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ST 2SD966
NPN Silicon Epitaxial Planar Transistor for low-frequency power amplification and stroboscope. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25OC) Symbol Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Peak Collector Current Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO ICP IC Pc Tj TS Value 40 20 7 8 5 1 150 -55 to +150 Unit V V V A A W
O O
C C
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 07/12/2002
ST 2SD966
Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=2V, IC=0.5A P Q R at VCE=2V, IC=2A Collector Cutoff Current at VCB=10V Emitter Cutoff Current at VEB=7V Collector Output Capacitance at VCB=20V,f=1.0MHz Collector to Emitter Voltage at IC=1mA Emitter to Base Voltage at IE=10A Collector to Emitter Saturation Voltage at IC=3A,IB=0.1A Transition Frequency at VCB=6V, IE=-50mA,f=200MHz fT 150 MHz VCE(sat) 1 V VEBO 7 V VCEO 20 V Cob 50 pF IEBO 0.1 A ICBO 0.1 A hFE hFE hFE hFE 120 230 340 150 250 380 600 Min. Typ. Max. Unit
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 07/12/2002
ST 2SD966
Pc-Ta
1.2
Collector power dissipation Pc (W)
I C-VCE
2.4 Ta=25o C I B=7mA 6mA 6
I C-VBE
VCE=2V 25o C
1.0
2.0
5 Ta=75o C
Collector Current Ic (A)
-25o C
0.8
Collector Current Ic (A)
1.6
5mA 4mA 3mA
4
0.6
1.2
3
0.4
0.8 2mA 0.4 1mA
2
0.2
1
0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (o C)
0 0 0.4 0.8 1.2 1.6 2.0 2.4 Collector to emitter voltage VCE (V)
0 0 0.4 0.8 1.2 1.6 2.0 Base to emitter voltage VBE (V)
(v)
VCE(sat)-IC
10 3 1 0.3 0.1 0.03 0.01 0.003 0.001 0.01 0.03 Ta=75o C 25o C -25o C I C/IB=30
Forward current transfer ratio h FE
h FE-IC
600 500
Transition frequency fT (MHz)
fT-IE
VCE=2V 400 350 300 250 200 150 100 50 0 -0.01 -0.03 -0.1 -0.3 VCB=6V Ta=25 oC
Collector to emitter saturation voltage VCE(sat)
400 Ta=75o C 300 25o C -25 C 200 100
o
0.1
0.3
1
3
10
0 0.01 0.03
0.1
0.3
1
3
10
-1
-3
-10
Collector current Ic (A)
Collector current Ic (A)
Emitter current I E (A)
Cob-VCB
100
Collector output capacitance Cob (pF)
I E=0 f=1MHz o Ta=25 C
80
60
40
20
0 1 3 10 30 100
Collector to base voltge VCB (V)
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 07/12/2002

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