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APT64GA90B APT64GA90S 900V High Speed PT IGBT TO APT64GA90S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the APT64GA90B poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency. Single die IGBT (R) FEATURES * Fast switching with low EMI * Very Low Eoff for maximum efficiency * Ultra low Cres for improved noise immunity * Low conduction loss * Low gate charge * Increased intrinsic gate resistance for low EMI * RoHS compliant TYPICAL APPLICATIONS * ZVS phase shifted and other full bridge * Half bridge * High power PFC boost * Welding * UPS, solar, and other inverters * High frequency, high efficiency industrial Absolute Maximum Ratings Symbol Vces IC1 IC2 ICM VGE PD SSOA TJ, TSTG TL Parameter Collector Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 100C Pulsed Collector Current Gate-Emitter Voltage 2 Total Power Dissipation @ TC = 25C Switching Safe Operating Area @ TJ = 150C Operating and Storage Junction Temperature Range Lead Temperature for Soldering: 0.063" from Case for 10 Seconds 1 Ratings 900 117 64 193 30 500 193A @ 900V -55 to 150 300 Unit V A V W C Static Characteristics Symbol VBR(CES) VCE(on) VGE(th) ICES IGES TJ = 25C unless otherwise specified Test Conditions VGE = 0V, IC = 1.0mA VGE = 15V, IC = 38A VCE = 900V, VGE = 0V TJ = 25C TJ = 125C 3 TJ = 25C TJ = 125C Parameter Collector-Emitter Breakdown Voltage Collector-Emitter On Voltage Gate Emitter Threshold Voltage Zero Gate Voltage Collector Current Gate-Emitter Leakage Current Min 900 Typ 2.5 2.2 4.5 Max 3.1 6 250 1000 100 Unit V VGE =VCE , IC = 1mA A nA 6 - 2009 052-6325 Rev C VGS = 30V Thermal and Mechanical Characteristics Symbol RJC WT Torque Characteristic Junction to Case Thermal Resistance Package Weight Mounting Torque (TO-247 Package), 4-40 or M3 screw Microsemi Website - http://www.microsemi.com Min - Typ 5.9 Max 0.25 - Unit C/W g in*lbf 10 Dynamic Characteristics Symbol Cies Coes Cres Qg3 Qge Qgc SSOA td(on) tr td(off) tf Eon2 Eoff6 td(on tr td(off) tf Eon2 Eoff6 TJ = 25C unless otherwise specified Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1MHz Gate Charge VGE = 15V VCE= 450V IC = 38A TJ = 150C, RG = 4.74, VGE = 15V, L= 100uH, VCE = 900V Inductive Switching (25C) VCC = 600V VGE = 15V IC = 38A RG = 4.74 TJ = +25C Inductive Switching (125C) VCC = 600V VGE = 15V IC = 38A RG = 4.74 TJ = +125C 18 26 131 104 1192 1088 17 27 181 171 1857 2311 193 APT64GA90B_S Typ 3525 318 53 162 26 64 nC pF Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate- Collector Charge Switching Safe Operating Area Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy Min Max Unit A ns J ns J 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380s, duty cycle < 2%. 3 See Mil-Std-750 Method 3471. 4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the clamping diode. 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein. 052-6325 Rev C 6 - 2009 Typical Performance Curves 100 V GE APT64GA90B_S 300 250 10V 200 150 100 50 0 9V 8V 7V 6V 15V 13V 11V = 15V TJ= 55C TJ= 125C IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 80 TJ= 25C 60 TJ= 150C 40 20 0 0 1 2 3 4 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25C) VGE, GATE-TO-EMITTER VOLTAGE (V) 250s PULSE TEST<0.5 % DUTY CYCLE 160 140 IC, COLLECTOR CURRENT (A) 120 100 80 60 40 20 0 0 16 14 12 10 8 6 4 2 0 0 4 8 12 16 20 24 28 32 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 25C) I = 38A C T = 25C J VCE = 180V VCE = 450V VCE = 720V TJ= -55C TJ= 125C TJ= 25C VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 4 2 4 6 8 10 12 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics 0 20 40 60 80 100 120 140 160 180 GATE CHARGE (nC) FIGURE 4, Gate charge 5 3 IC = 76A IC = 38A 4 3 IC = 76A IC = 38A 2 IC = 13A 1 2 IC = 19A 1 VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE 0 6 8 10 12 14 16 0 0 25 50 75 100 125 150 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage 1.15 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 160 140 IC, DC COLLECTOR CURRENT (A) 120 100 80 60 40 20 0 6 - 2009 25 50 052-6325 Rev C VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE FIGURE 7, Threshold Voltage vs Junction Temperature -50 -25 75 100 125 150 TC, Case Temperature (C) FIGURE 8, DC Collector Current vs Case Temperature Typical Performance Curves 24 td(ON), TURN-ON DELAY TIME (ns) 22 20 18 16 14 12 10 200 td(OFF), TURN-OFF DELAY TIME (ns) VCE = 600V TJ = 25C, or 125C RG = 4.7 L = 100H APT64GA90B_S 160 VGE =15V,TJ=125C 120 VGE =15V,TJ=25C 80 40 VCE = 600V RG = 4.7 L = 100H 0 10 20 30 40 50 60 70 80 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 80 RG = 4.7, L = 100H, VCE = 600V 70 60 0 10 20 30 40 50 60 70 80 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 250 0 200 tr, RISE TIME (ns) tr, FALL TIME (ns) 50 40 30 20 10 0 0 10 20 TJ = 25 or 125C,VGE = 15V 150 TJ = 125C, VGE = 15V 100 TJ = 25C, VGE = 15V 50 30 40 50 60 70 80 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 6000 EOFF, TURN OFF ENERGY LOSS (J) Eon2, TURN ON ENERGY LOSS (J) 5000 4000 3000 2000 1000 0 TJ = 25C TJ = 125C V = 600V CE V = +15V GE R =4.7 G 0 10 20 30 40 50 60 70 80 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 5500 5000 4500 4000 3500 3000 2500 2000 1500 1000 500 0 0 10 20 30 40 50 60 70 80 TJ = 25C TJ = 125C V = 600V CE V = +15V GE R = 4.7 G 0 RG = 4.7, L = 100H, VCE = 600V 0 10 20 30 40 50 60 70 80 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 8000 SWITCHING ENERGY LOSSES (J) 7000 6000 5000 4000 3000 2000 1000 0 0 Eon2,38A Eoff,38A Eon2,19A Eoff,19A Eon2,76A Eoff,76A ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 14, Turn-Off Energy Loss vs Collector Current 6000 SWITCHING ENERGY LOSSES (J) V = 600V CE V = +15V GE R = 4.7 G V = 600V CE = +15V V GE T = 125C J 5000 4000 3000 Eon2,76A Eoff,76A 6 - 2009 Eon2,38A 2000 Eoff,38A 052-6325 Rev C 1000 0 Eon2,19A Eoff,19A 10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs Gate Resistance 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature 0 Typical Performance Curves 10,000 Cies IC, COLLECTOR CURRENT (A) 100 C, CAPACITANCE (pF) 1000 APT64GA90B_S 1,000 10 100 Coes 1 Cres 0 100 200 300 400 500 600 700 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) FIGURE 17, Capacitance vs Collector-To-Emitter Voltage 10 1 10 100 1000 VCE, COLLECTOR-TO-EMITTER VOLTAGE FIGURE 18, Minimum Switching Safe Operating Area 0.1 0.30 ZJC, THERMAL IMPEDANCE (C/W) 0.25 0.10 0.15 0.10 0.05 0 D = 0.9 0.7 0.5 Note: PDM 0.3 t1 t2 0.1 0.05 10-5 10-4 SINGLE PULSE Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC t 0.1 1 10-2 10-3 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 10 052-6325 Rev C 6 - 2009 APT64GA90B_S 10% Gate Voltage td(on) TJ = 125C 90% tr V CC IC V CE APT30DQ100 Collector Current 5% Collector Voltage 5% 10% Switching Energy A D.U.T. Figure 20, Inductive Switching Test Circuit Figure 21, Turn-on Switching Waveforms and Definitions 90% td(off) TJ = 125C Gate Voltage Collector Voltage tf 10% 0 Collector Current Switching Energy Figure 22, Turn-off Switching Waveforms and Definitions TO-247 (B) Package Outline e3 100% Sn Plated (Heat Sink) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC D3PAK Package Outline 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) 13.41 (.528) 13.51(.532) Collector 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 1.04 (.041) 1.15(.045) Collector 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) Revised 4/18/95 13.79 (.543) 13.99(.551) Revised 8/29/97 11.51 (.453) 11.61 (.457) 0.46 (.018) 0.56 (.022) {3 Plcs} 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.} 6 - 2009 19.81 (.780) 20.32 (.800) 1.22 (.048) 1.32 (.052) 3.81 (.150) 4.06 (.160) (Base of Lead) Heat Sink (Collector) Gate Collector and Leads are Plated Emitter 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. 052-6325 Rev C Emitter Collector Dimensions in Millimeters and (Inches) Gate Dimensions in Millimeters (Inches) Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved. |
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