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| MMBTSA1256 PNP Silicon Epitaxial Planar Transistor for use in FM RF amplifier, mixer, oscillators, converters and IF amplifiers applications The transistor is subdivided into three groups, R, Q and Y according to its DC current gain. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC Ptot Tj TS Value 30 20 5 30 200 125 - 55 to + 125 Unit V V V mA mW O C C O Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 6 V, -IC = 1 mA Current Gain Group R Q Y Symbol hFE hFE hFE -ICBO -IEBO fT Cre NF Min. 60 90 135 150 Typ. 230 2.5 Max. 120 180 270 0.1 0.1 1.7 Unit A A MHz pF dB Collector Cutoff Current at -VCB = 10 V Emitter Cutoff Current at -VEB = 4 V Transition Frequency at -VCE = 6 V, -IC = 1 mA Reverse Transfer Capacitance at -VCB = 6 V, f = 1 MHz Noise Figure at -VCE = 6 V, -IC = 1 mA, f = 100 MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 03/08/2006 MMBTSA1256 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 03/08/2006 |
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