter Follower VCE (SAT) VCC (SAT) IC (OFF) IE(OFF) ICC VE = 0V, IC =200mA VCC = 15V, IE = -200mA VCE = 36V, VCC=36V VCC = VC = 36V, VE = 0 Pin 6 = VREF, VCC=15V Common Emitter Common Collector Common Emitter Common Collector 6 1.1 1.5 2 1.3 V 2.5 100 -100 10 A A mA VITH ISINK Zero duty cycle V3 = 0.7V -0.3 4 -0.7 4.5 V mA Symbol Conditions Min Typ Max Unit AZ7500F Collector Off-State Current Emitter Off-State Current Total Device Supply Current Output Switching Characteristics Rise Time Fall Time tR tF 100 25 200 100 ns ns Oct. 2009 Rev. 1. 2 6 BCD Semiconductor Manufacturing Limited Preliminary Datasheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS Parameter Measurement information VCC = 20V 12 4 Test Inputs 3 12K 6 5 0.01uF 1 2 16 15 13 50K VCC DTC FEEDBACK RT CT 1IN+ 1IN2IN+ 2INOUTPUT CTRL GND 7 REF 14 C1 E1 C2 E2 8 9 11 10 Output 2 150 4W 150 4W Output 1 AZ7500F Test Circuit Voltage at C1 Voltage at C2 Voltage at CT VCC 0V VCC 0V Threshold Voltage DTC 0V Threshold Voltage FEEDBACK 0.7V Duty Cycle 0% MAX 0% Voltage Waveforms Figure 4. Operational Test Circuit and Waveforms Oct. 2009 Rev. 1. 2 7 BCD Semiconductor Manufacturing Limited Preliminary Datasheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS Parameter Measurement information (Continued) + Amplifier Under Test FEEDBACK AZ7500F VI + Vref Other Amplifier Figure 5. Error Amplifier Characteristics 20V 68 4W Each Output Circuit Output CL = 15pF (See Note A) 90% tf tr 90% 10% 10% Note A: CL includes probe and jig capacitance. Figure 6. Common-Emitter Configuration 20V Each Output Circuit 90% 90% Output CL = 15pF (See Note A) 68 4W 10% tr 10% tf Note A: CL includes probe and jig capacitance. Figure 7. Emitter-Follower Configuration Oct. 2009 Rev. 1. 2 8 BCD Semiconductor Manufacturing Limited Preliminary Datasheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS Typical Performance Characteristics AZ7500F 100 90 80 VCC=20V VO=3V TA=25 C o Voltage Gain (dB) 70 60 50 40 30 20 10 0 1 10 100 1k 10k 100k 1M Frequency (Hz) Figure 8. Error Amplifier Small-Signal Voltage Gain vs. Frequency Oct. 2009 Rev. 1. 2 9 BCD Semiconductor Manufacturing Limited Preliminary Datasheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS Typical Application (VI=10V to 40V) 1mH 2A (VO=5V, IO=1A) AZ7500F VI(+) 47 KSA1010 VO 150 0.1 1M 5.1k 12 VCC 11 C2 8 C1 3 FEED BACK 2 1INREF 2IN1IN+ 2IN+ 14 15 1 16 50 + 10V 5.1k 5.1k + 50 10V + 50 50V AZ7500F DTC GND 4 7 E1 9 OUTPUT CTRL 13 E2 10 RT 6 47k CT 5 150 + 0.001 GND 0.1 VI(-) Figure 9. Pulse Width Modulated Step-Down Converter Oct. 2009 Rev. 1. 2 10 BCD Semiconductor Manufacturing Limited Preliminary Datasheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS Mechanical Dimensions SOIC-16 Unit: mm(inch) AZ7500F 1.350(0.053) 1.750(0.069) 7 0.330(0.013) 0.510(0.020) B 1.250(0.049) 1.650(0.065) 7 0.250(0.010) A 20:1 0.400(0.016) 1.270(0.050) 9.800(0.386) 10.200(0.402) 0 8 R0.200(0.008) R0.200(0.008) 1.270(0.050) BSC 0.170(0.007) 0.250(0.010) 5.800(0.228) 6.240(0.246) 3.800(0.150) 4.040(0.159) 9 .5 0.050(0.002) 0.250(0.010) 0.200(0.008) 0.250(0.010) C-C 50:1 8 B 20:1 C 0.200(0.008) S 1.000(0.039) Depth 0.200(0.008) C 1.000(0.039) 3 7 8 8 A 0.400(0.016)x45 Note: Eject hole, oriented hole and mold mark is optional. Oct. 2009 Rev. 1. 2 11 BCD Semiconductor Manufacturing Limited Preliminary Datasheet PULSE-WIDTH-MODULATION CONTROL CIRCUITS Mechanical Dimensions (Continued) DIP-16 Unit: mm(inch) AZ7500F Note: Eject hole, oriented hole and m old mark is optional. Oct. 2009 Rev. 1. 2 12 BCD Semiconductor Manufacturing Limited BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifiBCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. other rights nor the rights of others. MAIN SITE MAIN SITE - Headquarters BCD Semiconductor Manufacturing Limited - Wafer Fab BCD Semiconductor Manufacturing Limited Shanghai Design Group - IC SIM-BCD Semiconductor Manufacturing Co., Ltd. 800 Yi Shan Road, Shanghai 200233, China Corporation Advanced Analog Circuits (Shanghai) Tel: +86-21-6485 900, Yi Shan Road, Shanghai 200233, China 8F, Zone B, 1491, Fax: +86-21-5450 0008 Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 USA Office BCD Semiconductor Corp. USA Office 30920 Huntwood Ave. Hayward, BCD Semiconductor Corporation CA 94544, USA 30920 Huntwood Ave. Hayward, Tel 94544, U.S.A CA : +1-510-324-2988 Fax: +1-510-324-2788 Tel : +1-510-324-2988 Fax: +1-510-324-2788 REGIONAL SALES OFFICE Shenzhen Office REGIONAL SALES OFFICE BCD Semiconductor Manufacturing Limited - Wafer Fab No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China Shanghai SIM-BCD Semiconductor Manufacturing Limited Tel: +86-21-24162266, Fax: +86-21-24162277 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 Taiwan Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office BCD Taiwan Office (Taiwan) Company Limited Semiconductor Shenzhen Office Room E, SIM-BCD Semiconductor 3rd Fuzhong Road, Futian District, Shenzhen, 4F, 298-1, Rui Guang Road,(Taiwan) Company Limited Shanghai 5F, Noble Center, No.1006,Manufacturing Co., Ltd. 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