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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors D45H Series DESCRIPTION *Low Saturation Voltage *Fast Switching Speeds *Complement to Type D44H Series APPLICATIONS *Designed for general pourpose power amplification and switching such as output or driver stages in applications such as switching regulators,converters and power amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER D45H8 D45H10,11 VEBO IC ICM PC Tj Tstg Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range VALUE -60 V -80 -5 -10 -20 -50 150 -55~150 V A A W UNIT VCEO Collector-Emitter Voltage THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance,Junction to Ambient MAX 2.5 75 UNIT /W /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER D44H10 VCE(sat) Collector-Emitter Saturation Voltage D44H8,11 Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current D44H10 hFE-1 DC Current Gain D44H8,11 D44H10 hFE-2 DC Current Gain D44H8,11 Output Capacitance Current-Gain--Bandwidth Product VCB= -10V,f= 0.1MHz IC=-0.5A;VCE=-10V;ftest=20MHz IC= -4A ; VCE= -1V 40 IC= -2A ; VCE= -1V 60 20 IC= -8A ;IB= -0.4 A IC= -8A ;IB= -0.8 A VCE=Rated VCEO; VEB= -5V; IC= 0 35 CONDITIONS IC= -8A ;IB= -0.8 A MIN D45H Series TYP MAX UNIT -1 V VBE(sat) ICES IEBO -1.5 -10 -100 V A A COB fT 130 50 pF MHz Switching Times Storage Time IC= -5A; IB1= -IB2= -0.5A VCC= 20V Fall Time 0.14 s 0.5 s ts tf isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors D45H Series isc Websitewww.iscsemi.cn |
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