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Datasheet File OCR Text: |
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2750 DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 100V(Min) *High Current Capability *High Power Dissipation APPLICATIONS *Designed for high speed, high current switching industrial applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage ww w scs .i UNIT 150 V 100 V 7 V 15 A 30 A 5 A .cn mi e IC Collector Current-Continuous ICM Collector Current-Peak IB B Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature PC 100 W TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCEO(SUS) VCEX(SUS)1 VCEX(SUS)2 VCE(sat) VBE(sat) ICBO ICER ICEX IEBO hFE-1 hFE-2 PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC= 10A; IB1= 1A; L= 100H IC= 10A; IB1= -IB= 1A; Ta= 125 L= 180H; Clamped IC= 20A; IB1= 2A; IB2= 1A; Ta= 125; L= 180H; Clamped IC= 10A; IB= 1A IC= 10A; IB= 1A VCB= 100V; IE= 0 MIN 100 150 100 2SC2750 TYP. MAX UNIT V V V 0.6 1.5 10 1.0 10 500 10 120 V V A VCE= 100V; RBE= 50; Ta= 125 w w w. VCE= 100V;VBE(off)= -1.5V; VCE= 100V;VBE(off)= -1.5V;Ta=125 VEB= 5V; IC= 0 IC= 5A; VCE= 5V .cn mi cse is 30 20 mA A A IC= 10A; VCE= 5V Switching Times Turn-on Time Storage Time Fall Time IC= 10A, IB1= -IB2= 1A, VCC 50V; RL= 5 1.0 1.5 0.3 s s s ton tstg tf hFE-1 Classifications M 30-60 L 40-80 K 60-120 isc Websitewww.iscsemi.cn 2 |
Price & Availability of 2SC2750
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