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| STG3P3M25N60 3 Phase inverter IGBT - SEMITOP(R)3 module PRELIMINARY DATA General features Type VCES 600V VCE(sat)(Max) @ IC=7A, IC@80C Ts=25C < 2.5V 25A STG3P3M25N60 N-channel very fast PowerMESHTM IGBT Lower on-voltage drop (Vcesat) Lower CRES / CIES ratio (no cross-conduction susceptbility) Very soft ultra fast recovery antiparallel diode High frequency operation up to 70 KHz New generation products with tighter parameter distribution One screw mounting Compact design Semitop(R)3 is a trademark of Semikron SEMITOP(R)3 Internal schematic diagram Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBT, with outstanding performances. Applications High frequency inverters Motor drivers Order codes Sales Type STG3P3M25N60 Marking G3P3M25N60 Package SEMITOP(R)3 Packaging SEMIBOX May 2006 Rev1 1/12 www.st.com 12 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Contents STG3P3M25N60 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Typical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 4 5 Test circuit ................................................ 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 STG3P3M25N60 Electrical ratings 1 Electrical ratings Table 1. Symbol VCES IC(1) IC(1) VGE ICM(2) ICM IF PTOT VISO Tstg Tj Absolute maximum ratings Parameter Collector-emitter voltage (VGS = 0) Collector current (continuous) at Ts = 25C Collector current (continuous) at Ts = 80C Gate-emitter voltage TP<1ms; Ts=25C TP<1ms; Ts=80C Diode RMS forward current at Ts = 25C Total dissipation at Ts = 25C Insulation withstand voltage A.C. (t=1min/sec; Ts=25C) Storage temperature Operating junction temperature Value 600 50 25 20 100 50 19 96 2500/3000 - 40 to 125 - 40 to 150 Unit V A A V A A A W V C C 1. Calculated value 2. Pulse width limited by max. junction temperature Table 2. Symbol Rth(j-s) Thermal resistance (for single IGBT) Parameter Thermal resistance junction-sink(1) Max. Value 1.3 Unit K/W 1. Resistance value with conductive grease applied and maximum mounting torque equal to 2Nm 3/12 Electrical characteristics STG3P3M25N60 2 Electrical characteristics (Ts=25C unless otherwise specified) Table 3. Symbol VBR(CES) ICES IGES VGE(th) VCE(sat) IGBT-Inverter parameters Parameter Collector-emitter breakdown voltage Collector cut-off Current (VGE = 0) Gate-emitter leakage current (VCE = 0) Gate threshold voltage Test condictions IC= 1mA, VGE= 0 VCE= Max rating, ts= 25c vce=max rating, Ts= 125C VGE= 20V , VCE= 0 VCE= VGE, IC= 250A 3.75 1.85 1.7 Min. 600 10 1 100 5.75 2.5 Typ. Max. Unit V A mA nA V V V Collector-emitter saturation VGE= 15V, IC= 20A voltage VGE=15V, IC= 20A, Ts=125C Table 4. Symbol gfs (1) Cies Coes Cres Qg Qge Qgc Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Test condictions VCE = 15V, IC= 20A VCE = 25V, f = 1MHz, VGE = 0 VCE = 390V, IC = 20A, VGE = 15V, (see Figure 8) Min. Typ. 15 2200 225 50 100 16 45 140 Max. Unit S pF pF pF nC nC nC 1. Pulsed: pulse duration=300s, duty cycle 1.5% 4/12 STG3P3M25N60 Electrical characteristics Table 5. Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf Switching on/off Parameter Turn-on delay time Current rise time Turn-on current slope Test condictions VCC = 300V, IC = 20A , RG= 33 VGE= 15V, Ts= 25C (see Figure 9) Turn-on delay time Current rise time Turn-on current slope VCC = 300V, IC = 20A , RG= 33 VGE= 15V, Ts=125C (see Figure 9) Off voltage rise time Turn-off delay time Current fall time VCC = 300V, IC = 20A , RG= 33 VGE= 15V, Ts=25C (see Figure 9) Off voltage rise time Turn-off delay time Current fall time VCC = 300V, IC = 20A , RG= 33 VGE= 15V, Ts=125C (see Figure 9) 66 150 130 ns ns ns 28 100 75 ns ns ns 31 11.5 1500 ns ns A/s Min. Typ. 31 11 1600 Max. Unit ns ns A/s Table 6. Symbol Eon(1) Eoff(2) Ets Eon(1) Eoff(2) Ets Switching energy (inductive load) Parameter Turn-on switching losses Turn-off switching losses Total switching losses Test condictions VCC = 300V, IC = 20A , RG= 33 VGE= 15V, Ts=25C (see Figure 9) Turn-on switching losses Turn-off switching losses Total switching losses VCC = 300V, IC = 20A RG= 33 VGE= 15V, , Ts= 125C (see Figure 9) 450 770 1220 J J J Min. Typ. 220 330 550 Max. Unit J J J 1. Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25C and 125C) 2. Turn-off losses include also the tail of the collector current 5/12 Electrical characteristics STG3P3M25N60 Table 7. Symbol Vf trr ta Qrr Irrm S trr ta Qrr Irrm S Collector-emitter diode Parameter Forward on-voltage Reverse recovery time If = 20A ,VR = 40V, Reverse recovery charge Ts = 25C, di/dt = 100 A/s Reverse recovery current (see Figure 4) Softness factor of the diode Reverse Recovery Time If = 20A ,VR = 40V, Reverse recovery charge Ts =125C, di/dt = 100A/s Reverse recovery current (see Figure 4) Softness factor of the diode Test condictions If = 10A If = 10A, Ts = 125C Min. Typ. 1.3 1.0 44 32 66 3 0.375 88 56 237 5.4 0.57 Max. 2.0 Unit V V ns ns nC A ns ns nC A Table 8. Symbol Rts Temperature sensor Parameter Equivalent resistance Condictions 5%, Tr=25 (100)C Min. Typ. Max. 5000 (493) Unit 6/12 STG3P3M25N60 Electrical characteristics 2.1 Typical characteristics (curves) Figure 1. Output characteristics at Ts=25C Figure 2. Output characteristics at Ts=125C Figure 3. Capacitance variation Figure 4. Gate charge vs gate-emitter voltage Figure 5. Total switching losses vs gate Figure 6. resistance Total switching losses vs collector current 7/12 Test circuit STG3P3M25N60 3 Figure 7. Test circuit Test Circuit for Inductive Load Switching Figure 8. Gate charge test circuit Figure 9. Switching Waveform Figure 10. Diode Recovery Time Waveform 8/12 STG3P3M25N60 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/12 Package mechanical data STG3P3M25N60 SEMITOP(R)3 mechanical data Dim A A1 A2 A3 ob ob1 D D2 E E1 E2 e e1 e2 e3 f L L1 L2 L3 oP oP1 op2 R mm Min 15.30 15.23 Typ Max 15.70 15.63 15.50 15.43 10.50 10 1.50 1.60 54.70 55 52.50 30.70 31 22.55 22.75 28.50 3.90 4 2 2.90 3 5.40 5.50 2.50 3.43 3.50 11.80 12 5.20 4.30 4.40 12 14.50 1 SEMITOP(R)3 is a trademark of SEMIKRON 55.30 31.30 23 4.10 3.10 5.60 12.20 4.50 10/12 STG3P3M25N60 Revision history 5 Revision history Table 9. Date 29-May-2006 Revision history Revision 1 Initial release. Changes 11/12 STG3P3M25N60 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT DESIGNED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 12/12 |
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