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| 30 20 10V 3V 4V Vgs =2V 15 Vgs=5V VDS=5V 20 Id(A) Id(A) 10 Vgs =1.5V 10 5 125C 125C 25C 25C 0 0 1 2 3 4 5 Vds(Volts) Figure 1: On-Regions Characteristi cs 0 0.0 0.5 1.0 1.5 2.0 2.5 Vgs(Volts) Figure 2: Transfer Characteristics 50 Vgs=1.8V 1.6 Vgs=2.5V ID=3.5A Id=4A 1.4 Vgs=4.5V Id=5A 270 Normalize ON-Resistance Rds(on) (m:) 40 Vgs=2.5V 30 Vgs=4.5V 20 Vgs=10V 10 0 2 4 6 8 10 1.7 Vgs=10V 3.6 ID=3.8A Id=6A 1.2 Vgs=1.8V Id=2A ID=1A 1.0 0.8 0 25 50 75 100 125 13 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 80 70 1E+01 ID=3.8A Id=6A 1E+00 125C 1E-01 125C Rds(on)(m:) 60 50 40 30 20 10 0 2 4 125C Is(A) 25C 1E-02 1E-03 1E-04 25C 25C 1E-05 6 8 0.0 0.2 0.4 0.6 0.8 1.0 Vsd(Volts) Figure 6: Body-Diode Characteristics Vgs(Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 5 Vds=10V 4 VDS=15V ID=3.8A 1400 Id=6A 1200 Capacitance (pF) 1000 800 600 400 200 0 Crss 0 Ciss Vgs(Volts) 3 2 Coss 1 Coss Crss 0 0 2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 20 Vds(Volts) Figure 8: Capacitance Characteristics 270 100 Tj(max)=150C, Ta=25C 15 20 Tj(max)=150C Ta=25C 1.7 3.6 Id (Amps) Power (W) Rds(on) 10 limited 10Ps 100Ps 10 1 DC 1ms 10ms 100m 1s 0.1 10 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 1 100 5 0.1 0 0.001 13 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZTja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=90C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 Pd 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 0.001 0.01 100 1000 |
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