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| JMnic Product Specification Silicon PNP Power Transistors 2SA1292 DESCRIPTION With TO-3PN package Low saturation voltage. Fast switching time. Complement to type 2SC3256 APPLICATIONS Various inductance, lamp drivers for electrical equipment. Inverters, converters Power amplifier High-speed switching PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE -80 -60 -5 -15 -20 80 150 -55~150 ae ae UNIT V V V A A W JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-1mA ,IE=0 IC=-1mA ,IB=0 IE=-1mA ,IC=0 IC=-7.5A; IB=-0.375A VCB=-40V; IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-2V IC=-1A ; VCE=-5V 70 100 MIN -80 -60 -5 TYP. 2SA1292 SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCEsat ICBO IEBO hFE fT MAX UNIT V V V -0.4 -100 -100 280 |I |I V A A MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=-6A IB1=- IB2=-0.3A VCC=-20V;RL=3.3| 0.1 0.5 0.1 |I |I |I s s s hFE Classifications Q 70-140 R 100-200 S 140-280 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1292 Fig.2 Outline dimensions(unindicated tolerance:A 0.10 mm) 3 |
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