 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1860 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= -150V(Min) *Good Linearity of hFE *Complement to Type 2SC4886 APPLICATIONS *Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -14 A IB Base Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature -3 A PC 80 W TJ 150 Tstg Storage Temperature -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA1860 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA ; IB= 0 -150 V VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A B -2.0 V ICBO Collector Cutoff Current VCB= -150V ; IE=0 -100 A IEBO Emitter Cutoff Current VEB= -5V; IC=0 -100 A hFE DC Current Gain IC= -5A ; VCE= -4V 50 COB Output Capacitance IE= 0; VCB= -10V; f= 1MHz 400 pF fT Current-Gain--Bandwidth Product IE= 2A ; VCE= -12V 50 MHz Switching Times ton Turn-On Time IC= -5A; IB1= -IB2= -0.5A; VCC= -60V; RL= 12 0.25 s tstg Storage Time 0.85 s tf Fall Time 0.2 s hFE Classifications O 50-100 P 70-140 Y 90-180 isc Websitewww.iscsemi.cn 2 |
Price & Availability of 2SA1860
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |